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    GATE LOGICAL AND Search Results

    GATE LOGICAL AND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    54H11DM Rochester Electronics LLC AND Visit Rochester Electronics LLC Buy
    MC503FB2 Rochester Electronics LLC MC503 - AND-OR-INVERT Gate Visit Rochester Electronics LLC Buy
    74H08PC Rochester Electronics LLC 74H08 - AND Gate, TTL, PDIP14 Visit Rochester Electronics LLC Buy
    MC54H08L Rochester Electronics LLC 54H08 - TTL AND Gate Visit Rochester Electronics LLC Buy

    GATE LOGICAL AND Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MM74C30N

    Abstract: MM54C30J MM74C30 MM54C30 MM74C30J AN-90 C1995 J14A
    Text: MM54C30 MM74C30 8-Input NAND Gate General Description Features The logical gate employs complementary MOS CMOS to achieve wide power supply operating range low power consumption and high noise immunity Function and pin out compatibility with series 54 74 devices minimizes design


    Original     		PDF MM54C30 MM74C30 MM74C30N MM54C30J MM74C30J AN-90 C1995 J14A

    XC6200

    Abstract: XC009 PN16 XC6209 XC6216 XC6264 C031 vhdl code up down counter
    Text:  XC6200 Field Programmable Gate Arrays Table Of Contents Features Description Architecture Logical and Physical Organization Additional Routing Resources Magic Wires Global Wires Function Unit Cell Logic Functions Routing Switches Clock Distribution Clear Distribution


    Original     		PDF XC6200 XC6200 XC6216 -2PC84C -40oC 100oC -55oC 125oC 84-Pin HT144 XC009 PN16 XC6209 XC6264 C031 vhdl code up down counter

    XC6200

    Abstract: p61 s43 XC6264 w1p77 w56 transistor BUF C038 N48 pqfp Package Typ P194 B1 121 W97 diode ak38
    Text:  XC6200 Field Programmable Gate Arrays Table Of Contents Features Description Architecture Logical and Physical Organization Additional Routing Resources Magic Wires Global Wires Function Unit Cell Logic Functions Routing Switches Clock Distribution Clear Distribution


    Original     		PDF XC6200 XC6200 XC6216 -2PC84C 84-Pin HT144 144-Pin BG225 225-Pin HQ240 p61 s43 XC6264 w1p77 w56 transistor BUF C038 N48 pqfp Package Typ P194 B1 121 W97 diode ak38

    MM54C30J

    Abstract: No abstract text available
    Text: MICROCIRCUIT DATA SHEET Original Creation Date: 10/19/95 Last Update Date: 05/19/97 Last Major Revision Date: 04/02/97 MNMM54C30-X REV 1A0 8-INPUT NAND GATE General Description The logical gate employs complementary MOS CMOS to achieve wide power supply operating


    Original     		PDF MNMM54C30-X MM54C30 MM54C30J/883 MM54C30W/883 MIL-STD-883, MM54C30J

    C1995

    Abstract: DM74ALS DM74ALS09 DM74ALS09M DM74ALS09N M14A N14A
    Text: DM74ALS09 Quad 2-Input AND Gate with Open Collector Outputs General Description Features This device contains four independent gates each of which performs the logic AND function The open-collector outputs require external pull-up resistors for proper logical operation


    Original     		PDF DM74ALS09 C1995 DM74ALS DM74ALS09M DM74ALS09N M14A N14A

    DM74ALS09

    Abstract: DM74ALS09M DM74ALS09N M14A MS-001 N14A
    Text: Revised February 2000 DM74ALS09 Quad 2-Input AND Gate with Open Collector Outputs General Description Features This device contains four independent gates, each of which performs the logic AND function. The open-collector outputs require external pull-up resistors for proper logical


    Original     		PDF DM74ALS09 DM74ALS09 DM74ALS09M DM74ALS09N M14A MS-001 N14A

    C1995

    Abstract: DM74ALS DM74ALS03B DM74ALS03BM DM74ALS03BN M14A N14A
    Text: DM74ALS03B Quad 2-Input NAND Gate with Open Collector Outputs General Description Features This device contains four independent gates each of which performs the logic NAND function The open-collector outputs require external pull-up resistors for proper logical operation


    Original     		PDF DM74ALS03B C1995 DM74ALS DM74ALS03BM DM74ALS03BN M14A N14A

    DM74ALS03B

    Abstract: DM74ALS03BM DM74ALS03BN M14A MS-001 N14A
    Text: Revised February 2000 DM74ALS03B Quad 2-Input NAND Gate with Open Collector Outputs General Description Features This device contains four independent gates, each of which performs the logic NAND function. The open-collector outputs require external pull-up resistors for proper logical


    Original     		PDF DM74ALS03B DM74ALS03B DM74ALS03BM DM74ALS03BN M14A MS-001 N14A

    TC534200F

    Abstract: UTC A11 TC534200P
    Text: TOSHIBA TC534200P/F SILICON STACKED GATE CMOS 262,144 WORD x 16 BIT/524,288 WORD x 8 BIT CMOS MASK ROM Description The TC534200P/F is a 4,194,304 bit read only memory organized as 262,144 words by 16 bits when BYTE is logical high and organized as 524,288 words by 8 bits when BY I t is logical low.


    OCR Scan     		PDF TC534200P/F BIT/524 TC534200P/F 600mil 40-pin 525mil TC534200P TC534200F UTC A11

    74c SERIES cmos logic data

    Abstract: mm54c30 MM74C30 AN-90 cmos 74C
    Text: MM54C30/MM74C30 Wm National Semiconductor MM54C30/MM74C30 8-Input NAND Gate General Description Features The logical gate employs complementary MOS CMOS to achieve wide power supply operating range, low power con­ sumption and high noise immunity. Function and pin out


    OCR Scan     		PDF MM54C30/MM74C30 54C/74C AN-90. TL/F/5880-3 TL/F/5880-4 74c SERIES cmos logic data mm54c30 MM74C30 AN-90 cmos 74C

    TC5316200bP

    Abstract: TC5316200BP/BF
    Text: TOSHIBA TC5316200BP/BF SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM D escription The TC5316200BP/BF is a 16,777,216 bit read only memory organized as 1,048,576 words by 16 bits when BY I t is logical high, and organized as 2,097,152 words by 8 bits when BYTE is logical low.


    OCR Scan     		PDF TC5316200BP/BF TC5316200BP/BF 600mil 42-pin 44-pin TC5316200BP TC5316200BF

    TC5316210

    Abstract: Tc5316210cf
    Text: TC5316210CP/CF TOSHIBA TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 1 M WORD BY 16 BITS/2 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC5316210CP/CF is a 16,777,216-bit Read Only Memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and as 2,097,152 words by 8 bits when BYTE is logical low.


    OCR Scan     		PDF TC5316210CP/CF TC5316210CP/CF 216-bit 42-pin 44-pin 765TYP TC5316210 Tc5316210cf

    Untitled

    Abstract: No abstract text available
    Text: TC5332410BF/BFT TOSHIBA TOSHIBA MOS INTEGRATED CIRCUIT 32 MBIT 1 M WORD BY 32 BITS/2 SILICON GATE CMOS WORD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.


    OCR Scan     		PDF TC5332410BF/BFT TC5332410BF/BFT 432-bit 70-pin

    TC534200CF

    Abstract: No abstract text available
    Text: TOSHIBA TC534200CP/CF/CFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 4 MBIT 256 K WORD BY 16 BITS/512 K WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC534200CP/CF is a 4,194,304-bit Read Only Memory organized as 262,144 words by 16 bits when BYTE is logical high, and as 524,288 words by 8 bits when BYTE is logical low.


    OCR Scan     		PDF TC534200CP/CF/CFT BITS/512 TC534200CP/TC534200CF 304-bit TC534200CP/CF 40-pin 44-pin TC534200CF

    A10AL

    Abstract: TC538200AFT
    Text: TO SH IB A TC538200AP/AF/AFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 8 MBIT 512 K WORD BY 16 BITS/1 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits when BYTE is logical high, and as 1,048,576 words by 8 bits when BYTE is logical low.


    OCR Scan     		PDF TC538200AP/AF/AFT TC538200AP/AF 608-bit 42-pin 44-pin OP44-- A10AL TC538200AFT

    TC5316200CP

    Abstract: TC5316200CF
    Text: T O S H IB A TC5316200CP/CF/CFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 1 M WORD BY 16 BITS/2 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC5316200CP/CF/CFT is a 16,777,216-bit Read Only Memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and as 2,097,152 words by 8 bits when BYTE is logical low.


    OCR Scan     		PDF TC5316200CP/CF/CFT TC5316200CP/CF/CFT 216-bit 42-pin 44-pin TC5316200CP TC5316200CF

    Integrated CMOS Systems

    Abstract: 4 bit ALU USING VLSI ICS10000 ICS10045 ICS10080 ICS10130 ICS10220G ICSI0250 gpR circuit design
    Text: H H Integrated S b S CMOS • ■ Systems ICS10000 Series Gate Arrays Features • Silicon gate 1.5 um drawn advanced CMOS technology with 2 levels of interconnection • High speed: 0.52 ns for a 2 input NAND with fanout=2 logical loads at 25 °C and Vdd=5V


    OCR Scan     		PDF ICS10000 Integrated CMOS Systems 4 bit ALU USING VLSI ICS10045 ICS10080 ICS10130 ICS10220G ICSI0250 gpR circuit design

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC5332410BF/BFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 1 M W O RD BY 32 BITS/2 M W O RD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.


    OCR Scan     		PDF TC5332410BF/BFT TC5332410BF/BFT 432-bit 70-pin

    TC5316200CP

    Abstract: tc5316200
    Text: TOSHIBA TC5316200CP/CF/CFT PRELIMINARY SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM Description The TC5316200CP/CF/CFT is a 16,777,216 bit read only memory organized as 1,048,576 w ords by 16 bits when BY I t is logical high, or as 2,097,152 w ords by 8 bits when BYTE is logical low.


    OCR Scan     		PDF TC5316200CP/CF/CFT TC5316200CP/CF/CFT 600mil 42-pin 44-pin 400mil TC5316200CP tc5316200

    Untitled

    Abstract: No abstract text available
    Text: C J MTTL I MC500/400 series "OR" e x p a n d a b le \ DUAL «-INPUT "AND" GATE I MC527 • MC577 MC427 • MC477 This device consists of two 4-input logical AND gates. Each gate has a single point connected externally which enables a single wire OR expansion using the


    OCR Scan     		PDF MC500/400 MC527 MC577 MC427 MC477 MC528

    Untitled

    Abstract: No abstract text available
    Text: December 1989 DM74ALS09 Quad 2-Input AND Gate with Open Collector Outputs General Description Features This device contains four independent gates, each of which performs the logic AND function. The open-collector out­ puts require external pull-up resistors for proper logical op­


    OCR Scan     		PDF DM74ALS09

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor DM74ALS09 Quad 2-Input AND Gate with Open Collector Outputs General Description Features This device contains four independent gates, each of which performs the logic AND function. The open-collector out­ puts require external pull-up resistors for proper logical op­


    OCR Scan     		PDF DM74ALS09

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor DM74ALS09 Quad 2-Input AND Gate with Open Collector Outputs General Description Features This device contains four independent gates, each of which performs the logic AND function. The open-collector out­ puts require external pull-up resistors for proper logical op­


    OCR Scan     		PDF DM74ALS09

    Untitled

    Abstract: No abstract text available
    Text: AVG Semiconductors DDi Technical Data Triple 3-Input NAND Gate with Open Collector Ouputs N Suffix Plastic DIP AVG-001 Case This device contains three independent gates, each of which performs the logic AND function. The open-collector outputs require external pull-up resistors for proper logical operation.


    OCR Scan     		PDF AVG-001 DV74LS15 DV74ALS15A AVG-002 ALS15A DV74LS15,