GAP3SHT33-CAU SPICE
Abstract: high-temperature-sic-bare-die
Text: Die Datasheet GAP3SHT33-CAU SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GAP3SHT33-CAU. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * *
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GAP3SHT33-CAU
GAP3SHT33-CAU.
04-SEP-2013
GAP3SHT33
39E-14
01E-11
00E-10
00E-03
GAP3SHT33-CAU SPICE
high-temperature-sic-bare-die
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Untitled
Abstract: No abstract text available
Text: Die Datasheet GAP3SHT33-CAU Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 3300 V 0.3 A 20 nC Features • 3300 V Schottky rectifier 250 °C maximum operating temperature Positive temperature coefficient of VF Fast switching speeds
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Original
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PDF
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GAP3SHT33-CAU
GAP3SHT33
39E-14
01E-11
00E-10
00E-03
00E-01
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Untitled
Abstract: No abstract text available
Text: GAP3SHT33-CAU Silicon Carbide Power Schottky Diode Chip VRRM VF IF QC = = = = 3300 V 1.7 V 0.3 A 52 nC Features • 3300 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF
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Original
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PDF
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GAP3SHT33-CAU
TEMP-24)
GAP3SHT33
39E-14
01E-11
00E-10
00E-03
00E-01
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