FDD26AN06A0
Abstract: No abstract text available
Text: FDD26AN06A0_F085 N-Channel PowerTrench MOSFET 60V, 36A, 26mΩ Features Applications • rDS ON = 20mΩ (Typ.), VGS = 10V, ID = 36A • Motor / Body Load Control • Qg(tot) = 13nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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FDD26AN06A0
O-252AA
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Untitled
Abstract: No abstract text available
Text: FDD26AN06A0_F085 N-Channel PowerTrench MOSFET 60V, 36A, 26mΩ Features Applications • rDS ON = 20mΩ (Typ.), VGS = 10V, ID = 36A • Motor / Body Load Control • Qg(tot) = 13nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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FDD26AN06A0
O-252AA
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FDD24AN06LA0
Abstract: No abstract text available
Text: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management
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FDD24AN06LA0
O-252AA
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Untitled
Abstract: No abstract text available
Text: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management
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FDD24AN06LA0
O-252AA
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Untitled
Abstract: No abstract text available
Text: FQA36P15 / FQA36P15_F109 P-Channel QFET MOSFET −150 V, -36 A, 90 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQA36P15
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M043 Diode
Abstract: FDD26AN06A0 m043
Text: FDD26AN06A0_F085 N-Channel PowerTrench MOSFET 60V, 36A, 26mΩ Features Applications • rDS ON = 20mΩ (Typ.), VGS = 10V, ID = 36A • Motor / Body Load Control • Qg(tot) = 13nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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FDD26AN06A0
O-252AA
M043 Diode
m043
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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KP-69
Abstract: mosfet 30V 18A TO 252 FDD24AN06LA0
Text: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management
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FDD24AN06LA0
O-252AA
KP-69
mosfet 30V 18A TO 252
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N310AS
Abstract: N310AP ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST
Text: ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
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ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3
1800pF
N310AS
N310AP
ISL9N310AP3
ISL9N310AS3
ISL9N310AS3ST
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N310AS
Abstract: ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST M028
Text: ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
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ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3
1800pF
N310AS
ISL9N310AP3
ISL9N310AS3
ISL9N310AS3ST
M028
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6V8C 67
Abstract: No abstract text available
Text: P4SMA6.8A Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA V(BR) 6.8 to 220V Peak Pulse Power 400W Cathode Band 0.065 (1.65) Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)
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DO-214AC
29-Aug-02
6V8C 67
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Untitled
Abstract: No abstract text available
Text: TPCA8A01-H ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type Ultra-High-Speed U-MOS Ⅲ TPCA8A01-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm
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TPCA8A01-H
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FCP36N60N
Abstract: fcp36N60 Mosfet application note fairchild FCp Series MOSFET 600V 36A
Text: SupreMOSTM FCP36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS on = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCP36N60N
FCP36N60N
fcp36N60
Mosfet application note fairchild
FCp Series
MOSFET 600V 36A
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6v8a
Abstract: diode 6v8a IEC1000-4-4 IEC801-2 IEC801-4 P4SMA10CA
Text: P4SMA Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA d e e d en ang t x E eR g a t l Vo Cathode Band 0.065 (1.65) Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)
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DO-214AC
DO-214Az
50mVp-p
17-Feb-04
6v8a
diode 6v8a
IEC1000-4-4
IEC801-2
IEC801-4
P4SMA10CA
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Untitled
Abstract: No abstract text available
Text: P4SMA6.8A Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) V(BR) Unidirectional 6.8 to 540V V(BR) Bidirectional
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DO-214AC
9-Apr-02
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Fairchild Semiconductor - Process
Abstract: FCP36N60N mosfet 600v
Text: SupreMOSTM FCP36N60N tm N-Channel MOSFET 600V, 36A, 90mΩ Features Description • RDS on = 81mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCP36N60N
Fairchild Semiconductor - Process
FCP36N60N
mosfet 600v
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FCB36N60N
Abstract: ISD36A MOSFET 600V 36A
Text: SupreMOSTM FCB36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS on = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCB36N60N
FCB36N60N
ISD36A
MOSFET 600V 36A
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6v8a
Abstract: diode marking on semiconductor transzorb IEC1000-4-4 3 Volt transzorb 420 6V8A diode 47c diode 6v8a TVS 33A type marking code 30C IEC801-2
Text: P4SMA Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) V(BR) Unidirectional 6.8 to 540V V(BR) Bidirectional 6.8 to 220V
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DO-214AC
DO-214AC
50mVp-p
09-Oct-02
6v8a
diode marking on semiconductor transzorb
IEC1000-4-4
3 Volt transzorb
420 6V8A
diode 47c
diode 6v8a
TVS 33A
type marking code 30C
IEC801-2
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Untitled
Abstract: No abstract text available
Text: P4SMA Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA d e e d en ang t x E eR g a t l Vo Cathode Band 0.065 (1.65) Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)
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DO-214AC
08-Apr-05
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N-Channel 40V MOSFET 32a
Abstract: FDB8878
Text: FDB8878 N-Channel Logic Level PowerTrench MOSFET 30V, 48A, 14mΩ General Descriptions Features rDS ON = 14mΩ, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 18mΩ, VGS = 4.5V, ID = 36A improve the overall efficiency of DC/DC converters using
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FDB8878
O-263AB
N-Channel 40V MOSFET 32a
FDB8878
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Untitled
Abstract: No abstract text available
Text: FDP8878 N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15mΩ Features General Descriptions ̈ rDS ON = 15mΩ, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to ̈ rDS(ON) = 19mΩ, VGS = 4.5V, ID = 36A improve the overall efficiency of DC/DC converters using
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FDP8878
O-220AB
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FDP8878
Abstract: No abstract text available
Text: FDP8878 N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15mΩ General Descriptions Features rDS ON = 15mΩ, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 19mΩ, VGS = 4.5V, ID = 36A improve the overall efficiency of DC/DC converters using
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FDP8878
O-220AB
FDP8878
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Untitled
Abstract: No abstract text available
Text: SupreMOS FCA36N60NF TM tm N-Channel MOSFET, FRFET 600V, 36A, 95mΩ Features Description • RDS on = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling
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FCA36N60NF
FCA36N60NF
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