graphite foil
Abstract: GC CEMENT GT-11 silicon carbide pumice
Text: GC-Ceramic Cement Vishay Micro-Measurements Installation of Strain Gages Using GC-Ceramic Cement INTRODUCTION tape must be applied on the curved surface so that the spatula will be drawn along the flat axis. GC-Cement is a single-component cement good for
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Original
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2000F
1093C]
21-Feb-03
graphite foil
GC CEMENT
GT-11
silicon carbide
pumice
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PDF
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GC2035
Abstract: Cutler-Hammer HFD J250H GC2015 BS 4752 E125H j250e cutler hammer ghb CUTLER HAMMER E125S Cutler-Hammer* E125B
Text: Cutler-Hammer Molded Case Circuit Breakers 15-100 Amperes January 2001 12-11 Vol. 1, Ref. No. [0477] G-Frame Types GC, GHC and HGHC Circuit Breakers Product Selection Table 12-14. Type GC Thermal-Magnetic Circuit Breakers with Non-interchangeable Trip Units
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Original
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125/250V
GC1015®
GC1020
GC1025
GC1030
GC1035
GC1040
GC1045
GC1050
GC2035
Cutler-Hammer HFD
J250H
GC2015
BS 4752
E125H
j250e
cutler hammer ghb
CUTLER HAMMER E125S
Cutler-Hammer* E125B
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PDF
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GC smd diode
Abstract: No abstract text available
Text: PLCC6 SMD Top View Package LED SMP6-GC, GREEN SMP6-GC ♦ ♦ ♦ ♦ ♦ Industry Standard PLCC6 Footprint Low Profile Package High Luminous Intensity Wide Viewing Angle High Power Efficiency Bivar SMP6 LED is offered in an industry standard PLCC6 package with high luminous intensity and wide
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PDF
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Untitled
Abstract: No abstract text available
Text: PLCC6 SMD Top View Package LED SMP6-GC, GREEN SMP6-GC ♦ ♦ ♦ ♦ ♦ Industry Standard PLCC6 Footprint Low Profile Package High Luminous Intensity Wide Viewing Angle High Power Efficiency Bivar SMP6 LED is offered in an industry standard PLCC6 package with high luminous intensity and wide
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: 0ATE SYH AUTHORITY DR R E V IS IO N RECORO 16N090 A RELEASED 25JA91 B REVISED MATERIAL SPEC 10JA92 B1 REVISED DIMENSION - 1 PLACE 22MY92 C ADDED .335, .0401.010-2 PLCS, .0551.0102 PLCS, .Q.15R-4 PLCS & .022+.000/-.006 DO NOT S C A LE CK 900005 SC SC 139761 GC GC
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OCR Scan
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16N090
25JA91
10JA92
22MY92
15R-4
1BN090
0362SO.
16N030
21N090
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PDF
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fdc9266
Abstract: FDC92
Text: FDC9266 STANDARD MICROSYSTEMS CORPORATION, Single/Double Density Enhanced Floppy Disk Controller PIN CONFIGURATION FEATURES GC o fe b GC £ 3 « - 'O u . Q. L Z Q 9 ti 3 3 D n n n n n n n n n 39 38 37 36 35 34 33 32 31 30 29 HDL FR/STP WE P0_ DSKD CLK
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: AFE840x System Evaluation Kit and GC Studio Reference User's Guide Literature Number: SLWU034A May 2006 – Revised November 2008 2 SLWU034A – May 2006 – Revised November 2008 Submit Documentation Feedback Contents . 5
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Original
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AFE840x
SLWU034A
TSW2100
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PDF
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vistanet
Abstract: dell modicon modicon plc ph meter circuit abb PE1750 R200 dell server
Text: Software VistaNET Gateway VistaNET GC Background Screen Service: Dell Hardware Warranty Plus on-Site Service initial Year 988-1397 Service: Basic Enterprise Support: Business Hours (5x10) Next Business Day On-Site Service after Problem Diagnosis Initial Y (9839050)
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Original
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33GHz,
1333MHZ
667MHz,
BUASC630
vistanet
dell
modicon
modicon plc
ph meter circuit abb
PE1750
R200
dell server
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PDF
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K3N6C1000C-GC10
Abstract: No abstract text available
Text: K3N6C1000C-GC CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption
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Original
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K3N6C1000C-GC
32M-Bit
/2Mx16)
304x8
152x16
100ns
44-SOP-600
K3N6C1000C-GC
K3N6C1000C-GC10
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PDF
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gDDR2-800
Abstract: No abstract text available
Text: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM Revision 1.8 May 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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Original
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K4N56163QF-GC
256Mbit
gDDR2-800
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PDF
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GC1115
Abstract: No abstract text available
Text: GC Studio SLWU025 – February 2006 User’s Manual IMPORTANT NOTICE THE PRODUCTS ORDERED HEREUNDER ARE EXPERIMENTAL, DEVELOPMENTAL OR PROTOTYPE PRODUCTS. THE PRODUCT SPECIFICATIONS ARE PRELIMINARY & SUBJECT TO CHANGE WITHOUT NOTICE. TI MAKES NO WARRANTY, EITHER EXPRESSED, IMPLIED OR
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Original
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SLWU025
GC1115
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PDF
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intercast
Abstract: intercast 1995 YUV12
Text: Graphics Controller ‘97 GC’97 Rev. 1.0 THIS SPECIFICATION IS PROVIDED "AS IS" WITH NO WARRANTIES WHATSOEVER, INCLUDING ANY WARRANTY OF MERCHANTABILITY, FITNESS FOR ANY PARTICULAR PURPOSE, OR ANY WARRANTY OTHERWISE ARISING OUT OF ANY PROPOSAL, SPECIFICATION OR SAMPLE.
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Original
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100MB/s
320x240
YUV12
intercast
intercast 1995
YUV12
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Information CMOS MASK ROM K3P7C1000B-GC 64M-Bit 8Mx8 /4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access
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Original
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K3P7C1000B-GC
64M-Bit
/4Mx16)
100ns
150mA
44-SOP-600
K3P7C1000B-GC
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PDF
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K3N7C1000B-GC
Abstract: No abstract text available
Text: Preliminary Information CMOS MASK ROM K3N7C1000B-GC 64M-Bit 8Mx8 /4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V
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Original
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K3N7C1000B-GC
64M-Bit
/4Mx16)
100ns
44-SOP-600
K3N7C1000B-GC
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PDF
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|
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K4N56163QF-GC37
Abstract: K4N56163QF-ZC gddr5 JESD51-2 K4N56163QF-GC K4N56163QF-GC25 K4N56163QF-GC30
Text: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM Revision 1.6 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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Original
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K4N56163QF-GC
256Mbit
K4N56163QF-GC37
K4N56163QF-ZC
gddr5
JESD51-2
K4N56163QF-GC
K4N56163QF-GC25
K4N56163QF-GC30
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PDF
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RJ14C
Abstract: krone telephone connector RJ12C RJ19 RJ11W BU 3140 RJ13C krone cat5 wall RJ11C RJ-11C
Text: GC/Waldom Telephone Accessories and Computer Accessories Telephone Accessories Mid-Size Flush Wall Jack Ñ Fig. A. Mid-size flush wall jack assembly allows connection of plug ended modular line cords. Ideal for installation where opening is bigger than normal.
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Original
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RJ11C,
RJ12C,
RJ13C,
RJ14C,
30-9726-BU.
30-9786-BU.
30-9729-BU.
45-5765-BU.
45-5766-BU.
45-5711-BU.
RJ14C
krone telephone connector
RJ12C
RJ19
RJ11W
BU 3140
RJ13C
krone cat5 wall
RJ11C
RJ-11C
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PDF
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Untitled
Abstract: No abstract text available
Text: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM Revision 2.0 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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Original
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K4N56163QF-GC
256Mbit
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PDF
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MASK ROM 32M PROGRAM 5V
Abstract: K3P6C1000B-GC
Text: K3P6C1000B-GC CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 8 words/ 16 bytes page access
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Original
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K3P6C1000B-GC
32M-Bit
/2Mx16)
304x8
152x16
100ns
150mA
44-SOP-600
K3P6C1000B-GC
MASK ROM 32M PROGRAM 5V
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PDF
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K3N6C1000E-GC
Abstract: No abstract text available
Text: K3N6C1000E-GC CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time 100ns(Max.) : C L=50pF 120ns(Max.) : C L=100pF • Supply voltage : single +5V
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Original
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K3N6C1000E-GC
32M-Bit
/2Mx16)
304x8
152x16
100ns
120ns
100pF
44-SOP-600
K3N6C1000E-GC
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PDF
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Untitled
Abstract: No abstract text available
Text: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM 4M x 16Bit x 4 Banks gDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.5 March 2005 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.5 Mar. 2005
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K4N56163QF-GC
256Mbit
16Bit
K4N56163QF-GC20/22
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PDF
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SOP-36
Abstract: SOP36
Text: K3N7C1000M-GC CMOS MASK ROM 64M-Bit 8Mx8 /4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time : 120ns(Max.) • Supply voltage : single +5V • Current consumption
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Original
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K3N7C1000M-GC
64M-Bit
/4Mx16)
120ns
44-SOP-600
K3N7C1000M-GC
SOP-36
SOP36
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PDF
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Untitled
Abstract: No abstract text available
Text: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM 4M x 16Bit x 4 Banks gDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.3 January 2005 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.3 Jan. 2005
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Original
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K4N56163QF-GC
256Mbit
16Bit
K4N56163QF-GC20/22
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PDF
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GC-IP1000
Abstract: GC-IP1000B IP1000B TLC1417 IP1000 IP501 AD7475 MAX803 TQFP64 AD747
Text: GC-IP1000B Data Sheet Version: 2.2 Date: 10.12.2007 GEMAC mbH • Zwickauer Straße 227 · 09116 Chemnitz · Germany Telephone: +49 371 3377 – 0 · Telefax: +49 371 3377 – 272 eMail: info@gemac-chemnitz.de · Web: www.gemac-chemnitz.de Revision History
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Original
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GC-IP1000B
GC-IP1000B
well00
43000-DB-2-2-E-IP1000B
GC-IP1000
IP1000B
TLC1417
IP1000
IP501
AD7475
MAX803
TQFP64
AD747
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PDF
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1000B-GC
Abstract: No abstract text available
Text: Preliminary Information CMOS MASK ROM K3P7V U 1000B-GC 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time Random Access Time/Page Access Time
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Original
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1000B-GC
64M-Bit
/4Mx16)
100/30ns
120/40ns
44-SOP-600
1000B-GC
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PDF
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