Untitled
Abstract: No abstract text available
Text: FCP11N60/FCPF11N60 General Description Features SuperFET MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge
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FCP11N60/FCPF11N60
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bcore-an-008P
Abstract: BlueCore6 Selection of i2c eeproms for use with bluecore BC63C159A CS-112584-SP CS-116434-ANP CS-112584-SPP CS-116434-An bcore-an-066P JESD22-A224
Text: Device Features • ■ ■ ■ ■ ■ Single Chip Bluetooth v2.1 + EDR System Fully qualified Bluetooth v2.1 + EDR Full speed Bluetooth Operation with Piconet and Scatternet Support Best in Class Bluetooth Radio with +8dBm Transmit Power and -90dBm Receive Sensitivity
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-90dBm
16-bit
BC63C159A
2002/95/EC)
CS-114838-DSP2
bcore-an-008P
BlueCore6
Selection of i2c eeproms for use with bluecore
BC63C159A
CS-112584-SP
CS-116434-ANP
CS-112584-SPP
CS-116434-An
bcore-an-066P
JESD22-A224
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Untitled
Abstract: No abstract text available
Text: B5817WS/B5818WS/B5819WS Taiwan Semiconductor Small Signal Product SOD-323 20~40V/1A Schottky Diode FEATURES - Low Forward Voltage Drop - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant MECHANICAL DATA SOD-323 - Case: Bend lead SOD-323 package
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B5817WS/B5818WS/B5819WS
OD-323
OD-323
C/10s
B5817WS
B5818WS
B5819WS
S1404015
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Untitled
Abstract: No abstract text available
Text: B5817WS/B5818WS/B5819WS Taiwan Semiconductor Small Signal Product SOD-323 20~40V/1A Schottky Diode FEATURES - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Low Forward Voltage Drop - General purpose rectification application
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B5817WS/B5818WS/B5819WS
OD-323
OD-323
C/10s
278mgÂ
B5817WS
B5818WS
B5819WS
S1404015
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PDF
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-11555 Revision. 3 Product Standards Zener Diode DZ2J1300L DZ2J1300L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5 Excellent rising characteristics of zener current Iz
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TT4-EA-11555
DZ2J130ï
UL-94
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PDF
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-11798 Revision. 3 Product Standards Zener Diode DZ2S1300L DZ2S1300L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J130 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6 Excellent rising characteristics of zener current Iz
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TT4-EA-11798
DZ2S130ï
DZ2J130
UL-94
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Untitled
Abstract: No abstract text available
Text: SBS822 Ordering number : ENA1504 SANYO Semiconductors DATA SHEET SBS822 Low VF Schottky Barrier Diode 20V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).
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SBS822
ENA1504
A1504-3/3
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A1504
Abstract: SBS822 marking SJ
Text: SBS822 Ordering number : ENA1504 SANYO Semiconductors DATA SHEET SBS822 Low VF Schottky Barrier Diode 20V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).
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SBS822
ENA1504
A1504-3/3
A1504
SBS822
marking SJ
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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Untitled
Abstract: No abstract text available
Text: SBS822 Ordering number : ENA1504 SANYO Semiconductors DATA SHEET SBS822 Low VF Schottky Barrier Diode 20V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).
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SBS822
ENA1504
A1504-3/3
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Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes LNJ306G5URA Surface Mounting Chip LED S-J Type • Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 60 mW Forward current IF 20 mA Pulse forward current * IFP 60 mA
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LNJ306G5URA
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Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes LNJ806R58RX Ultra High Bright Surface Mounting Chip LED InGaAIP S-J Type • Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 50 mW Forward current IF 20 mA Pulse forward current *
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LNJ806R58RX
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Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes LNJ206R5RRX Surface Mounting Chip LED S-J Type • Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 60 mW Forward current IF 20 mA Pulse forward current * IFP 60 mA
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LNJ206R5RRX
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PDF
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F574
Abstract: No abstract text available
Text: ui -sj W A National éûk Semiconductor 54F/74F574 Octal D-Type Flip-Flop with TRI-STATE Outputs General Description Features The 'F574 is a high-speed, low power octal flip-flop with a buffered common Clock CP and a buffered common Out put Enable (OE). The information presented to the D inputs
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54F/74F574
F574
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV228 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 2 8 Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low rs : rs = 0.3O Typ. Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage
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1SV228
SC-59
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1 SV 217 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 7 CATV TUNING. U nit in mm • High Capacitance Ratio : C 2 V /C 2 5 V = 12.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. 1.25 • + 0.2 0. -
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1SV217
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PDF
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Untitled
Abstract: No abstract text available
Text: January 1988 Semiconductor & MM54HC113/MM74HC113 Dual J-K Flip-Flops with Preset General Description out compatible with the standard 54LS/74LS logic family. All inputs are protected from damage due to static dis charge by internal diode clamps to Mqc and ground.
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OCR Scan
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MM54HC113/MM74HC11
MM54HC113/MM74HC113
54HC/74HC
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PDF
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Untitled
Abstract: No abstract text available
Text: January 1988 Semiconductor MM54HC113/MM74HC113 Dual J-K Flip-Flops with Preset General Description out compatible with the standard 54LS/74LS logic family. All inputs are protected from damage due to static dis charge by internal diode clamps to V cc and ground.
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MM54HC113/MM74HC113
54LS/74LS
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PDF
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TRANSISTOR J 5804 NPN
Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Text: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV
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1N5615,
1N5616,
1N5617,
1N5618,
1N5619,
1N5620,
1N5767
1N5802
1N5802,
1N5804,
TRANSISTOR J 5804 NPN
TRANSISTOR J 5804
TRANSISTOR J 5803
j 5804 transistor
1N6621
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transzorb application note
Abstract: TRANSZORB transzorb symbol LCA05C LCA12C LCA15C LCA24C TVS diode line voltage Application Note
Text: SEMI INSTR/ POWER 5 hE Semiconductor ^ • Industries, Inc. FEATURES J> 30^0137 O G G ^ M 7 0L4 I T - 62-11 LOW CAPACITANCE DIODE ARRAY T ransZ o rb TVS LCA Series APPLICATION • 500 watts peak pulse power The LCDA TVS devices are de signed specifically for transient volt
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T-62-11
RS422/423
RS485
8/20ns)
T0137
MAX16
100ns
100US
transzorb application note
TRANSZORB
transzorb symbol
LCA05C
LCA12C
LCA15C
LCA24C
TVS diode line voltage Application Note
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PDF
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NA42
Abstract: No abstract text available
Text: 1SV303 TOSHIBA TENTATIVE TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 303 CATV TUNING • • • U nit in mm High Capacitance Ratio : C%sj! C2 5 V = 17.5 Typ. Low Series Resistance : rs = 1.05Q (Typ.) Useful for Small Size Tuner.
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1SV303
C2V/C25V
NA42
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 01ZA8.2 TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE 01 Z A 8 . 2 DIODES FOR PROTECTING AGAINST ESD Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost.
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01ZA8
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1SV302 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 0 2 CATV TUNING C%sj! C2 5 V = 17.5 • High Capacitance Ratio : • Low Series Resistance : rs = 1.05Q Typ. • Useful for Small Size Tuner. U nit in mm (Typ.)
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1SV302
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PDF
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U2Z12
Abstract: U2Z13 U2Z15 U2Z16 U2Z18 U2Z20 U2Z22
Text: T O S H IB A U2Z12~U2Z100 T O SHIBA ZENER DIODE SILICON DIFFUSED TYPE U2Z12-U2Z100 CONSTANT VOLTAGE REGULATION Unit in mm INDUSTRIAL USE TRANSIENT SUPPRESSORS NOISE LIMITTER CATHODE MARK 1 • Average Power Dissipation : P = 2W • Zener Voltage • Surface Mounting Plastic Mold Package
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U2Z12-U2Z100
U2Z12)
961001EAA2
U2Z51
U2Z68
U2Z75
U2Z82
U2Z100
961001EAA2'
U2Z12
U2Z13
U2Z15
U2Z16
U2Z18
U2Z20
U2Z22
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