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    GEN. PURPOSE DIODE Search Results

    GEN. PURPOSE DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM2195C2A333JE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    GEN. PURPOSE DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD BAS21 Preliminary DIODE GEN ERAL PU RPOSE DI ODES ̈ DESCRI PT I ON The UTC BAS21 is a general purpose diode using UTC’s planar technology to provide customers with high current capacity and high switching speed. ̈ FEAT U RES


    Original     		BAS21 BAS21 BAS21L-AE3-R BAS21G-AE3-R OT-23 QW-R601-040 PDF

    Untitled

    Abstract: No abstract text available
    Text: COMCHIP SMD Gen er al Purpose Bridge Rect ifier Diode SMD Diodes Specialist B01S-G B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)


    Original     		B01S-G B05S-G B10S-G O269AA 125grams. QW-BBR01 PDF

    2010 4n35

    Abstract: 4n35 4N35 circuits optocouplers 4n35
    Text: 4N35 GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 0.69 Opt. Page 1 of 1 Enter Your Part # Home Part Number: 4N35 Online Store 4N35 Diodes GEN ER A L Transistors PU R POS E 6 -PIN PH O TO T RA N SIS T OR OPT OC O U PLER S Integrated Circuits Optoelectronics


    Original     		com/4n35 2010 4n35 4n35 4N35 circuits optocouplers 4n35 PDF

    NTC 2R5-S237

    Abstract: 86H-5410B LFR2205B smd diode bc 2R5-S237 zener diode c18 st 86H-5410 atx 400w circuit schematic arcotronics mkp L6563
    Text: EVAL6563-400W L6563 400 W FOT-controlled PFC pre-regulator Data Brief General description The board implements a 400 W, wide-range mains input, PFC pre-conditioner suitable for ATX PSU, flat screen displays, game console. The low-cost L6563 can be used at such power level thanks to fixed-off-time control. This


    Original     		EVAL6563-400W L6563 AN2485. EVAL6563-400W) NTC 2R5-S237 86H-5410B LFR2205B smd diode bc 2R5-S237 zener diode c18 st 86H-5410 atx 400w circuit schematic arcotronics mkp PDF

    86H-5410

    Abstract: LFR2205B arcotronics 1uf 450V MKP PQ40-500 delta 400w atx power supply capacitor 470nf 50v smd diode bc atx 400w circuit schematic 2R5-S237 EPCOS 470
    Text: EVAL6563-400W L6563 400 W FOT-controlled PFC pre-regulator Data Brief General description The board implements a 400 W, wide-range mains input, PFC pre-conditioner suitable for ATX PSU, flat screen displays, game console. The low-cost L6563 can be used at such power level thanks to fixed-off-time control. This


    Original     		EVAL6563-400W L6563 AN2485. EVAL6563-400W) 2007n 86H-5410 LFR2205B arcotronics 1uf 450V MKP PQ40-500 delta 400w atx power supply capacitor 470nf 50v smd diode bc atx 400w circuit schematic 2R5-S237 EPCOS 470 PDF

    Untitled

    Abstract: No abstract text available
    Text: ASSR-4110 and ASSR-4120 General Purpose, Form A, Solid State Relay 400V/0.12A/25Ω Data Sheet Description Features The ASSR-41x0 Series consists of an AlGaAs infrared light-emitting diode (LED) input stage optically coupled to a high-voltage output detector circuit. The


    Original     		ASSR-4110 ASSR-4120 00V/0 2A/25) ASSR-41x0 ASSR-4120 AV01-0618EN PDF

    mosfet based power inverter project

    Abstract: MS 1307 mosfet mosfet ms 1307 mitsubishi sic MOSFET igbt based high frequency inverter 10KV SiC NATIONAL IGBT Mitsubishi SiC IPM module "silicon carbide" FET home made inverter
    Text: Present PresentStatus StatusAnd AndFuture FutureProspects Prospectsof ofSiC SiCPower PowerDevices Devices Contributors : Gourab Majumdar Chief Engineer, Power Device Works, Mitsubishi Electric Corporation, Japan John Donlon Senior Application Engineer, Powerex Inc., U.S.A.


    Original     		PDF

    ECG584 schottky

    Abstract: diode ECG109 diode ecg 588 vat 2000 ge ECG575 Z3 DIODE ECG577 Z4 diode Diode ECG110A ECG113
    Text: Diodes and R<£ctifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description ECG109 ECG110A Gen Purp Ge Gen Purp Ge 100 40 ECG110MP Matched Diode Pair Ge 30 ECG112 UHF Mixer (Schottky) Si Common Cathode Si Dual Diode, CenterTap TV Horiz ECG114


    OCR Scan     		ECG109 ECG110A ECG110MP ECG112 ECG113A ECG114 ECG115 ECG592 ECG593 ECG694 ECG584 schottky diode ECG109 diode ecg 588 vat 2000 ge ECG575 Z3 DIODE ECG577 Z4 diode Diode ECG110A ECG113 PDF

    DIODE SW-05

    Abstract: No abstract text available
    Text: DIODES & RECTIFIERS GENERAL PURPOSE Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts pRV If !f s m VF Irr 109 Ge Gen Purp, Fast Switch D07 91 100 0.2 0.5 1 - 110MP Ge Gen Purp, AFC, Matched Diode Pair D07 91 40


    OCR Scan     		110MP OT-23 200MHz T0220 b43125T 0P03SSÃ DIODE SW-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: ß Semiconductor LM3045/LM3046/LM3086 Transistor Arrays General Description Features The LM3045, LM3046 and LM3086 each consist of five gen­ eral purpose silicon NPN transistors on a common mono­ lithic substrate. Two of the transistors are internally con­


    OCR Scan     		LM3045/LM3046/LM3086 LM3045, LM3046 LM3086 LM3045 14-lead PDF

    LT111A

    Abstract: No abstract text available
    Text: uim TECHNOLOGY LT111A/LT311A LM111/LM311 Voltage Comparator F€OTUR€S DCSCfflPTIOn • ■ ■ ■ ■ ■ ■ The LT111A is an improved version of the LM 111 gen­ eral purpose comparator. These new devices offer maximum input offset voltage of 1.0mV and input off­


    OCR Scan     		LT111A/LT311A LM111/LM311 LT111A 250ns. 250nS 120ppm 30ppm 10ppm/ 10kHz. PDF

    fairchild 9314

    Abstract: D type latch ScansUX986
    Text: TTL/MSI 9314 QUAD LATCH DESC RIPTIO N — The MSI 9314 is a m u ltifu n ctio n a l 4 -B it Latch. The latch is designed fo r gen­ eral purpose storage applications in high speed digital systems. A ll inputs feature diode clamping to reduce negative line transients. A ll outputs have active p u ll-up c irc u itry to provide high capac­


    OCR Scan     		PDF

    LM311N-8

    Abstract: LM311J-8 LM311J8 LM311T appli note LM311 T05M PLIC LT111X LT111A
    Text: LT111A / L T 3 1 1A LM 111/LM311 / T u r m TECHNOLOGY V oltage C om parator F€flTUR€S D c s c n iP T io n • ■ ■ ■ ■ ■ ■ The LT111A is an improved version of the LM111 gen­ eral purpose comparator. These new devices offer maximum input offset voltage of 1.0mV and input off­


    OCR Scan     		LT111A 111/LM311 LM111 250ns. 120ppm 30ppm 10ppm/ LM311N-8 LM311J-8 LM311J8 LM311T appli note LM311 T05M PLIC LT111X PDF

    YTS4403

    Abstract: No abstract text available
    Text: YTS4403 SILICON PNP EPITAXIAL TYPE U n i t in m m FOR GEN ERA L PURPOSE USE S WIT CHI NG AN D A MPL I F I E R +05 APPLICATIONS. FEATURES: •Low Leakage Current : IC E V = - 1 0 0 n A M a x . , Ig v = 1 0 0 n A ( M a x . ) @ V c e =-35V, V b e =0.4V • Excellent DC Current Gain Linearity


    OCR Scan     		YTS4403 -15raA 8G-59 500mA, -150mA, -500mA, 100MHz 20/iB YTS4403 PDF

    D 92 M - 02 DIODE

    Abstract: 110MP fast diode 1.5 A diode d07 Super matched pair 1a fast diode
    Text: DIODES AND HECTII NTE Type No. Material Description and Application Case Style Diag. No. Maximum Average Forward Current Amps Max Peak Surge Forward Current (Amps) Maximum Forward Voltage Drop (Volts) Reverse Recovery Time (ns) P RV If If s m vF *fT 0.5


    OCR Scan     		110MP Brid200 D027A T0220 D 92 M - 02 DIODE fast diode 1.5 A diode d07 Super matched pair 1a fast diode PDF

    Z6 DIODE

    Abstract: z12 diode Z4 diode z11 diode diode ECG125 ECG555 ECG584 schottky ECG117A ecg125 diode ECG178MP
    Text: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr


    OCR Scan     		ECG109 ECG110A ECG110MP ECG113A ECG114 DO-27 ECG515 ECG551 ECG117A ECG556 Z6 DIODE z12 diode Z4 diode z11 diode diode ECG125 ECG555 ECG584 schottky ECG117A ecg125 diode ECG178MP PDF

    diode ECG125

    Abstract: CI 3060 elsys ECG113A ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky
    Text: PHILIPS E C 6 INC 54E ]> • b b S 3 ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time


    OCR Scan     		bb53R2fi ECG109 ECG110A ECG110MP ECG113A ECG114 1N415C 1N415E 1N416C 1N416E diode ECG125 CI 3060 elsys ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky PDF

    Philips ECG125

    Abstract: t75 hv diode ecg125 diode ECG125 ECG605 Z6 DIODE ECG558 ECG156 ECG584 schottky ECG1151
    Text: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr


    OCR Scan     		Q00720S ECG109 ECG110A ECG110MP ECG112 ECG113A 72OLARITY OT-23 SP-92 ECG615A Philips ECG125 t75 hv diode ecg125 diode ECG125 ECG605 Z6 DIODE ECG558 ECG156 ECG584 schottky ECG1151 PDF

    BFW12

    Abstract: bc264c BFT46
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs N-CHANNEL JUNCTION FETS FOR AMPLIFIERS rating type number characteristics ± V DS max. ’d ss Ciss typ. c rss l v f s l 1 pF) typ.


    OCR Scan     		PMBFJ308 PMBFJ309 PMBFJ310 PMBF4416 PMBF4416A PMBF5484 PMBF5485 PMBF5486 BFW12 bc264c BFT46 PDF

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 PDF

    metal rectifier diode

    Abstract: DIODE S2E D026 110MP Super matched pair d041 12 pulse diode rectifier D07 15 diode diode d07 104 FAST RECOVERY DIODE 1A
    Text: N T E ELECTRONICS TNC S2E D • b 4 3 1 2 S e G Q Q 2 b 3 S ‘H S H N T E T~Ö I - 0 I r I.CHbw .ü t N C r f A L ,r : U B r U O E — T-39-01 Maximum Average Forward Currant Ampe) Max Peek Surge Forward Currant (Ampe) Maximum Forward Vortage Drop (Volts)


    OCR Scan     		b4312Sel 110MP 100pA T0220 metal rectifier diode DIODE S2E D026 Super matched pair d041 12 pulse diode rectifier D07 15 diode diode d07 104 FAST RECOVERY DIODE 1A PDF

    DIODE S2E

    Abstract: No abstract text available
    Text: N T E ELE CTRONICS TNC — S2E D • I r I . C H bw .ü b 4 3 1 2 S e GQQ2b3S ‘H S H N T E t N C r f A L ,r : U B r U T-39-01 Maxim um Average Forw ard Currant Ampe) Max Peek Surge Forw ard Currant (Ampe) Maxim um Forward Vortage Drop (Volts) R ecovery


    OCR Scan     		T-39-01 110MP 100pA T0220 OT-23 DIODE S2E PDF

    TF 450

    Abstract: No abstract text available
    Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BVceo BVebo h FE Pd fT T0218


    OCR Scan     		T0218 NTE2305) T0220 TF 450 PDF

    erc12 diode

    Abstract: marking A7 ERC12 DIODE A46 marking A46 general purpose diode marking code -06 general purpose diode marking code -08
    Text: ERC12 i.2A I Outline D raw ings - M t M m m ? * * - k _ GEN ERAL USE R EC TIFIER DIODE -w¿3 5. — 28MIN — /Q 8 20MIN — : Features • •0— Hi gh surge current • 'JV£ M $ A • f f if flfit t ■ S /jv i Marking Compact size, lightweight


    OCR Scan     		ERC12 28MIN erc12 diode marking A7 DIODE A46 marking A46 general purpose diode marking code -06 general purpose diode marking code -08 PDF