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    GAN PHEMT TRANSISTOR L BAND Search Results

    GAN PHEMT TRANSISTOR L BAND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GAN PHEMT TRANSISTOR L BAND Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    InP transistor HEMT

    Abstract: Class E amplifier GaN amplifier inp hemt power amplifier pHEMT transistor visitor Gan hemt transistor varian NONLINEAR MODEL LDMOS
    Text: 2130 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 42, NO. 10, OCTOBER 2007 A GaN HEMT Class F Amplifier at 2 GHz With 80% PAE David Schmelzer, Student Member, IEEE, and Stephen I. Long, Senior Member, IEEE Abstract—A Class F amplifier has been designed, fabricated, and


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    fpd2000as

    Abstract: FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise
    Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized


    Original     		PDF FPD2000AS FPD2000AS 33dBm 46dBm 85GHz) EB2000AS-AA 14GHz) EB2000AS-AD EB2000AS-AG FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise

    Ctr32

    Abstract: No abstract text available
    Text: RF5604 RF56045 V, 475MHz to 625MHz FEM 5V, 475MHZ TO 625MHZ FEM Package: 20-Pin, 4.5mmx4.5mmx0.975mm        Vdd 20 19 18 17 GND 2 15 C_PD GND 3 14 GND GND 4 13 5 12 GND 11 GND TX_IN Applications C_ATT 16 RX_OUT Integrated 50 Input/Output


    Original     		PDF RF56045 475MHz 625MHz RF5604 20-Pin, 975mm 39dBm RF5604 Ctr32

    Untitled

    Abstract: No abstract text available
    Text: RF5604 RF56045 V, 475MHz to 625MHz FEM 5V, 475MHZ TO 625MHZ FEM Package: 20-Pin, 4.5mmx4.5mmx0.975mm        Vdd 20 19 18 17 GND 2 15 C_PD GND 3 14 GND GND 4 13 5 12 GND 11 GND TX_IN Applications C_ATT 16 RX_OUT Integrated 50 Input/Output


    Original     		PDF RF5604 RF56045 475MHz 625MHz 20-Pin, 975mm 39dBm RF5604

    TGA2517

    Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
    Text: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4


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    Integrated Synthesizers with Mixers

    Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
    Text: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services


    Original     		PDF 11F-B, Integrated Synthesizers with Mixers Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers

    Untitled

    Abstract: No abstract text available
    Text: RF2363 DUAL-BAND 3V LOW NOISE AMPLIFIER NOT FOR NEW DESIGNS Package Style: SOT, 8-Lead „ „ „ „ „ „ Low Noise and High Intercept Point 18dB Gain at 900MHz 21dB Gain at 1900MHz Low Supply Current Single 2.5V to 5.0V Power Supply Very Small SOT-23-8 Plastic


    Original     		PDF RF2363 900MHz 1900MHz OT-23-8 RF2363 950MHz GSM/1850MHz DS080707

    Untitled

    Abstract: No abstract text available
    Text: RF2363 DUAL-BAND 3V LOW NOISE AMPLIFIER Package Style: SOT, 8-Lead Features „ „ „ „ „ „ Low Noise and High Intercept Point 18dB Gain at 900MHz 21dB Gain at 1900MHz Low Supply Current Single 2.5V to 5.0V Power Supply Very Small SOT-23-8 Plastic Package


    Original     		PDF RF2363 900MHz 1900MHz OT-23-8 RF2363 950MHz GSM/1850MHz DS040114

    Untitled

    Abstract: No abstract text available
    Text: RF2163 RF21633 V, 2.5GHz Linear Power Amplifier 3V, 2.5GHz LINEAR POWER AMPLIFIER 19dB Small Signal Gain  High Power Added Efficiency  Patent Pending Power Sense Technology  1800MHz to 2500MHz Frequency Range 2.5GHz ISM Band Applications  PCS Communication Systems


    Original     		PDF RF2163 RF21633 30dBm 1800MHz 2500MHz Log10 DS110615

    A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications

    Abstract: GaN amplifier Microwave Development Company dummy load volterra N6030 GaN amplifier 100W 4G base station power amplifier combiner THEORY Square D DPA 12 MAR-2 MMIC
    Text: This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1 A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications


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    433MHZ amplifier 1w

    Abstract: Schematic/RF2126
    Text: RF2126 RF2126High Power Linear Amplifier HIGH POWER LINEAR AMPLIFIER Features „ „ „ „ „ „ Single 3V to 6.0V Supply 1.3W Output Power 12dB Gain 45% Efficiency Power Down Mode 400MHz to 2700MHz Operation RF IN 1 8 RF OUT RF IN 2 7 RF OUT PC 3 VCC 4 5 RF OUT


    Original     		PDF RF2126 RF2126High 400MHz 2700MHz RF2126 2002/95/EC DS070123 433MHZ amplifier 1w Schematic/RF2126

    433MHZ amplifier 1w

    Abstract: Transistor A14 RF2126PCK RF2126 RF5187 RF Based Wireless Electronic Notice Board pc
    Text: RF2126 RF2126High Power Linear Amplifier HIGH POWER LINEAR AMPLIFIER Features „ „ „ „ „ „ Single 3V to 6.0V Supply 1.3W Output Power 12dB Gain 45% Efficiency Power Down Mode 400MHz to 2700MHz Operation RF IN 1 8 RF OUT RF IN 2 7 RF OUT PC 3 VCC 4 5 RF OUT


    Original     		PDF RF2126 RF2126High 400MHz 2700MHz RF2126 2002/95/EC DS070511 433MHZ amplifier 1w Transistor A14 RF2126PCK RF5187 RF Based Wireless Electronic Notice Board pc

    Untitled

    Abstract: No abstract text available
    Text: RF2126 RF2126High Power Linear Amplifier HIGH POWER LINEAR AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Slug This is a Legacy Product. For new designs, please contact RFMD to learn about our newer products. Features


    Original     		PDF RF2126 RF2126High 400MHz 2700MHz DS130517

    Untitled

    Abstract: No abstract text available
    Text: RF2162 This is a Legacy Product. For new designs, please contact RFMD to learn about our newer products. 3V 900MHz LINEAR AMPLIFIER Package Style: QFN, 16-Pin, 4x4  Single 3V Supply  29dBm Linear Output Power  29dB Linear Gain GND VCC1 VCC1 VCC BIAS


    Original     		PDF RF2162 900MHz 16-Pin, 800MHz 960MHz RF2162 DS121024

    Untitled

    Abstract: No abstract text available
    Text: RF2162 This is a Legacy Product. For new designs, please contact RFMD to learn about our newer products. 3V 900MHz LINEAR AMPLIFIER NOT FOR NEW DESIGNS Package Style: QFN, 16-Pin, 4x4 Single 3V Supply  29dBm Linear Output Power  29dB Linear Gain VCC1


    Original     		PDF RF2162 900MHz 16-Pin, 29dBm 800MHz 960MHz DS111219

    Untitled

    Abstract: No abstract text available
    Text: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features    RF IN 1 6 VC2 Input Match     IEEE802.11b/g/n WiFi Applications 2.5GHz ISM Band Applications Commercial and Consumer


    Original     		PDF RF5122 IEEE802 11b/g/n RF5122 2002/95/EC DS110617

    Untitled

    Abstract: No abstract text available
    Text: RF5122 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features „ „ „ RF IN 1 6 VC2 Input Match „ „ „ „ IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications


    Original     		PDF RF5122 IEEE802 11b/g/n RF5122 2002/95/EC DS070820

    Untitled

    Abstract: No abstract text available
    Text: RF5122 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2 mm x 2 mm x 0.6 mm 8 7 Features „ „ „ RF IN 1 6 VC2 Input Match „ „ „ „ IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications


    Original     		PDF RF5122 IEEE802 11b/g/n RF5122 2002/95/EC DS070221

    5GHz wifi power amplifier

    Abstract: No abstract text available
    Text: RF5322 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.4mm 8 7 Features    RF IN 1 6 VC2 Input Match     IEEE802.11b/g/n WiFi Applications 2.5GHz ISM Band Applications Commercial and Consumer


    Original     		PDF RF5322 IEEE802 11b/g/n RF5322 2002/95/EC DS110618 5GHz wifi power amplifier

    SFT-9100

    Abstract: InP transistor HEMT sft 43 Sft9100 SFT-9200B 9200B InP HEMT transistor at 50ghz inp hemt low noise amplifier InP HBT transistor mesfet low noise
    Text: SFT-9200B SFT-9200B 50GHz Transimpedance Amplifier 50GHZ TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9200B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE


    Original     		PDF SFT-9200B 50GHz SFT-9200B 43Gb/s 40GbE, 100GbE SFT-9100 InP transistor HEMT sft 43 Sft9100 9200B InP HEMT transistor at 50ghz inp hemt low noise amplifier InP HBT transistor mesfet low noise

    RF5122

    Abstract: metal detector circuit with pcb IPC-SM-782 QFN12 RF5122PCBA-41X P12 RF PIN SOT
    Text: RF5122 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features „ „ „ RF IN 1 6 VC2 Input Match „ „ „ „ IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications


    Original     		PDF RF5122 IEEE802 11b/g/n 2400MHz 2500MHz 18dBm 120mA RF5122 2002/95/EC DS070517 metal detector circuit with pcb IPC-SM-782 QFN12 RF5122PCBA-41X P12 RF PIN SOT

    RF5122

    Abstract: metal detector circuit with pcb IPC-SM-782 QFN12 QFN8 RF
    Text: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features    RF IN 1 6 VC2 Input Match     IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications Commercial and Consumer


    Original     		PDF RF5122 IEEE802 11b/g/n 2400MHz 2500MHz 18dBm 120mA 2002/95/EC DS100621 RF5122 metal detector circuit with pcb IPC-SM-782 QFN12 QFN8 RF

    RF5122

    Abstract: IPC-SM-782 QFN12 RF5122PCBA-41X RF Based Wireless Electronic Notice Board pc
    Text: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features „ „ „ RF IN 1 6 VC2 Input Match „ „ „ „ IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications Commercial and Consumer


    Original     		PDF RF5122 IEEE802 11b/g/n 2400MHz 2500MHz 18dBm 120mA RF5122 2002/95/EC DS090209 IPC-SM-782 QFN12 RF5122PCBA-41X RF Based Wireless Electronic Notice Board pc

    Untitled

    Abstract: No abstract text available
    Text: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features „ „ „ RF IN 1 6 VC2 Input Match „ „ „ „ IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications


    Original     		PDF RF5122 IEEE802 11b/g/n 2400MHz 2500MHz 18dBm 120mA RF5122 2002/95/EC DS080513