B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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smd code marking QFN-4
Abstract: No abstract text available
Text: Application Specific Solution from ON Semiconductor NCP1840 8-Channel Programmable LED Driver MARKING DIAGRAM The NCP1840 is a highly integrated general purpose LED driver with the ability to drive up to eight LEDs. A high efficiency, low noise, quad mode charge pump allows the
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NCP1840
QFN20
NCP1840/D
smd code marking QFN-4
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2N3053 NPN transistor
Abstract: 2n3053 SILICON TRANSISTOR 2N3053 transistor 2n3053 2n3053 transistor 2N3053A NPN Transistor 2n3053 2N3053 NPN transistor hfe
Text: 2N3053 2N3053A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3053, 2N3053A types are epitaxial planar NPN silicon transistors designed for general purpose applications. MARKING: FULL PART NUMBER TO-39 CASE
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2N3053
2N3053A
2N3053,
100mA,
150mA,
2N3053 NPN transistor
SILICON TRANSISTOR 2N3053
transistor 2n3053
2n3053 transistor
NPN Transistor 2n3053
2N3053 NPN transistor hfe
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Untitled
Abstract: No abstract text available
Text: 2N3053 2N3053A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3053, 2N3053A types are epitaxial planar NPN silicon transistors designed for general purpose applications. MARKING: FULL PART NUMBER TO-39 CASE
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2N3053
2N3053A
2N3053,
150mA
100MHz
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2N2270
Abstract: No abstract text available
Text: 2N2270 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2270 is a NPN silicon transistor, mounted in a hermetically sealed package, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER
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2N2270
100mA,
100mA
150mA,
150mA
17-August
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Untitled
Abstract: No abstract text available
Text: 2N2221A 2N2222A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER
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2N2221A
2N2222A
2N2221A
2N2222A
150mA,
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Untitled
Abstract: No abstract text available
Text: 2N2221A 2N2222A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER
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2N2221A
2N2222A
2N2221A
2N2222A
150mA,
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2N1893
Abstract: No abstract text available
Text: 2N1893 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1893 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE
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2N1893
2N1893
150mA,
150mA
20MHz
100kHz
23-April
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Untitled
Abstract: No abstract text available
Text: 2N2405 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2405 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE
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2N2405
2N2405
150mA,
150mA
20MHz
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CW-75
Abstract: 2N2222A marking code 2N2222A marking
Text: 2N2221A 2N2222A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A types are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER
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2N2221A
2N2222A
150mA,
CW-75
2N2222A marking code
2N2222A marking
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Untitled
Abstract: No abstract text available
Text: 2N1613 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1613 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE
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2N1613
2N1613
150mA,
150mA
500mA
20MHz
100kHz
23-April
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Untitled
Abstract: No abstract text available
Text: 2N1711 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1711 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE
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2N1711
2N1711
150mA,
150mA
500mA
20MHz
100kHz
23-April
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2N4410
Abstract: 2N4410 Transistor Transistor marking code S
Text: 2N4410 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4410 is a small signal NPN silicon transistor, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER
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2N4410
2N4410
20MHz
18-October
2N4410 Transistor
Transistor marking code S
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power transistor 2n3020
Abstract: 2N3019 and applications
Text: 2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: TA=25°C
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2N3019
2N3020
2N3019,
150mA,
150mA
500mA
20MHz
power transistor 2n3020
2N3019 and applications
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Untitled
Abstract: No abstract text available
Text: 2N3700 2N3701 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 are silicon NPN transistors designed for high current general purpose applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C unless otherwise noted
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2N3700
2N3701
2N3700
20MHz
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BC638
Abstract: BC638TA transistor bc638 BC637 BC638BU BC638TF BC638TFR Transistor Marking C3
Text: BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC637 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter Value Units -60 V VCER Collector-Emitter Voltage at RBE=1KΩ
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BC638
BC637
BC638
BC638TA
transistor bc638
BC637
BC638BU
BC638TF
BC638TFR
Transistor Marking C3
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BC636
Abstract: Transistor Marking C3 BC636TFR BC635 BC636BU BC636TA BC636TAR BC636TF transistor bc635
Text: BC636 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC635 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter Value Units -45 V VCER Collector-Emitter Voltage at RBE=1KΩ
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BC636
BC635
BC636
Transistor Marking C3
BC636TFR
BC635
BC636BU
BC636TA
BC636TAR
BC636TF
transistor bc635
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bc640
Abstract: transistor bc640 transistor c 458 BC640BU BC639 BC640TA BC640TAR BC640TF BC640TFR applications of Transistor BC640
Text: BC640 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC639 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter Value Units V VCER Collector-Emitter Voltage at RBE=1KΩ
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BC640
BC639
bc640
transistor bc640
transistor c 458
BC640BU
BC639
BC640TA
BC640TAR
BC640TF
BC640TFR
applications of Transistor BC640
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Untitled
Abstract: No abstract text available
Text: RB551V-30 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Low Turn-On Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
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RB551V-30
OD-323
OD-323,
MIL-STD-202,
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diode d2e
Abstract: No abstract text available
Text: RB491D SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Low Forward Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
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RB491D
OT-23,
MIL-STD-202,
diode d2e
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Untitled
Abstract: No abstract text available
Text: RB548W SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Low Forward Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
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RB548W
OT-523,
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: RB461F SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Low Forward Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
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RB461F
OT-323,
MIL-STD-202,
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1403
Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
Text: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.
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OCR Scan
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MMBD1401
OT-23
MMBD1404
UMBD1403
MMBD1405
b50113D
1403
R20 marking
M3325
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