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    GAP3SHT33-CAL SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GAP3SHT33-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GAP3SHT33-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * *


    Original     		PDF GAP3SHT33-CAL GAP3SHT33-CAL. 04-SEP-2013 GAP3SHT33 39E-14 01E-11 00E-10 00E-03 GAP3SHT33-CAL SPICE high-temperature-sic-bare-die

    Untitled

    Abstract: No abstract text available
    Text: GAP3SHT33-CAL Silicon Carbide Power Schottky Diode Chip VRRM VF IF QC = = = = 3300 V 1.7 V 0.3 A 52 nC Features •      3300 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF


    Original     		PDF GAP3SHT33-CALÂ TEMP-24) GAP3SHT33 39E-14 01E-11 00E-10 00E-03 00E-01

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet GAP3SHT33-CAL Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 3300 V 0.3 A 20 nC Features •     3300 V Schottky rectifier 250 °C maximum operating temperature Positive temperature coefficient of VF Fast switching speeds


    Original     		PDF GAP3SHT33-CAL GAP3SHT33 39E-14 01E-11 00E-10 00E-03 00E-01