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    GENERAL SEMICONDUCTOR DIODE MARKING 39A Search Results

    GENERAL SEMICONDUCTOR DIODE MARKING 39A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR DIODE MARKING 39A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS3662 N-Channel Power Trench MOSFET 100V, 39A, 14.8mΩ Features General Description „ Max rDS on = 14.8mΩ at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


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    FDMS3662 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF76633S3ST_F085 N-Channel Logic Level UltraFET Power MOSFET 100V, 39A, 35mΩ D D Features „ Typ rDS on = 28mΩ at VGS = 10V, ID = 39A „ Typ Qg(tot) = 56nC at VGS = 10V, ID = 20A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263AB


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    HUF76633S3ST O-263AB PDF

    FQP45N03LT

    Abstract: FQP45N03L
    Text: FQP45N03L N-Channel Logic Level MOSFETs 30V, 39A, 0.021Ω General Description Features This device employs advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves


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    FQP45N03L 1450pF O-220AB FQP45N03LT FQP45N03L PDF

    fdd6676as

    Abstract: TO-252 fairchild FDD6676A
    Text: FDD6676AS tm 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


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    FDD6676AS FDD6676AS TO-252 fairchild FDD6676A PDF

    FCH041N60E

    Abstract: No abstract text available
    Text: SuperFET II FCH041N60E N-Channel MOSFET Features Description ® The SuperFET II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower


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    FCH041N60E FCH041N60E 285nC) 735pF) PDF

    FDD6676A

    Abstract: FDD6676AS
    Text: FDD6676AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


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    FDD6676AS FDD6676AS FDD6676A PDF

    FDPF39N20

    Abstract: No abstract text available
    Text: FDP39N20 / FDPF39N20 N-Channel UniFETTM MOSFET 200 V, 39 A, 66 m Features Description • RDS on = 66 m (Max.) @ VGS = 10 V, ID = 19.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


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    FDP39N20/ FPDF39N20 FDP39N20 FDPF39N20 FDPF39N20 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD6676AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


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    FDD6676AS FDD6676AS PDF

    Untitled

    Abstract: No abstract text available
    Text: FCH041N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 77 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance


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    FCH041N60E PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP39N20 / FDPF39N20 N-Channel UniFETTM MOSFET 200 V, 39 A, 66 mΩ Features Description • RDS on = 66 mΩ (Max.) @ VGS = 10 V, ID = 19.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.


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    FDP39N20 FDPF39N20 PDF

    Untitled

    Abstract: No abstract text available
    Text: HT7939A High Current and Performance White LED Driver Feature General Description • Input voltage range: 2.6V~5.5V The HT7939A is a high efficiency boost converter for driving multiple White LEDs using current mode operation. The device is designed to drive up to 39


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    HT7939A HT7939A 200kHz PDF

    Untitled

    Abstract: No abstract text available
    Text: HT7939A High Current and Performance White LED Driver Feature General Description • Input voltage range: 2.6V~5.5V The HT7939A is a high efficiency boost converter for driving multiple White LEDs using current mode operation. The device is designed to drive up to 39


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    HT7939A PDF

    GE Transient Voltage Suppression Manual

    Abstract: diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code
    Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


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    DL150/D May-2001 no422-3781 r14525 DL150/D GE Transient Voltage Suppression Manual diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code PDF

    orient 817b

    Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
    Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


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    DL150/D May-2001 r14525 DLD601 orient 817b UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b PDF

    XD 105 94V-0

    Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    vse-db0002-1102 XD 105 94V-0 BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG PDF

    Untitled

    Abstract: No abstract text available
    Text: 60 V, 48 A, 5.3 mΩ Low RDS ON N ch Trench Power MOSFET DKI06075 Features Package TO-252  V(BR)DSS - 60 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 7.0 mΩ max. (VGS = 10 V, ID = 34 A)


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    DKI06075 O-252 DKI06075-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: 60 V, 78 A, 5.1 mΩ Low RDS ON N ch Trench Power MOSFET SKI06073 Features Package TO-263  V(BR)DSS - 60 V (ID = 100 µA)  ID - 78 A  RDS(ON) - 6.6 mΩ max. (VGS = 10 V, ID = 39.0 A)


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    SKI06073 O-263 SKI06073-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: 60 V, 40 A, 4.8 mΩ Low RDS ON N ch Trench Power MOSFET GKI06071 Features Package  V(BR)DSS - 60 V (ID = 100 µA)  ID - 40 A  RDS(ON) - 6.5 mΩ max. (VGS = 10 V, ID = 34.0 A)


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    GKI06071 GKI06071-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: 60 V, 78 A, 5.1 mΩ Low RDS ON N ch Trench Power MOSFET EKI06075 Features Package  V(BR)DSS - 60 V (ID = 100 µA)  ID - 78 A  RDS(ON) - 6.6 mΩ max. (VGS = 10 V, ID = 39.0 A)


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    EKI06075 O-220 EKI06075-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: 60 V, 52 A, 5.1 mΩ Low RDS ON N ch Trench Power MOSFET FKI06075 Features Package  V(BR)DSS - 60 V (ID = 100 µA)  ID - 52 A  RDS(ON) - 6.6 mΩ max. (VGS = 10 V, ID = 39.0 A)


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    FKI06075 O-220F FKI06075-DS PDF

    A1907

    Abstract: TO-220F-3SG
    Text: BMS3003 Ordering number : ENA1907A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications


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    ENA1907A BMS3003 13200pF PW10s, --36V, A1907-7/7 A1907 TO-220F-3SG PDF

    A1907

    Abstract: TF-680
    Text: BMS3003 Ordering number : ENA1907 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications


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    BMS3003 ENA1907 13200pF PW10s, A1907-5/5 A1907 TF-680 PDF

    Untitled

    Abstract: No abstract text available
    Text: BMS3003 Ordering number : ENA1907A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications


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    BMS3003 ENA1907A 13200pF A1907-7/7 PDF

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


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    Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28 PDF