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    GENERAL SEMICONDUCTOR GP30K Search Results

    GENERAL SEMICONDUCTOR GP30K Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR GP30K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GP30A, GP30B, GP30D, GP30G, GP30J, GP30K, GP30M www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier condition structure for high reliability • Cavity-free glass-passivated junction


    Original     		PDF GP30A, GP30B, GP30D, GP30G, GP30J, GP30K, GP30M 22-B106 DO-201AD AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: GP30A thru GP30M Vishay Semiconductors Patented* formerly General Semiconductor Glass Passivated Junction Plastic Rectifiers Reverse Voltage 50 to 1000V Forward Current 3.0A Features DO-201AD • Plastic package has Underwriters Laboratories Flammability Classification 94V-0


    Original     		PDF GP30A GP30M DO-201AD MIL-S-19500 50mVp-p 18-Mar-02

    GP30M

    Abstract: GP30J-E3 GP30J-E3/54 GP30A JESD22-B102D J-STD-002B GP30B
    Text: GP30A thru GP30M Vishay General Semiconductor Glass Passivated Junction Plastic Rectifiers FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Low leakage current, typical IR less than 0.1 µA


    Original     		PDF GP30A GP30M DO-201AD MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 GP30M GP30J-E3 GP30J-E3/54 JESD22-B102D J-STD-002B GP30B

    gp30jhe3

    Abstract: No abstract text available
    Text: GP30A thru GP30M Vishay General Semiconductor Glass Passivated Junction Plastic Rectifiers FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Low leakage current, typical IR less than 0.1 µA


    Original     		PDF GP30A GP30M MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 gp30jhe3

    Untitled

    Abstract: No abstract text available
    Text: GP30A thru GP30M Vishay General Semiconductor Glass Passivated Junction Plastic Rectifiers FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Low leakage current, typical IR less than 0.1 µA


    Original     		PDF GP30A GP30M DO-201AD MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05

    GP30M

    Abstract: GP30A JESD22-B102 J-STD-002 GP30J
    Text: GP30A thru GP30M Vishay General Semiconductor Glass Passivated Junction Plastic Rectifiers FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Low leakage current, typical IR less than 0.1 µA


    Original     		PDF GP30A GP30M DO-201AD MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08 GP30M JESD22-B102 J-STD-002 GP30J

    Untitled

    Abstract: No abstract text available
    Text: GP30A thru GP30M Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier condition structure for high reliability • Cavity-free glass-passivated junction • Low leakage current, typical IR less than 0.1 A


    Original     		PDF GP30A GP30M MIL-S-19500 DO-201AD 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC.

    GP30A

    Abstract: GP30M J-STD-002
    Text: GP30A thru GP30M Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier condition structure for high reliability • Cavity-free glass-passivated junction • Low leakage current, typical IR less than 0.1 A


    Original     		PDF GP30A GP30M MIL-S-19500 DO-201AD 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 GP30M J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: GP30A thru GP30M Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier condition structure for high reliability • Cavity-free glass-passivated junction • Low leakage current, typical IR less than 0.1 A • Low forward voltage drop


    Original     		PDF GP30A GP30M MIL-S-19500 22-B106 DO-201AD AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08

    COLOR tv tube charger circuit diagrams

    Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0001-1102 I8262 COLOR tv tube charger circuit diagrams MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a

    GP30B

    Abstract: GP30D GP30A GP30G GP30M
    Text: GP30A thru GP30M Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Plastic Rectifiers DO-201AD 1.0 25.4 Min. * d e t n Features e t a P • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High temperature metallurgically bonded construction


    Original     		PDF GP30A GP30M DO-201AD MIL-S-19500 50mVp-p 16-Dec-02 GP30B GP30D GP30G GP30M

    Schottky Diode 039 B34

    Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0001-0809 Schottky Diode 039 B34 S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D

    GP30A

    Abstract: GP30B GP30D GP30M JESD22-B102D J-STD-002B GP30K
    Text: GP30A thru GP30M Vishay General Semiconductor Glass Passivated Junction Plastic Rectifiers Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 125 A IR 5.0 µA VF 1.2 V, 1.1 V Tj max. 175 °C d* e t n Pate DO-201AD * Glass-plastic encapsulation


    Original     		PDF GP30A GP30M DO-201AD MIL-S-19500 08-Apr-05 GP30B GP30D GP30M JESD22-B102D J-STD-002B GP30K

    gp30j

    Abstract: GENERAL SEMICONDUCTOR gp30k GP30M
    Text: GP30A thru GP30M Vishay General Semiconductor Glass Passivated Junction Plastic Rectifiers Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 125 A IR 5.0 µA VF 1.2 V, 1.1 V Tj max. 175 °C d* e t n Pate DO-201AD * Glass-plastic encapsulation


    Original     		PDF GP30A GP30M DO-201AD MIL-S-19500 DO-201AD, 13-Sep-05 gp30j GENERAL SEMICONDUCTOR gp30k GP30M

    EQUIVALENT BYD33D

    Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
    Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and


    Original     		PDF PBYR3045WT BYD73D CTB34M BYD73G SB1035 PBYR1040 1N5059 SB1040 EQUIVALENT BYD33D 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent

    BT136-600E equivalent

    Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
    Text: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.


    Original     		PDF 10TQ045S 11DQ03 11DQ04 11EQ03 11EQ04 11EQS 15DF4 1N3645 BT136-600E equivalent D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent

    BU4508DX equivalent

    Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
    Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		PDF BT148-600R BT148-400R BU4508DX equivalent BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		PDF BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    KL SN 102 94v-0

    Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
    Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results


    OCR Scan     		PDF

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G