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    GENERAL SEMICONDUCTOR MARKING SM Search Results

    GENERAL SEMICONDUCTOR MARKING SM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR MARKING SM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VISHAY MARKING CODE

    Abstract: Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S
    Text: PDD Marking www.vishay.com Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band


    Original     		PDF DO-204AL/DO-204AC/DO-201AD/GP20/1 5KE/P600ï P6KE22 GP15M 0621X 5KE15A 1N6275A SB340 VISHAY MARKING CODE Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S

    GENERAL SEMICONDUCTOR MARKING SJ SMA

    Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number


    Original     		PDF DO-204AL/DO-204AC/DO-201AD/GP20/1 5KE/P600 P6KE22 GP15M 0621X 5KE15A 1N6275A SB340 GENERAL SEMICONDUCTOR MARKING SJ SMA VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original     		PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    SBT3906UF

    Abstract: No abstract text available
    Text: SBT3906UF Semiconductor PNP Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance Ordering Information Type NO. Marking Package Code SBT3906UF


    Original     		PDF SBT3906UF OT-323F KSD-T5D014-000 SBT3906UF

    Untitled

    Abstract: No abstract text available
    Text: 2N2221A 2N2222A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER


    Original     		PDF 2N2221A 2N2222A 2N2221A 2N2222A 150mA,

    Untitled

    Abstract: No abstract text available
    Text: 2N2221A 2N2222A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER


    Original     		PDF 2N2221A 2N2222A 2N2221A 2N2222A 150mA,

    Untitled

    Abstract: No abstract text available
    Text: 2N2221 2N2222 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221 and 2N2222 are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER


    Original     		PDF 2N2221 2N2222 2N2221 2N2222 24-July 150mA

    2n2222

    Abstract: 2n2222 npn 2n2221 2N2221-2N2222 npn 2n2222 transistor 2n2222 npn transistor general purpose 2n2222 npn switching transistor power transistor 2n2222 2N2222 hfe
    Text: 2N2221 2N2222 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221, 2N2222 types are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER


    Original     		PDF 2N2221 2N2222 2N2221, 100MHz 100kHz 30-January 2n2222 npn 2N2221-2N2222 npn 2n2222 transistor 2n2222 npn transistor general purpose 2n2222 npn switching transistor power transistor 2n2222 2N2222 hfe

    2N1893

    Abstract: No abstract text available
    Text: 2N1893 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1893 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE


    Original     		PDF 2N1893 2N1893 150mA, 150mA 20MHz 100kHz 23-April

    2N4036

    Abstract: 2n4037 2N40* Central
    Text: 2N4036 2N4037 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4036, 2N4037 are epitaxial planar PNP Silicon Transistors designed for small signal, medium power, general purpose industrial applications. MARKING: FULL PART NUMBER


    Original     		PDF 2N4036 2N4037 2N4036, 150mA 500mA 20MHz 2N4036 2n4037 2N40* Central

    CW-75

    Abstract: 2N2222A marking code 2N2222A marking
    Text: 2N2221A 2N2222A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A types are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER


    Original     		PDF 2N2221A 2N2222A 150mA, CW-75 2N2222A marking code 2N2222A marking

    Untitled

    Abstract: No abstract text available
    Text: 2N1613 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1613 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE


    Original     		PDF 2N1613 2N1613 150mA, 150mA 500mA 20MHz 100kHz 23-April

    Untitled

    Abstract: No abstract text available
    Text: 2N1711 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1711 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE


    Original     		PDF 2N1711 2N1711 150mA, 150mA 500mA 20MHz 100kHz 23-April

    smd code marking HD

    Abstract: schottky 400v SMD Marking Code 10A MARKING CODE VF Smd marking code SMD MARKING CODE 50A GENERAL SEMICONDUCTOR MARKING smc 10A Schottky bridge marking code N CMSH1-100M
    Text: Discrete Semiconductor Sample Kit SMD Rectifier Central Semiconductor Sample Kits provide designers with the discrete semiconductor devices ideally suited for the latest design challenges. The SMD Rectifier Sample Kit includes a variety of medium power devices suitable for general purpose full-wave,


    Original     		PDF CBRHD-10 500mA CBD10 CBR1-D100S CBR1F-D040S 200ns CBR1U-D020S 5310M CMR5U-08 100ns smd code marking HD schottky 400v SMD Marking Code 10A MARKING CODE VF Smd marking code SMD MARKING CODE 50A GENERAL SEMICONDUCTOR MARKING smc 10A Schottky bridge marking code N CMSH1-100M

    CMR3-06

    Abstract: C302 C304 C306 c306 diode C310 CMR3-02 CMR3-04 CMR3-10 TR13
    Text: Central CMR3-02 CMR3-04 CMR3-06 CMR3-10 TM Semiconductor Corp. GENERAL PURPOSE RECTIFIER 3.0 AMP, 200 THRU 1000 VOLTS SMC CASE FEATURES: • LOW COST • SPECIAL SELECTIONS AVAILABLE • HIGH RELIABILITY • SUPERIOR LOT TO LOT CONSISTENCY • GLASS PASSIVATED CHIP


    Original     		PDF CMR3-02 CMR3-04 CMR3-06 CMR3-10 26-September CMR3-06 C302 C304 C306 c306 diode C310 CMR3-02 CMR3-04 CMR3-10 TR13

    TRANSISTOR SMD MARKING CODE

    Abstract: 4E smd diode smd code marking sot23 smd diode marking code transistor marking code SOT-23 marking code s1 SMD diode MOSFET marking smd on semiconductor marking code sot MOSFET SMD MARKING CODE TRANSISTOR SMD npn MARKING CODE
    Text: Discrete Semiconductor Sample Kit Low Power SMD Central Semiconductor Sample Kits provide designers with the discrete semiconductors ideally suited for the latest design challenges. The Low Power SMD Sample Kit includes a variety of diodes and MOSFETs suitable for general purpose


    Original     		PDF 100mA 200mA OD-323 CMDSH05-4 500mA OT-23 TRANSISTOR SMD MARKING CODE 4E smd diode smd code marking sot23 smd diode marking code transistor marking code SOT-23 marking code s1 SMD diode MOSFET marking smd on semiconductor marking code sot MOSFET SMD MARKING CODE TRANSISTOR SMD npn MARKING CODE

    JESD 201 class 1A

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes Diodes - TO-277A SMPC Package for Smartphone Chargers V10PN50 and V15PN50 50 V TMBS Rectifiers for Smartphone Chargers Feature Industry-Low VF of 10 A and 15 A KEY BENEFITS • High current density


    Original     		PDF O-277A V10PN50 V15PN50 VMN-PT0378-1308 91000TO JESD 201 class 1A

    BC846

    Abstract: BC846A BC847 BC847A BC848 BC848A BC849 BC849B BC856 BC859
    Text: BC846 thru BC849 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors NPN Mounting Pad Layout 0.031 (0.8) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) 0.035 (0.9) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 1 Pin Configuration 1 = Base


    Original     		PDF BC846 BC849 O-236AB OT-23) OT-23 E8/10K 30K/box BC846A BC847A BC846A BC847 BC847A BC848 BC848A BC849 BC849B BC856 BC859

    CMLT8099

    Abstract: No abstract text available
    Text: Central CMLT8099 SURFACE MOUNT PICOminiTM DUAL NPN SMALL SIGNAL SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT8099 consists of two individual, isolated 8099 NPN silicon transistors, manufactured by the epitaxial planar process and epoxy


    Original     		PDF CMLT8099 CMLT8099 OT-563 500mA 100mA, 100mA 100MHz 19-November

    HN1A01FU

    Abstract: No abstract text available
    Text: HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FU Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO =−50V, IC =−150mA (max) z High hFE: hFE = 120~400


    Original     		PDF HN1A01FU -150mA HN1A01FU

    HN2C01FU

    Abstract: No abstract text available
    Text: HN2C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FU Audio Frequency General Purpose Amplifier Applications Unit: mm z Small package (dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400


    Original     		PDF HN2C01FU 150mA HN2C01FU

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR t m FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at


    OCR Scan     		PDF FMB1020 300mA. 10OuA 100mA 150mA 200mA, 100MHz 10OuA, fmb1020

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR t m FMB3946 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful


    OCR Scan     		PDF FMB3946 100mA 100MHz 100MHz 10OuA, fmb3946 lwpPr23