B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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PDF
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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Original
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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PDF
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5007
Abstract: SRA2202 SRC1202 SUR551H
Text: SUR551H Semiconductor NPN/PNP epitaxial planar Silicon Transistor Description • General purpose transistor Features • Both SRC1202 chip and SRA2202 chip in SOT-353 package • With built-in bias resistors Ordering Information Type NO. Marking SUR551H 51H
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SUR551H
SRC1202
SRA2202
OT-353
OT-353
KST-5007-000
-10mA
-10mA,
5007
SUR551H
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PDF
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gi diode
Abstract: SOT-353 transistor sra2203 CHIP TRANSISTOR marking code GI 5007 src1203 SRA2203 SUR498H
Text: SUR498H Semiconductor NPN/PNP epitaxial planar Silicon Transistor Description • General purpose transistor Features • Both SRC1203 chip and SRA2203 chip in SOT-353 package • With built-in bias resistors Ordering Information Type NO. Marking Package Code
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SUR498H
SRC1203
SRA2203
OT-353
OT-353
KST-5007-000
-10mA
-10mA,
gi diode
SOT-353
transistor sra2203
CHIP TRANSISTOR
marking code GI
5007
SUR498H
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PDF
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SRA2207
Abstract: SRC1204 SUR496H
Text: SUR496H Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Description • General Purpose Transistor Features • Both SRC1204 chip and SRA2207 chip in SOT-353 package • With Built-in Bias Resistors Ordering Information Type NO. Marking SUR496H Package Code
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SUR496H
SRC1204
SRA2207
OT-353
OT-353
KST-5006-000
-10mA
-10mA,
SUR496H
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Group: Vishay Semiconductors / Diodes / May 2015 /FF-DD-003-2015 From: Henry Chi, Product Marketing Sr. Manager Tel: +886 2 2911 3861 ext. 6533 office E-mail: henry.chi@vishay.com Subject: Information Notice – Product Marking DESCRIPTION OF CHANGE: Addition of cathode band on SMPCxxA series Transzorb TVS devices
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/FF-DD-003-2015
SMPC10A-M3/86A
A-M3/86A
SMPC20A-M3/86A
A-M3/87A
SMPC11A-M3/86A
SMPC20A-t
NY11788
D-74072
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PDF
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Untitled
Abstract: No abstract text available
Text: | V > llC R O I\ J 16K M T5C 1601 X 1 SRAM 16K X 1 SRAM SRAM PIN ASSIGNMENT Top View • High speed: 8’ , 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option
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OCR Scan
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20-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE |V/|C=RON MT5LC512K8C3 512K X 8 SRAM 512Kx 8 SRAM WITH OUTPUT ENABLE • High speed: 20, 25, 35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3Vpower supply • Easy memory expansion with CE and OE options
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OCR Scan
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MT5LC512K8C3
512Kx
32-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT5LC1M4C3 1 MEG X 4 SRAM |V |IC = R O N 1 MEG X 4 SRAM WITH OUTPUT ENABLE FEATURES • High speed: 20,25, 35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply • Easy memory expansion with CE and OE options
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OCR Scan
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32-Pin
55utputs
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT5C1M4A1 1 MEG X 4 SRAM SRAM 1 MEG X 4 SRAM WITH OUTPUT ENABLE FEATURES • H igh speed: 20,25,35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply _ • Easy memory expansion with CE and OE options
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OCR Scan
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32-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE SRAM 512Kx 8 SRAM FEATURES • High speed: 20,25, 35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL compatible
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OCR Scan
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512Kx
32-Pin
MTSC512K8A1
MT5C512K8A1
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE SRAM 512Kx 8 SRAM WITH OUTPUT ENABLE FEATURES • High speed: 20,25,35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL compatible
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OCR Scan
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MT5C512K8A1
512Kx
32-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT5LC1M4C3 1 MEG X 4 SRAM M IC R O N 1 MEG X 4 SRAM WITH OUTPUT ENABLE • High speed: 20,25,35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply • Easy memory expansion with CE and OE options
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OCR Scan
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32-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY IN C SSE D b l U S M Ì 0 0 D 3 b lb lis • FIRN ADVANCE MT5LC512K8C3 512K X B SRAM M IC R O N 512Kx 8 SRAM WITH OUTPUT ENABLE FEATURES PIN ASSIGNMENT (Top View • High speed: 2 0,25,35 and 55ns • High-performance, low-power, CMOS double-metal
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OCR Scan
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MT5LC512K8C3
512Kx
MTCLC612K8C3
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PDF
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a5433
Abstract: No abstract text available
Text: ADVANCE SRAM 256Kx 16 SRAM WITH OUTPUT ENABLE FEATURES • High speed: 20,2 5 and 35ns • High-performance, low-power, CMOS double-metal process • Multiple center power and ground pins • Single +5V ±10% power supply_ • Easy memory expansion with CE and OE options
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OCR Scan
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MT5C256K16B2
256Kx
44-Pin
a5433
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PDF
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y1 marking code transistor
Abstract: marking Y1 transistor SOT-353 transistor marking y1 SOT-353 marking y1 SRA2205 SUR499H transistor sot353
Text: SUR499H Semiconductor Epitaxial Planar PNP Transistor Descriptions • General purpose application • Two SRA2205 chips in SOT-353 package Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process
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Original
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SUR499H
SRA2205
OT-353
OT-353
KST-5008-000
-10mA
y1 marking code transistor
marking Y1 transistor
SOT-353
transistor marking y1
SOT-353 marking y1
SUR499H
transistor sot353
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PDF
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FCAS20DN60BB
Abstract: SPM20BC Fairchild UL file IGBT fairchild ccd IGBT application note asymmetric bridge converter for srm
Text: FCAS20DN60BB Smart Power Module for SRM Features General Description • 600V-20A 2-phase asymmetric bridge IGBT converter for SRM drive including control ICs for gate driving and protection FCAS20DN60BB is an advanced smart power module for SRM drive that Fairchild has newly developed and designed to provide very compact and high performance SRM motor drives
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FCAS20DN60BB
00V-20A
FCAS20DN60BB
SPM20BC
Fairchild UL file IGBT
fairchild ccd
IGBT application note
asymmetric bridge converter for srm
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PDF
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Untitled
Abstract: No abstract text available
Text: 05172 SR70 Only One Name Means ProTek’Tion ultra low capacitance steering diode array Description The SR70 is an ultra low capacitance steering diode array. Designed for protection against Electrostatic Discharge ESD , Electrical Fast Transients (EFT) and secondary lightning threats, this device is ideal for use in high-speed signal
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OT-143
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PDF
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marking b7t
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b7E T> • b lllS M R OOOIbSO ÔT7 ■ MRN MICRON 64K SRAM MODULE X MT8S6432 32 SRAM MODULE 64K X 32 SRAM FEATURES High speed: 15*, 20,25,30 and 35ns High-performance, low-power CMOS process _ Single +5V +10% power supply Easy memory expansion with CE and OE functions
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OCR Scan
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MT8S6432
64-Pin
marking b7t
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PDF
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TC75W60FK
Abstract: TC75W60FU
Text: TC75W60FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC75W60FU, TC75W60FK Dual Operational Amplifier TC75W60FU Features • High slew rate • Single and dual power Supply operations are possible. : VDD = ±0.9 to 3.5 V or 1.8 to 7 V : SR VDD = 3 V = 5.1 V/ s (typ.)
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TC75W60FU/FK
TC75W60FU,
TC75W60FK
TC75W60FU
TC75W60FK
TC75W60FU
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PDF
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KST-J023-000
Abstract: Marking JW IC marking jw SRC1211 SUR541EF
Text: SUR541EF Semiconductor NPN Epitaxial Planar Silicon Transistor Description • Digital transistor Features • Two SRC1211 chips in SOT-563F package • With built-in bias resistors Ordering Information Type NO. SUR541EF Marking JW Package Code SOT-563F Outline Dimensions
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Original
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SUR541EF
SRC1211
OT-563F
OT-563F
KST-J023-000
KST-J023-000
Marking JW
IC marking jw
SUR541EF
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PDF
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Untitled
Abstract: No abstract text available
Text: SRA2211M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2211M
O-92M
KSR-I018-001
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PDF
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SRA2205
Abstract: SUR532H
Text: SUR532H Semiconductor Epitaxial Planar Type PNP Silicon Transistor Description • Digital transistor Features • Two SRA2205 chips in SOT-353 package • With built-in bias resistors Ordering Information Type NO. SUR532H Marking 32H Package Code SOT-353
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Original
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SUR532H
SRA2205
OT-353
OT-353
KST-5019-001
SUR532H
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PDF
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Untitled
Abstract: No abstract text available
Text: SRC1210M Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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Original
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SRC1210M
O-92M
KSR-I007-001
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PDF
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