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    GENERAL-PURPOSE STATIC RAM Search Results

    GENERAL-PURPOSE STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL-PURPOSE STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPC509

    Abstract: 0X000F
    Text: SECTION 7 STATIC RAM MODULE The static RAM SRAM module consists of a 28-Kbyte block of static RAM. The primary function of this module is to serve as fast (one-cycle access), general-purpose RAM for the MCU. The SRAM can be read or written as either bytes, half-words or


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    PDF 28-Kbyte MPC509 0x8007 MPC509 0X000F

    CXK5T16100TM

    Abstract: No abstract text available
    Text: CXK5T16100TM -12LLX 65536-word x 16-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits.


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    PDF CXK5T16100TM -12LLX 65536-word 16-bit 65536words 16-bits. 120ns 100ns

    Static Random Access Memory SRAM

    Abstract: F848 f840 F844 F84A F852 MC68F375 F85A
    Text: SECTION 11 STATIC RANDOM ACCESS MEMORY SRAM 11.1 Introduction This SRAM module is a fast access (two clocks) general purpose 8K (8,192 bytes) static RAM (SRAM) for the MCU and is accessed via the IMB3. In addition there is 2K (configured as four blocks of 512 bytes each) of patch static RAM. These modules are


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    PDF 512-byte 512byte MC68F375 Static Random Access Memory SRAM F848 f840 F844 F84A F852 MC68F375 F85A

    F844

    Abstract: Static Random Access Memory SRAM F848 power transistor array F840 F84A F852 MC68377 memory sram
    Text: SECTION 12 STATIC RANDOM ACCESS MEMORY SRAM 12.1 Introduction This SRAM module is a fast access (two clocks) general purpose 8 Kbytes (8,192 bytes) static RAM (SRAM) for the MCU and is accessed via the IMB3. In addition there is 2 Kbytes (configured as four blocks of 512 bytes each) of patch static RAM. These


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    PDF 512-byte 512byte MC68377 F844 Static Random Access Memory SRAM F848 power transistor array F840 F84A F852 MC68377 memory sram

    16550

    Abstract: IBM PC Connection circuit diagram S180 Z180 Z80180 Z80189 Z8L189 Z8S180 COM PORT MIMIC
    Text: Z80189/Z8L189 GENERAL -PURPOSE E MBEDDED CONTROLLERS Z80189/Z8L189 GENERAL-PURPOSE EMBEDDED CONTROLLERS FEATURES Part Z80189 Z8L189 • UART 16550 16550 I/O 24 24 Speed MHz 33 20 Fully Static Z180 MPU Core* – – – – – – – – – – ■


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    PDF Z80189/Z8L189 Z180TM 16-Bit 100-Pin Z80189. Z80189 16550 IBM PC Connection circuit diagram S180 Z180 Z80180 Z8L189 Z8S180 COM PORT MIMIC

    CDP1802 MICROPROCESSOR

    Abstract: CDP1826CE CDP1800 CDP1802 CDP1826C CDP-1800
    Text: CDP1826C CMOS 64-Word x 8-Bit Static RAM March 1997 Features Description • Ideal for Small, Low-Power RAM Memory Requirements in Microprocessor and Microcomputer Applications The CDP1826C is a general purpose, fully static, 64-word x 8-bit random-access memory, for use in CDP1800-series or


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    PDF CDP1826C 64-Word CDP1826C CDP1800-series CDP1802 MICROPROCESSOR CDP1826CE CDP1800 CDP1802 CDP-1800

    icc3

    Abstract: CXK5V16100TM
    Text: CXK5V16100TM -85LLX/10LLX 65536-word x 16-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5V16100TM is a general purpose high speed CMOS static RAM organized as 65536-words by 16-bits. Operating on a single 3.3V supply, this


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    PDF CXK5V16100TM -85LLX/10LLX 65536-word 16-bit 65536-words 16-bits. -85LLX -10LLX 100ns icc3

    CDP1800

    Abstract: CDP-1800 CDP1802 CDP1826C CDP1826CE 617A-3
    Text: CDP1826C S E M I C O N D U C T O R CMOS 64-Word x 8-Bit Static RAM March 1997 Features Description • Ideal for Small, Low-Power RAM Memory Requirements in Microprocessor and Microcomputer Applications The CDP1826C is a general purpose, fully static, 64-word x


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    PDF CDP1826C 64-Word CDP1826C CDP1800-series CDP1800 CDP-1800 CDP1802 CDP1826CE 617A-3

    SL1832

    Abstract: Z80 instruction set 180MPU 4x4 bit multipliers ev1 hints Z80180 S180 Z180 Z80189 Z8L189
    Text: P R E L I M I N A R Y Zilog Z80189/Z8L189 GENERAL -PURPOSE E MBEDDED CONTROLLERS PRELIMINARY PRODUCT SPECIFICATION Z80189/Z8L189 GENERAL-PURPOSE EMBEDDED CONTROLLERS FEATURES Part Z80189 Z8L189 • UART 16550 16550 I/O 24 24 Speed MHz 33 20 Fully Static Z180 MPU Core*


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    PDF Z80189/Z8L189 16-Bit Z180TM DS971890301 PS009901-0301 SL1832 Z80 instruction set 180MPU 4x4 bit multipliers ev1 hints Z80180 S180 Z180 Z80189 Z8L189

    IA-7

    Abstract: Z180 mpu S180 Z180 Z80180 Z80189 Z8L189 Z8S180
    Text: P R E L I M I N A R Y Zilog Z80189/Z8L189 GENERAL -PURPOSE E MBEDDED CONTROLLERS PRELIMINARY PRODUCT SPECIFICATION Z80189/Z8L189 GENERAL-PURPOSE EMBEDDED CONTROLLERS FEATURES Part Z80189 Z8L189 • UART 16550 16550 I/O 24 24 Speed MHz 33 20 Fully Static Z180 MPU Core*


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    PDF Z80189/Z8L189 Z180TM 16-Bit DS971890301 IA-7 Z180 mpu S180 Z180 Z80180 Z80189 Z8L189 Z8S180

    Static Random Access Memory SRAM

    Abstract: MPC555
    Text: SECTION 20 STATIC RANDOM ACCESS MEMORY SRAM The MPC555 contains two static random access memory (SRAM) modules: a 16Kbyte module and a 10-Kbyte module. The SRAM modules provide the microcontroller unit (MCU) with fast (one cycle access), general-purpose memory. The SRAM can


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    PDF MPC555 16Kbyte 10-Kbyte MPC555 Static Random Access Memory SRAM

    Static Random Access Memory SRAM

    Abstract: MPC555
    Text: SECTION 20 STATIC RANDOM ACCESS MEMORY SRAM The MPC555 contains two static random access memory (SRAM) modules: a 16Kbyte module and a 10-Kbyte module. The SRAM modules provide the microcontroller unit (MCU) with fast (one cycle access), general-purpose memory. The SRAM can


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    PDF MPC555 16Kbyte 10-Kbyte MPC555 Static Random Access Memory SRAM

    Static Random Access Memory SRAM

    Abstract: sram MPC555 MPC556 memory sram motorola 201
    Text: SECTION 20 STATIC RANDOM ACCESS MEMORY SRAM The MPC555 / MPC556 contains two static random access memory (SRAM) modules: a 16-Kbyte module and a 10-Kbyte module. The SRAM modules provide the microcontroller unit (MCU) with fast (one cycle access), general-purpose memory. The


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    PDF MPC555 MPC556 16-Kbyte 10-Kbyte MPC556 Static Random Access Memory SRAM sram memory sram motorola 201

    Untitled

    Abstract: No abstract text available
    Text: ,UJNV CXK5T16100TM -12LLX 65536-word x 16-bit High Speed CMOS Static RAM Prelim inary Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits. Special feature are low power consumption and high speed.


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    PDF CXK5T16100TM -12LLX 65536-word 16-bit 65536words 16-bits. 120ns 100ns

    Untitled

    Abstract: No abstract text available
    Text: CDP1823, CDP1823C 128-Word x 8-Bit LSI Static RAM March 1997 Features Description • Fast Access Time The CDP1823 and CDP1823C are 128-word by 8-bit CMOS SOS static random-access memories. These memories are compatible with general-purpose microprocessors. The two


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    PDF CDP1823, CDP1823C 128-Word CDP1823 CDP1823C 450ns 250ns

    cdp1833

    Abstract: CDP1823 CDP1823C CDP1823CD CDP1823CDX CDP1823CE CDP1823D CDP1823E EMMA2
    Text: CDP1823, CDP1823C 128-Word x 8-Bit LSI Static RAM March 1997 Features Description • Fast Access Time The CDP1823 and CDP1823C are 128-word by 8-bit CMOS SOS static random-access memories. These memories are compatible with general-purpose microprocessors. The two


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    PDF CDP1823, CDP1823C 128-Word 450ns 250ns CDP1823CE CDP1823E CDP1823CD CDP1823D CDP1823CDX cdp1833 CDP1823 CDP1823C EMMA2

    5 pin A13E

    Abstract: a13e ic
    Text: SONY I CXK5T161OOTM 65536-word x 16-bit High Speed CMOS Static RAM -1 0 L L X /1 2 L L X Preliminary Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits. Special feature are low power consumption and


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    PDF CXK5T161OOTM 65536-word 16-bit CXK5T16100TM 65536words 16-bits. -10LLX -12LLX -12LLX 5 pin A13E a13e ic

    c00f

    Abstract: No abstract text available
    Text: CXK58110OTM/YM •12LB SONY« 131072-word x 8-bit High Speed CMOS Static RAM Description CXK581100TM/YM is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. C X K 581100TM 32 pin TSO P Plastic C XK 58110OYM 32 pin TSO P (Plastic)


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    PDF CXK58110OTM/YM 581100TM 58110OYM 131072-word CXK581100TM/YM CXK581100TM: CXK581100YM: CXK581100TM CXK581 CXK581100YM c00f

    Untitled

    Abstract: No abstract text available
    Text: H A R R IS X CDP1826C Semiconductor CMOS 64-Word x 8-Bit Static RAM March 1997 Features Description • Ideal for Small, Low-Power RAM Mem ory Require­ ments in Microprocessor and Microcom puter Applica­ tions The CDP1826C is a general purpose, fully static, 64-word x


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    PDF CDP1826C 64-Word CDP1826C CDP1800-series CDP1800

    Untitled

    Abstract: No abstract text available
    Text: C X K 58110OTM/YM -12LB SONY 131072-word x 8-bit High Speed CMOS Static RAM Description CXK581100TM/YM is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. CXK581100TM 32 pin T SO P Plastic CXK581100YM 32 pin T SO P (Plastic)


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    PDF 58110OTM/YM -12LB 131072-word CXK581100TM/YM CXK581100TM CXK581100YM CXK581100TM: CXK581100YM: CXK581

    Untitled

    Abstract: No abstract text available
    Text: SONY. CXK581OOOP/M -10LU12LL715LL 10L712L715L 131072-word X 8-bit High Speed CMOS Static RAM D escription CXK581 OOOP/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low


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    PDF CXK581OOOP/M -10LU12LL715LL 131072-word CXK581 CXK581000P/M-10L/1OLL 100ns CXK581000P/M-12L/12LL 120ns CXK581000P/M-15L/15LL 150ns

    CXK58257AM

    Abstract: No abstract text available
    Text: CXK58257AP/AM -12LB SONY» 32768-word x 8-bit High Speed CMOS Static RAM D escription CXK58257AP/AM is a general purpose high speed CMOS static RAM organized as 32768 words by 8 bits. Operating on a single 2.7 to 5.5V supply, this asynchronous IC is suitable for high speed and low


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    PDF CXK58257AP/AM -12LB 32768-word XK58257AP XK58257AM 240ns 120ns CXK58257AP CXK58257AM CXK58257AM

    CXK5T16100TM

    Abstract: No abstract text available
    Text: SONY I CXK5T161OOTM -1 0 L L X /1 2 L L X 65536-word x 16-bit High Speed CMOS Static RAM Preliminary Description The CXK5T16100TM is a general purpose high speed C M O S static RAM organized as 65536words by 16-bits. Special feature are low power consumption and


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    PDF 65536-word 16-bit CXK5T16100TM 65536-words 16-bits. CXK5T161OOTM -10LLX/12LLX -10LLX -12LLX

    Untitled

    Abstract: No abstract text available
    Text: C XK581000P/M -12LB SONY. 131072-word x 8-bit High Speed CMOS Static RAM D escription The CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. Operating on a single 2.7 to 5.5V supply, this asynchronous IC is suitable for high speed and low


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    PDF XK581000P/M -12LB 131072-word CXK581000P/M 240ns 120ns CXK581OOOP/M CXK581000P 600mil CXK581000M