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    GE 84A Search Results

    GE 84A Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3899(0)-ZK-E1-AY Renesas Electronics Corporation Nch Single Power Mosfet 60V 84A 5.3Mohm Mp-25Zk/To-263 Visit Renesas Electronics Corporation
    2SK3899-ZK-E1-AY Renesas Electronics Corporation Nch Single Power Mosfet 60V 84A 5.3Mohm Mp-25Zk/To-263 Visit Renesas Electronics Corporation
    2SK3899-ZK-E1-AZ Renesas Electronics Corporation Nch Single Power Mosfet 60V 84A 5.3Mohm Mp-25Zk/To-263 Visit Renesas Electronics Corporation
    2SK3899(0)-ZK-E1-AZ Renesas Electronics Corporation Nch Single Power Mosfet 60V 84A 5.3Mohm Mp-25Zk/To-263 Visit Renesas Electronics Corporation
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    GE 84A Price and Stock

    Toshiba America Electronic Components TBD62084AFWG,EL

    Gate Drivers DMOS Transistor Array 8-CH, 50V/0.5A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TBD62084AFWG,EL 27,166
    • 1 $1.17
    • 10 $0.963
    • 100 $0.653
    • 1000 $0.502
    • 10000 $0.437
    		Buy Now

    Toshiba America Electronic Components TBD62084AFNG,EL

    Gate Drivers DMOS Transistor Array 8-CH, 50V/0.5A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TBD62084AFNG,EL 9,804
    • 1 $1.38
    • 10 $1.09
    • 100 $0.744
    • 1000 $0.616
    • 10000 $0.516
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    Toshiba America Electronic Components TBD62384AFWG,EL

    Gate Drivers DMOS Transistor Array 8-CH 50V 0.5A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TBD62384AFWG,EL 3,225
    • 1 $1.9
    • 10 $1.26
    • 100 $0.868
    • 1000 $0.689
    • 10000 $0.593
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    Analog Devices Inc HMC284AMS8GE

    RF Switch ICs SPDT, Hi Isolation Switch , DC - 3.5 GHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HMC284AMS8GE 1,775
    • 1 $4.76
    • 10 $4.27
    • 100 $3.5
    • 1000 $2.98
    • 10000 $2.98
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    Analog Devices Inc HMC784AMS8GE

    RF Switch ICs Switches
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HMC784AMS8GE 1,036
    • 1 $14.74
    • 10 $11.49
    • 100 $9.33
    • 1000 $7.97
    • 10000 $7.97
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    Find more GE 84A price and stock on Findchips.com

    GE 84A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    bl p76 transistor

    Abstract: bl p76 led clock circuit diagram led using clock circuit diagram with TRANSISTOR BH 4216 ic rom 2816 TD 6316 transistor bl p75 M37735MHBXXXFP
    Text: MITSUBISHI MICROCOMPUTERS RY A N IMI M37735MHBXXXFP ge. ion. icat to chan ecif l sp ubject a in af es not mits ar li is is : Th metric e ic Not e para Som REL P SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION ●Serial I/O UART or clock synchronous . 3


    Original     		M37735MHBXXXFP 16-BIT q10-bit q12-bit M37735MHBXXXFP 00087F16 FFFFFF16 00007F16 bl p76 transistor bl p76 led clock circuit diagram led using clock circuit diagram with TRANSISTOR BH 4216 ic rom 2816 TD 6316 transistor bl p75 PDF

    SCR 40A 24V

    Abstract: LR3902 E50394 5A20V
    Text: POWER Low oltage, P P.C .C. Mount PO WER TRANSFORMERS - Lo w Voltage .C LO W VOL TA GE - P .C ARD MOUNT LOW OLT P.C .C. BO BOARD UNIVERSAL • 14 output voltages to choose from 5 - 36 VAC R.M.S. • Six VA size models available from - 2.5 to 56VA • Universal operation on 50/60 Hz current, 115 or 230V dual


    Original     		115/230V 183E10 183F10 183G10 183H10 183J10 183K10 183E12 183F12 183G12 SCR 40A 24V LR3902 E50394 5A20V PDF

    BDW84

    Abstract: BDW84D BDW84A BDW84C DIODE 84A bdw84b Darlington Transistors
    Text: Inchange Semiconductor Product Specification BDW84/84A/84B/84C/84D Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDW83/83A/83B/83C/83D ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in power linear and switching


    Original     		BDW84/84A/84B/84C/84D BDW83/83A/83B/83C/83D BDW84 BDW84B BDW84C BDW84D BDW84 BDW84D BDW84A BDW84C DIODE 84A bdw84b Darlington Transistors PDF

    BDW83

    Abstract: BDW83C BDW83B BDW83D diode 83C BDW83A
    Text: Inchange Semiconductor Product Specification BDW83/83A/83B/83C/83D Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDW84/84A/84B/84C/84D ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in power linear and switching


    Original     		BDW83/83A/83B/83C/83D BDW84/84A/84B/84C/84D BDW83 BDW83A BDW83B BDW83C BDW83D BDW83B BDW83 BDW83C BDW83D diode 83C BDW83A PDF

    Untitled

    Abstract: No abstract text available
    Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123B4B BA123B4B 7B69D8 !C"4 989B3#778 "7$%B% 4D9A !E8D9AB&B1A8DF9'78 BA123B4B 7B69D8 ! "4 B!*"4)B!"4 !+"4)B!"4)B!!"4


    Original     		1789AB2CDE7B37FD 989B3 C77777 246A4E5 A8927B3 B5367B3 7EB81B! 7B7C37 7BA79ED 2B36B123456B PDF

    5B8D

    Abstract: No abstract text available
    Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123B4B BA123BB4B 7B69D8 !C"#$4B 989B3%778B989B3%778 "7&'B '( 4D9A !E8D9AB B1A8DF9*78 !+"#$4B,B!-"#$4B,B!"#$4 !."#$4B,B!!"#$4


    Original     		1789AB2CDE7B37FD A123B 989B3 C77777 246A4E5 A8957B6 7B7C67 7BA79ED 5B39B123456B 5B8D PDF

    BGA95

    Abstract: No abstract text available
    Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123B4B BA123B4BB 7B69D8 !C"##4 989B3$778 "7%&B& 4D9A !E8D9AB'B1A8DF9 78 BA123B4BB 7B69D8 ! "##4*B!+"##4*B!"##4 !,"##4*B!!"##4


    Original     		1789AB2CDE7B37FD 989B3 C77777 246A4E5 A8937B4 B6378B4 7EB92B! 7B7C47 7BA79ED 3B37B123456B BGA95 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT28GA60K O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT28GA60K O-220 PDF

    APT28GA60K

    Abstract: MIC4452
    Text: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT28GA60K O-220 shift26) APT28GA60K MIC4452 PDF

    APT28GA60K

    Abstract: MIC4452 max2109 APT30DQ w841
    Text: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT28GA60K O-220 shift26) APT28GA60K MIC4452 max2109 APT30DQ w841 PDF

    diode bridge 16A

    Abstract: No abstract text available
    Text: APT28GA60BD15 APT28GA60SD15 600V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT28GA60BD15 APT28GA60SD15 diode bridge 16A PDF

    APT28GA60BD15

    Abstract: APT6017LLL MIC4452
    Text: APT28GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT28GA60BD15 APT28GA60BD15 APT6017LLL MIC4452 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT28GA60BD15 APT28GA60SD15 600V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT28GA60BD15 APT28GA60SD15 APP11 PDF

    BMA16X16

    Abstract: No abstract text available
    Text: SI GE C P L E S S E Y MARCH 1997 S E M I C O N D U C T O R S CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION ARRAY SIZES The CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density over previous array series. Improvements in design combined with


    OCR Scan     		CLA80000 CLA80k PGA100-ACA-3434 PGA120-ACA-3434 PGA144-ACA-4040 PGA180-ACA-4040 PGA181 -ACA-4040 PGA257-ACA-5151 BMA16X16 PDF

    LT8900

    Abstract: itt 2222a LT89000 2203a ses cree 3535 PS-303 AD clt850 LT8600 2168A LT8500
    Text: Æ | M IT - L I f 1 w II CLA80000 SERIES I Km*Ink HIGH DENSITY CMOS GATE ARRAYS SEMICONDUCTOR DS3820-2.1 July 1997 INTRODUCTION ARRAY SIZES T he C L A 8 0 k gate array se rie s from M itel S e m ico n d u cto r offers advan ta ge s in spe ed and d e n sity over previous array


    OCR Scan     		CLA80000 DS3820-2 rra635 MLA85 MLA87 MLT88 MLT89 GA84-ACA-2828 PGA100-ACA-3434 PGA120-ACA-3434 LT8900 itt 2222a LT89000 2203a ses cree 3535 PS-303 AD clt850 LT8600 2168A LT8500 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


    OCR Scan     		PDF

    2SA362

    Abstract: GE Manual transistor fBF 16
    Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		455kc) 800MC 2SA362 GE Manual transistor fBF 16 PDF

    TF80/30

    Abstract: 2N1504 TF80/60 ZA24 Transistor 2N625 OD603 2SB84 2SB107 tf80-30 NS1110
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT


    OCR Scan     		NPN110. B170024 4000n TF80/30 2N1504 TF80/60 ZA24 Transistor 2N625 OD603 2SB84 2SB107 tf80-30 NS1110 PDF

    2S170

    Abstract: 2S174 2S176 2SA170 2S171 2S172 2S173 2S175 4513A
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		455kc 2S170 2S174 2S176 2SA170 2S171 2S172 2S173 2S175 4513A PDF

    Untitled

    Abstract: No abstract text available
    Text: International IÖR Rectifier PD - 91688 IRG4PSH71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins


    OCR Scan     		IRG4PSH71 O-247 O-264, PDF

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 PDF