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    GAN ON SIC HEMT PULSED POWER TRANSISTOR PEAK Search Results

    GAN ON SIC HEMT PULSED POWER TRANSISTOR PEAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation

    GAN ON SIC HEMT PULSED POWER TRANSISTOR PEAK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 s Pulse, 10% Duty Rev. V2 Features •         GaN on SiC Depletion-Mode HEMT Transistor Common-Source Configuration Broadband Class AB Operation


    Original     		PDF MAGX-003135-120L00 EAR99 MAGX-003135-120L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration


    Original     		PDF MAGX-000912-250L00 MAGX-000912-250L00

    MAGX-001214-250L00

    Abstract: Gan on silicon transistor Gan transistor 1350 transistor Gan hemt transistor GaN TRANSISTOR 180 L-Band 1200-1400 MHz Hemt transistor
    Text: MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration


    Original     		PDF MAGX-001214-250L00 MAGX-001214-250L00 Gan on silicon transistor Gan transistor 1350 transistor Gan hemt transistor GaN TRANSISTOR 180 L-Band 1200-1400 MHz Hemt transistor

    Gan on silicon

    Abstract: 960-1215MHz jtids amplifier 250W MAGX-000
    Text: MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration


    Original     		PDF MAGX-000912-250L00 MAGX-000912-250L00 Gan on silicon 960-1215MHz jtids amplifier 250W MAGX-000

    MAGX-000912-125L00

    Abstract: transistor 1.25W MAGX000912125L00 sic wafer 100 mm MAGX-000
    Text: MAGX-000912-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration


    Original     		PDF MAGX-000912-125L00 MAGX-000912-125L00 transistor 1.25W MAGX000912125L00 sic wafer 100 mm MAGX-000

    Untitled

    Abstract: No abstract text available
    Text: MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 s Pulse, 2% Duty Features Rev. V3 MAGX-001090-600L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally Matched  Common-Source Configuration


    Original     		PDF MAGX-001090-600L00 MAGX-001090-600L0S MAGX-001090-600L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000912-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration


    Original     		PDF MAGX-000912-125L00 MAGX-000912-125L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration


    Original     		PDF MAGX-001214-250L00 MAGX-001214-250L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000912-500L00 MAGX-000912-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 s Pulse, 10% Duty Features Rev. V3 MAGX-000912-500L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally matched  Common-Source configuration


    Original     		PDF MAGX-000912-500L00 MAGX-000912-500L0S MAGX-000912-500L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-001214-650L00 GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 s Pulse, 10% Duty Features Rev. V1 MAGX-001214-650L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally Matched  Common-Source Configuration  Broadband Class AB Operation


    Original     		PDF MAGX-001214-650L00 MAGX-001214-650L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 s Pulse, 2% Duty Features Rev. V4 MAGX-001090-600L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally Matched  Common-Source Configuration


    Original     		PDF MAGX-001090-600L00 MAGX-001090-600L0S MAGX-001090-600L00

    L-Band 1200-1400 MHz

    Abstract: No abstract text available
    Text: MAGX-001214-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration


    Original     		PDF MAGX-001214-125L00 MAGX-001214-125L00 L-Band 1200-1400 MHz

    Untitled

    Abstract: No abstract text available
    Text: MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 s Pulse, 2% Duty Features Rev. V5 MAGX-001090-600L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally Matched  Common-Source Configuration


    Original     		PDF MAGX-001090-600L00 MAGX-001090-600L0S MAGX-001090-600L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000912-500L00 MAGX-000912-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 s Pulse, 10% Duty Features Rev. V5 MAGX-000912-500L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally matched  Common-Source configuration


    Original     		PDF MAGX-000912-500L00 MAGX-000912-500L0S MAGX-000912-500L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty Rev. V1 Features •       GaN on SiC Depletion-Mode Transistor Technology Internally Matched


    Original     		PDF MAGX-001214-500L00 MAGX-001214-500L0S MAGX-001214-500L00 GX1214-500LS

    Untitled

    Abstract: No abstract text available
    Text: MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 s Pulse, 10% Duty Features •       Rev. V2 MAGX-001214-500L00 GaN on SiC D-Mode Transistor Technology Internally Matched Common-Source Configuration


    Original     		PDF MAGX-001214-500L00 MAGX-001214-500L0S MAGX-001214-500L00 MAGX-002114-500L0S GX1214-500LS

    Untitled

    Abstract: No abstract text available
    Text: 1011GN-700ELM 700 Watts – 70% Efficiency Mode-S ELM, Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1011GN-700ELM is a common source, class AB, GaN on SiC HEMT power transistor specifically designed for Mode-S ELM Applications. It is capable of delivering 700 Watts of pulsed peak power


    Original     		PDF 1011GN-700ELM 55-KR 1011GN-700ELM

    thermal analysis and its application to high power gan hemt amplifiers

    Abstract: heat and mass transfer CuMoCu MMIC doherty 113C 157C 300C Designing with Field Effect Transistors
    Text: Thermal Analysis and its application to High Power GaN HEMT Amplifiers A. Prejs, S. Wood, R. Pengelly, W. Pribble Cree Inc., Durham, NC 27703 USA Abstract – A systematic and consistent approach to the thermal modeling and measurement of GaN on SiC HEMT power transistors is described. Since the power density of such


    Original     		PDF

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    combiner THEORY

    Abstract: amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318
    Text: AN RFMD WHITE PAPER RFMD. ® Wideband 400W Pulsed Power GaN HEMT Amplifiers Matthew J. Poulton, Karthik Krishnamurthy, Jay Martin, Bart Landberg, Rama Vetury, David Aichele RF Micro Devices, Inc. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, and PowerStar® are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective


    Original     		PDF WP100318 combiner THEORY amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318

    ofdm predistortion

    Abstract: CGH21120 transistors cross reference cgh40120F Digital Transistors Cross Reference CGH25120F RF power transistors cross reference GaN on SiC HEMT Pulsed Power Transistor Peak digital Pre-distortion Gan hemt transistor
    Text: May 2009 Short range wireless UWB GPS and satellite  GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride (GaN) HEMT based


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: August 25, 2014 MACOM Extends Industry Leading GaN Portfolio with New 15 W GaN on SiC Pulsed Power Transistor Unmatched Transistor Delivers 63% Drain Efficiency with 50 V Operation over DC-3.5 GHz LOWELL, Mass.- BUSINESS WIRE - M/A-COM Technology Solutions Inc. ("MACOM"), a leading supplier of high performance


    Original     		PDF MAGX-000035-015000 MAGX000035-01500S com/multimedia/home/20140825005018/en/

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4020036-FL T1G4020036-FL

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4020036-FS T1G4020036-FS