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    GAP PHOTODIODE PIN Search Results

    GAP PHOTODIODE PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    GAP PHOTODIODE PIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    silicon photodiode array

    Abstract: No abstract text available
    Text: PHOTONIC Silicon Photodiode Array, Near I.R. Photoconductive 8 element Type PDI-C208-F DETECTORS INC. PACKAGE DIMENSIONS INCH mm .600 [15.24] CL CL .062 [1.57] CL .100 [2.54] .014 [0.36] GAP (BETWEEN ACTIVE AREA) P.W.B 1 PHOTODIODE ARRAY CHIP (ACTIVE AREA)


    Original     		PDF PDI-C208-F 100-PDI-C208-F silicon photodiode array

    PDI-V208-F

    Abstract: photodiode array chip IR photodiode array
    Text: PHOTONIC DETECTORS INC. Silicon Photodiode Array, Near I.R. Photovoltaic 8 element Type PDI-V208-F PACKAGE DIMENSIONS INCH mm .600 [15.24] CL CL .062 [1.57] CL .100 [2.54] .014 [0.36] GAP (BETWEEN ACTIVE AREA) P.W.B 1 PHOTODIODE ARRAY CHIP (ACTIVE AREA)


    Original     		PDF PDI-V208-F 100-PDI-V208-F PDI-V208-F photodiode array chip IR photodiode array

    photodiode array chip

    Abstract: 9 ELEMENT photoDIODE ARRAY PDB-C208 silicon linear photodiode array c208 Photodiode Array linear Photodiode Array linear array photodiode element
    Text: PHOTONIC DETECTORS INC. Silicon Photodiode Array, Photoconductive 8 element Type PDB-C208 PACKAGE DIMENSIONS INCH mm .600 [15.24] CL C L .062 [1.57] CL .100 [2.54] .014 [0.36] GAP (BETWEEN ACTIVE AREA) P.W.B 1 PHOTODIODE ARRAY CHIP (ACTIVE AREA) 2 3 4 5


    Original     		PDF PDB-C208 100-PDB-C208 photodiode array chip 9 ELEMENT photoDIODE ARRAY PDB-C208 silicon linear photodiode array c208 Photodiode Array linear Photodiode Array linear array photodiode element

    silicon linear photodiode array

    Abstract: PDB-V208 Photonic Detectors
    Text: PHOTONIC DETECTORS INC. Silicon Photodiode Array, Photovoltaic 8 element Type PDB-V208 PACKAGE DIMENSIONS INCH mm .600 [15.24] CL C L .062 [1.57] CL .100 [2.54] .014 [0.36] GAP (BETWEEN ACTIVE AREA) P.W.B 1 PHOTODIODE ARRAY CHIP (ACTIVE AREA) 2 3 4 5 CL


    Original     		PDF PDB-V208 100-PDB-V208 silicon linear photodiode array PDB-V208 Photonic Detectors

    PDB-V208

    Abstract: linear array photodiode element
    Text: PHOTONIC DETECTORS INC. Silicon Photodiode Array, Photovoltaic 8 element Type PDB-V208 PACKAGE DIMENSIONS INCH mm .600 [15.24] CL C L .062 [1.57] CL .100 [2.54] .014 [0.36] GAP (BETWEEN ACTIVE AREA) P.W.B 1 PHOTODIODE ARRAY CHIP (ACTIVE AREA) 2 3 4 5 CL


    Original     		PDF PDB-V208 100-PDB-V208 PDB-V208 linear array photodiode element

    Untitled

    Abstract: No abstract text available
    Text: Photodiode-Chip EPC-440-2.5 19.11.2007 rev. 05 Wavelength range Type Technology Electrodes UV-blue-green Schottky Contact GaP P anode up typ. dimensions (µm) 2460 2400 2200 typ. thickness Description 300 µm High spectral sensitivity in the blue and ultraviolet


    Original     		PDF EPC-440-2 D-12555

    Untitled

    Abstract: No abstract text available
    Text: Photodiode-Chip EPC-440-1.4 19.11.2007 rev. 06 Wavelength range Type Technology Electrodes UV-blue-green Schottky Contact GaP P anode up typ. dimensions (µm) 1360 1300 1100 typ. thickness Description 300 µm High spectral sensitivity in the blue and ultraviolet


    Original     		PDF EPC-440-1 PD-04 D-12555

    DIL18

    Abstract: diode AA16 DIL-18 AD-LA-16-9-DIL 18 AA16-9DIL18 1100 RESISTOR ARRAY
    Text: AA16-9 DIL18 16 Element Avalanche Photodiode Array Special characteristics: quantum efficiency >80% at λ 760-910 nm high speed, low noise good uniformity between elements low cross talk AA16-9 DIL18 no. of Elements Active Area / Element [µm] Gap / Separation


    Original     		PDF AA16-9 DIL18 D-82008 CH-8247 DIL18 diode AA16 DIL-18 AD-LA-16-9-DIL 18 AA16-9DIL18 1100 RESISTOR ARRAY

    Untitled

    Abstract: No abstract text available
    Text: Photodiode-Chip EPC-440-0.9 19.11.2007 rev. 06 Wavelength range Type Technology Electrodes UV-blue-green Schottky Contact GaP P anode up typ. dimensions (µm) 860 800 720 typ. thickness Description 300 µm High spectral sensitivity in the blue and ultraviolet


    Original     		PDF EPC-440-0 PD-03 D-12555

    Untitled

    Abstract: No abstract text available
    Text: Photodiode-Chip EPC-440-3.6 19.11.2007 rev. 05 Wavelength range Type Technology Electrodes UV-blue-green Schottky Contact GaP P anode up 3560 typ. dimensions (µm) 3500 3300 typ. thickness Description 300 µm High spectral sensitivity in the blue and ultraviolet


    Original     		PDF EPC-440-3 PD-06 D-12555

    Photodiode-Array 32-element

    Abstract: Photodiode Array 32 element 16 Photodiode-Array PDB-C232 photodiode linear array
    Text: PHOTONIC DETECTORS INC. Silicon Photodiode Array, Photoconductive 32 Element Type PDB-C232 PACKAGE DIMENSIONS INCH [mm] CL CL .005 [0.13] GAP TYP +.005 [0.13] -.002 [0.05] 1.700 [43.18] .040 [1.02] 18 34 .700 [17.78] 1 ELEMENT NO. 1 2 3 4 5 6 7 8 9 10 11 12


    Original     		PDF PDB-C232 1x10-14 100-PDB-C232 Photodiode-Array 32-element Photodiode Array 32 element 16 Photodiode-Array PDB-C232 photodiode linear array

    Untitled

    Abstract: No abstract text available
    Text: EPD-525-0-2.5 rev 1.1 02.04.2015 Description EPD-525-0-2.5 is a selective photodiode based on GaP with an active area of 5.8 mm², mounted in hermetically sealed TO-39 package with isolated pins. The PD is specified with a sensitivity range of 410 – 580 nm, and a peak at 525 nm.


    Original     		PDF EPD-525-0-2

    silicon photodiode array

    Abstract: Photodiode Array 32 element blue enhanced photodiode array 16 Photodiode-Array PDB-V232
    Text: PHOTONIC DETECTORS INC. Silicon Photodiode Array, Photovoltaic 32 Element Type PDB-V232 PACKAGE DIMENSIONS INCH [mm] CL CL .005 [0.13] GAP TYP +.005 [0.13] -.002 [0.05] 1.700 [43.18] .040 [1.02] 18 34 .700 [17.78] 1 ELEMENT NO. 1 2 3 4 5 6 7 8 9 10 11 12 13


    Original     		PDF PDB-V232 1x10-14 100-PDB-V232 silicon photodiode array Photodiode Array 32 element blue enhanced photodiode array 16 Photodiode-Array PDB-V232

    Untitled

    Abstract: No abstract text available
    Text: Silicon Photodiode Array, Photoconductive 32 Element Type PDB-C232 PACKAGE DIMENSIONS INCH [mm] CL CL .005 [0.13] GAP TYP +.005 [0.13] -.002 [0.05] 1.700 [43.18] .040 [1.02] 18 34 .700 [17.78] 1 ELEMENT NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 0.050 [1.27]


    Original     		PDF PDB-C232 1x10-14 100-PDB-C232 pdb-c232

    Infrared detectors

    Abstract: dark detector application ,uses and working
    Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use


    Original     		PDF

    SLOTTED OPTICAL SWITCH

    Abstract: Infrared photodiode sensor PIN Photodiode car Speed Sensor IR photodiode tic 260 OPB621
    Text: Product Bulletin OPB621 November 2000 Slotted Optical Switch Type OPB621 Features Absolute Maximum Ratings TA = 25o C unless otherwise noted • PIN photodiode sensor for high speed • Non-contact switching • Printed circuit board mounting • 0.320”(8.13 mm) lead centers


    Original     		PDF OPB621 OPB621 SLOTTED OPTICAL SWITCH Infrared photodiode sensor PIN Photodiode car Speed Sensor IR photodiode tic 260

    OP999

    Abstract: IR photodiode sensor
    Text: Slotted Optical Switch OPB610, OPB611, OPB620, OPB621 Features: • • • • • • Non-contact switching Printed circuit board mounting Enhanced signal to noise ratio PIN photodiode sensor for high speed OPB611, OPB621 Lead centers: 0.275” (OPB61_ ) / 0.320” (OPB62_ )


    Original     		PDF OPB610, OPB611, OPB620, OPB621 OPB621) OPB61_ OPB62_ OP999 IR photodiode sensor

    OPB610

    Abstract: LED 020 ir sensor OPB620 SLOTTED OPTICAL SENSOR OP999 datasheet opb620 Infrared photodiode sensor OPTEK slotted SLOTTED OPTICAL SWITCH OP240
    Text: Slotted Optical Switch OPB610, OPB611, OPB620, OPB621 Features: • • • • • • Non-contact switching Printed circuit board mounting Enhanced signal to noise ratio PIN photodiode sensor for high speed OPB611, OPB621 Lead centers: 0.275” (OPB61_ ) / 0.320” (OPB62_ )


    Original     		PDF OPB610, OPB611, OPB620, OPB621 OPB621) OPB61_ OPB62_ OPB610 LED 020 ir sensor OPB620 SLOTTED OPTICAL SENSOR OP999 datasheet opb620 Infrared photodiode sensor OPTEK slotted SLOTTED OPTICAL SWITCH OP240

    Transmissive Optical Sensor 3 pin

    Abstract: OPB61 OPB610
    Text: Slotted Optical Switch OPB610, OPB611, OPB620, OPB621 Features: • • • • • • Non-contact switching Printed circuit board mounting Enhanced signal to noise ratio PIN photodiode sensor for high speed OPB611, OPB621 Lead centers: 0.275” (OPB61_ ) / 0.320” (OPB62_ )


    Original     		PDF OPB610, OPB611, OPB620, OPB621 OPB621) OPB61_ OPB62_ Transmissive Optical Sensor 3 pin OPB61 OPB610

    OPB610

    Abstract: SLOTTED OPTICAL SENSOR SLOTTED OPTICAL SWITCH OP999 OPB620 OPB611 datasheet opb620 OPTEK slotted photodiode and phototransistor OP240
    Text: Slotted Optical Switch OPB610, OPB611, OPB620, OPB621 Features: • • • • • • Non-contact switching Printed circuit board mounting Enhanced signal to noise ratio PIN photodiode sensor for high speed OPB611, OPB621 Lead centers: 0.275” (OPB61_ ) / 0.320” (OPB62_ )


    Original     		PDF OPB610, OPB611, OPB620, OPB621 OPB621) OPB61_ OPB62_ OPB610 SLOTTED OPTICAL SENSOR SLOTTED OPTICAL SWITCH OP999 OPB620 OPB611 datasheet opb620 OPTEK slotted photodiode and phototransistor OP240

    quadrant photodiode

    Abstract: photodiode array encoder photodiode encoder KMPD1054E01 S8594 SE-171 spot light size photodiode PIN photodiode chip GaP photodiode
    Text: PHOTODIODE Si PIN photodiode S8594 Quadrant photodiode with slit mask for encoder S8594 is a quadrant photodiode array with a slit mask code strip formed on the Si chip surface. Features Applications l Quadrant photodiode with slit mask of L/S (Line/Space)=10/10 µm


    Original     		PDF S8594 S8594 SE-171 KMPD1054E01 quadrant photodiode photodiode array encoder photodiode encoder KMPD1054E01 spot light size photodiode PIN photodiode chip GaP photodiode

    GaP photodiode

    Abstract: quadrant photodiode
    Text: PHOTODIODE Si PIN photodiode S8594 Quadrant photodiode with slit mask for encoder S8594 is a quadrant photodiode array with a slit mask code strip formed on the Si chip surface. Features Applications l Quadrant photodiode with slit mask of L/S (Line/Space)=10/10 µm


    Original     		PDF S8594 S8594 SE-171 KMPD1054E01 GaP photodiode quadrant photodiode

    all type transistor equivalent

    Abstract: pin details of photo transistor block diagram circuit diagram for photointerrupter IR block photodiode phototransistor HV photodiode chip silicon Infrared Phototransistor pn junction diode structure high sensitivity reflective photo interrupter ir led PHOTODIODE
    Text: Introduction Detecting devices Photodiode When light is incident on a silicon PN junction, the light generates electron and hole pairs in the silicon crystal. When the energy of the incident light is greater than the silicon energy band gap Eg , the electrons and holes scatter in accordance with the concentration gradient of the


    OCR Scan     		PDF

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12