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    BCR5PM-12LG-AS#B00 Renesas Electronics Corporation Triacs Visit Renesas Electronics Corporation
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    GASB Price and Stock

    Temprecord International 95GASBA

    G4 SCIENTIFIC MULTIUSE TEMPERATU
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    DigiKey 95GASBA Ammo Pack 1
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    Temprecord International 95GASBY1PS

    G4 SCIENTIFIC STRAIGHT PROBE 1 M
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    Phyton Inc CPI2-GASB-7-20

    SIGNAL SPLITTER BOARD 1-TO-7X 20
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    Phyton Inc CPI2-GASB-14-20

    SIGNAL SPLITTER BOARD 1-TO-14X 2
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    Renesas Electronics Corporation BCR5PM-14LG-AS#B00

    Triac, 700 V, 5 A, TO-220F, 1.5 V, 3 Pins - Bulk (Alt: BCR5PM-14LG-AS#B00)
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    Rochester Electronics BCR5PM-14LG-AS#B00 26,118 1
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    Chip1Stop BCR5PM-14LG-AS#B00 Tray 1
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    GASB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LED21-TEC-PR

    Abstract: No abstract text available
    Text: LED21-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics.


    Original     		PDF LED21-TEC-PR LED21-TEC-PR 300x300 150-200mA

    LED23FC-TEC-PR

    Abstract: No abstract text available
    Text: LED23FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED23FC-TEC-PR LED23FC-TEC-PR 670x770 150-200mA

    LED22

    Abstract: No abstract text available
    Text: LED22 TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED22 has a stable ouput power and a lifetime more then 80000 hours.


    Original     		PDF LED22 LED22 300x300 150-200mA

    LED23FC

    Abstract: No abstract text available
    Text: LED23FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED23FC LED23FC 670x770 150-200mA

    LED19-PR

    Abstract: No abstract text available
    Text: LED19-PR v 2.0 24.11.2014 Description LED19-PR series are fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate. This Mid-IR LED provides a typical peak wavelength of 1.95 µm and optical power of typ. 1 mW qCW. It comes in TO-18 package, with a parabolic reflector and a without window on request .


    Original     		PDF LED19-PR LED19-PR 150mA 200mA

    LED19FC-TEC

    Abstract: No abstract text available
    Text: LED19FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED19FC-TEC LED19FC-TEC 670x770 150-200mA

    LED18FC-TEC

    Abstract: No abstract text available
    Text: LED18FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.85 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED18FC-TEC LED18FC-TEC 670x770 150-200mA

    LED22-TEC

    Abstract: No abstract text available
    Text: LED22-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED22-TEC has a stable ouput power and a lifetime more then 80000 hours.


    Original     		PDF LED22-TEC LED22-TEC 300x300 150-200mA

    LED20-TEC-PR

    Abstract: No abstract text available
    Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 2.05 µm Model LED20-TEC-PR 1.1 mW •Light Emitting Diodes LED20-TEC-PR are designed for emitting at a spectral range around 2050 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates


    Original     		PDF LED20-TEC-PR LED20-TEC-PR LED20 LED20 LED20-PR

    LED20FC-TEC

    Abstract: No abstract text available
    Text: LED20FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED20FC-TEC LED20FC-TEC 670x770 150-200mA

    LED20FC-SMD5

    Abstract: No abstract text available
    Text: LED20FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid


    Original     		PDF LED20FC-SMD5 LED20FC-SMD5 670x770 150-200mA

    Untitled

    Abstract: No abstract text available
    Text: LED16FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.65 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED16FC-PR LED16FC-PR 670x770 150-200mA

    LED19FC-PR

    Abstract: No abstract text available
    Text: LED19FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED19FC-PR LED19FC-PR 670x770 150-200mA

    LED18FC-TEC-PR

    Abstract: No abstract text available
    Text: LED18FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.85 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED18FC-TEC-PR LED18FC-TEC-PR 670x770 150-200mA

    LED22FC-PR-WIN

    Abstract: No abstract text available
    Text: LED22FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.23 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED22FC-PR-WIN LED22FC-PR-WIN 670x770 150-200mA

    Untitled

    Abstract: No abstract text available
    Text: LED17FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.75 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED17FC-TEC LED17FC-TEC 670x770 150-200mA

    Untitled

    Abstract: No abstract text available
    Text: LED23-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.


    Original     		PDF LED23-SMD3 LED23-SMD3 300x300 150-200mA

    LED21FC-TEC-PR

    Abstract: No abstract text available
    Text: LED21FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED21FC-TEC-PR LED21FC-TEC-PR 670x770 150-200mA

    LED19-TEC

    Abstract: No abstract text available
    Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 1.95 µm Model LED19-TEC 1.0 mW •Light Emitting Diodes LED19-TEC are designed for emitting at a spectral range around 1950 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates


    Original     		PDF LED19-TEC LED19-TEC LED19 LED19 LED19-PR

    LED20FC

    Abstract: No abstract text available
    Text: LED20FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED20FC LED20FC 670x770 150-200mA

    LED23-TEC-PR

    Abstract: No abstract text available
    Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 2.35 µm Model LED23-TEC-PR 0.8 mW •Light Emitting Diodes LED23-TEC-PR are designed for emitting at a spectral range around 2350 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates


    Original     		PDF LED23-TEC-PR LED23-TEC-PR LED23 LED23 LED23-PR

    LED19-SMD5

    Abstract: No abstract text available
    Text: LED19-SMD5 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.


    Original     		PDF LED19-SMD5 LED19-SMD5 300x300 150-200mA

    Untitled

    Abstract: No abstract text available
    Text: LED17FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.75 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED17FC LED17FC 670x770 150-200mA

    LED18-TEC

    Abstract: No abstract text available
    Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 1.85 µm Model LED18-TEC 0.9 mW •Light Emitting Diodes LED18-TEC are designed for emitting at a spectral range around 1850 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates


    Original     		PDF LED18-TEC LED18-TEC LED18 LED18 LED18-PR