2SD2127
Abstract: itt Guide zener diode
Text: TO SH IBA 2SD2127 2 S D 2 1 27 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm LAMP, SOLENOID DRIVE APPLICATIONS. 10 ±0.3 . 03.2 ±0.2 MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage
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2SD2127
2SD2127
itt Guide zener diode
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MF-2500FXD
Abstract: IEC61000-6-3
Text: Mitsubishi Electric Corp. Datasheet MITSUBISHI OPTICAL DEVICES MF-2500FXD Series 2.5Gbps SFP TRANSCEIVER MODULE 2.7Gbps Multi-Rate, S-16.1 / IR-1 SFP Transceiver with Digital Diagnostic Monitoring Interface MF-2500FXD Series 1. Description This transceiver is compliant with Small
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MF-2500FXD
UQ9-06-006
IEC61000-6-3
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CNB1304H
Abstract: ON2175
Text: Reflective Photosensors Photo Reflectors CNB1304H (ON2175) Reflective photosensor Tape end sensor for DAT (R2.3) 4.0±0.3 Unit: mm φ2.2±0.3 (4-R0.3) • Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage emitting diode) Forward current Power dissipation *1
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CNB1304H
ON2175)
PRSTR104-005
CNB1304H
ON2175
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SFP L-16.2 DDM
Abstract: G957 MF-2500FXE mitsubishi rosa MITSUBISHI date code
Text: Mitsubishi Electric Corp. Datasheet MITSUBISHI OPTICAL DEVICES MF-2500FXE Series 2.5Gbps SFP TRANSCEIVER MODULE 2.7Gbps Multi-Rate, L-16.1, L-16.2 / LR-1, LR-2 SFP Transceiver with Digital Diagnostic Monitoring Interface MF-2500FXE Series 1. Description
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MF-2500FXE
UQ9-06-007
SFP L-16.2 DDM
G957
mitsubishi rosa
MITSUBISHI date code
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Untitled
Abstract: No abstract text available
Text: 1SV172 TO SHIBA 1 S V 1 72 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm V H F- U H F BAND RF ATTENUATOR APPLICATIONS. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
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1SV172
SC-59
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F16V
Abstract: MP4208
Text: TOSHIBA MP4208 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE L2-?r-MOSV 4 IN 1 M P 4 208 HIGH POWER HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING 25.210.2 - 4 - Volt Gate Drive Available
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MP4208
F16V
MP4208
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CNZ1215
Abstract: ON1215 "Photo Interrupter" Application Note
Text: Transmissive Photosensors Photo lnterrupters CNZ1215 (ON1215) Unit: mm Photo Interrupter 14.3±0.3 Mark for Indicating LED side Power dissipation *1 2.5±0.2 6.2±0.2 Symbol Rating VR 3 Unit V IF 25 mA PD 70 mW VCEO 20 V Emitter-collector voltage (Base open)
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CNZ1215
ON1215)
CNZ1215
ON1215
"Photo Interrupter" Application Note
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV 160 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 160 Unit in mm AFC APPLICATION FOR FM RECEIVER Small Package. Low Series Resistance : rs = 0.70 Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature
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50MHz
--50MHz
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SCR GTO
Abstract: RC firing circuit FOR SCR SCR Gate Drive scr RC snubber design dc circuit breaker using SCR gto firing circuit SCR 6 pulse Gate Drive selen scr latching RC snubber scr design inductive load
Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 2.0 POW-R-BLOK Module Mounting Figure 2.1 SCR/GTO/Diode POW-R-BLOK™ Modules Application Information Mounting Screw Fastening Pattern ➃ When mounting POW-R-BLOK™ modules to a heatsink, care
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ON1122
Abstract: CNZ1122 CNZ1128 ON1128 ic iR light control fast photo diode
Text: Transmissive Photosensors Photo Interrupters CNZ1122, CNZ1128 (ON1122, ON1128) Photo Interrupters Unit : mm CNZ1122 Mark for indicating LED side 25.0±0.35 13.0±0.3 3.0±0.2 M Di ain sc te on na tin nc ue e/ d Device center Overview 7.0 min. 2.5±0.2 ue
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CNZ1122,
CNZ1128
ON1122,
ON1128)
CNZ1122
CNZ1122
CNZ1128
ON1122
ON1128
ic iR light control
fast photo diode
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SM 8002
Abstract: ON2152 CNZ2152 ic iR light control SM 8002 C
Text: Reflective Photosensors Photo Reflectors CNZ2152 (ON2152) Reflective photosensor Non-contact point SW, object sensing Unit: mm 3.2±0.2 • Overview Mark for indicating LED side φ1.5 ■ Applications ■ Absolute Maximum Ratings Ta = 25°C Parameter Input (Light Reverse voltage
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CNZ2152
ON2152)
PRSTR104-001
SM 8002
ON2152
CNZ2152
ic iR light control
SM 8002 C
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CNZ1111
Abstract: CNZ1112 ON1111 ON1112
Text: Transmissive Photosensors Photo lnterrupters CNZ1111 (ON1111), CNZ1112 (ON1112) Photo lnterrupters CNZ1111 Unit: mm For contactless SW, object detection M Di ain sc te on na tin nc ue e/ d 0.45±0.1 • Overview Mark for indicating LED side 25.0±0.35 A'
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CNZ1111
ON1111)
CNZ1112
ON1112)
PISTR104-010
CNZ1111
CNZ1112
ON1111
ON1112
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ZY6.8
Abstract: 245 zener General Semiconductor ZY5.6 ZY3,9 ZY10 ZY11 ZY12 ZY13 ZY15
Text: ZY1, ZY3.6 thru ZY200 Vishay Semiconductors formerly General Semiconductor Zener Diodes DO-204AM 1.0 25.4 MIN. 0.110 (2.79) 0.050 (1.27) DIA. 0.205 (5.20) 0.125 (3.18) VZ Range 1.0, 3.6 to 200V Power Dissipation 2.0W ed e d n Exte e Rang g a t l Vo Features
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ZY200
DO-204AM
DO-204AM
20K/box
02-May-02
ZY6.8
245 zener
General Semiconductor
ZY5.6
ZY3,9
ZY10
ZY11
ZY12
ZY13
ZY15
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TA-3168
Abstract: CPH6311 D2500 marking JM
Text: CPH6311 Ordering number : EN6794A SANYO Semiconductors DATA SHEET CPH6311 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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CPH6311
EN6794A
900mm20
TA-3168
CPH6311
D2500
marking JM
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IN914
Abstract: IN916 in914 diode 1N914 1N914B
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer HIGH SPEED SILICON SWITCHING DIODE IN914, B IN916 250mW DO- 35 Glass Axial Package FEATURES Intended for General Purpose Application. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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IN914,
IN916
250mW
C-120
Rev031001
IN914
IN916
in914 diode
1N914
1N914B
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zy 406
Abstract: ZY 20 DIODE diode zy Diode case DO41
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON POWER 2.0 WATT ZENER DIODE ZY9.1V TO ZY12V DO- 41 Glass Axial Package Low Power General Purpose Voltage Regulator Diode ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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ZY12V
C-120
1N4150Rev011001
zy 406
ZY 20 DIODE
diode zy
Diode case DO41
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toshiba diode 1A
Abstract: 1SV307 HP4291A
Text: 1SV307 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1SV 307 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package Low Series Resistance Small Total Capacitance : rs = 1.10 Typ. : Or = 0.3pF (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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1SV307
HP4291A
toshiba diode 1A
1SV307
HP4291A
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CNZ1102
Abstract: CNZ1108 ON1102 ON1108 transistor EN 13003 A
Text: Transmissive Photosensors Photo lnterrupters CNZ1102 (ON1102), CNZ1108 (ON1108) Photo Interrupters CNZ1102 Unit: mm Mark for indicating LED side 25.0±0.35 M Di ain sc te on na tin nc ue e/ d 13.0±0.3 Device center 2.5±0.2 7.0 min. ue pl d in an c se ed lud
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CNZ1102
ON1102)
CNZ1108
ON1108)
CNZ1102
CNZ1108
ON1102
ON1108
transistor EN 13003 A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA FAST RECOVERY DIODE SEMICONDUCTOR 800EXH22 TnCUIDA • w w ■ II TECHNICAL DATA SILICON DIFFUSED TYPE 800EXH22 HIGH SPEED RECTIFIER APPLICATIONS • Repetitive Peak Reverse Voltage : Vr r m = 2500V • Average Forward C urrent : l y (AV)= 800A •
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800EXH22
800EXH22
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toshiba diode 1A
Abstract: 1SV308 HP4291A
Text: TO SHIBA 1SV308 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1SV 308 VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package Low Series Resistance Small Total Capacitance : rs = 1.10 Typ. : Or = 0.3pF (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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1SV308
HP4291A
toshiba diode 1A
1SV308
HP4291A
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 1SS364 SILICON EPITAXIAL PLANAR TYPE TOSHIBA DIODE 1 S S 3 64 VHF TUNER BAND SWITCH APPLICATIONS • Small Package. • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance : rs = 0.6£2 (Typ.) MAXIMUM RATINGS (Ta = 255C) SYMBOL
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1SS364
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV128 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 S V 1 28 VHF-UHF BAND RF ATTENUATOR APPLICATIONS. Small Package Small Total Capcitance : O r = 0-25pF Typ. MAXIMUM RATINGS (Ta = 255C) SYMBOL RATING UNIT 50 V VR mA 50 If 125 °C Tj —55—125 °C
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1SV128
0-25pF
100MHz
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Untitled
Abstract: No abstract text available
Text: 1SS268 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 s S 2 68 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS FEATURES : • Small Package. • Small Total Capacitance : CFj,= i.2pF Max. • Low Series Resistance ; rg = 0,60 (Typ,) MAXIMUM RATINGS (Ta = 255C)
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1SS268
100MHz
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LNA2901L For optical control systems Not soldered 2.0 max. GaAs Infrared Light Emitting Diode M Di ain sc te on na tin nc ue e/ d φ5.0±0.2 7.65±0.2 • Features 1.5 2-0.8 max. 2-0.6±0.15 (2.0) 25.6±1.0 5.05±0.3 (1.0)
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LNA2901L
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