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    foto transistor

    Abstract: P1103 phototransistor 500-600 nm TRANSISTOR C 460 GEO06953 Q62702-P1103 Q62702-P1796 Q62702-P1805
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3400 1.1 1.0 0.3 0.2 Chip position 0.1 0.0 4.8 4.4 not connected 2.1 1.9 0.8 0.6 0.5 0.3 1.1 0.9 Active area 0.55 0.7 0.3 Collector 2.7 2.5 Emitter GEO06953 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


    Original     		PDF GEO06953 OHF00309 OHF00327 OHF02341 foto transistor P1103 phototransistor 500-600 nm TRANSISTOR C 460 GEO06953 Q62702-P1103 Q62702-P1796 Q62702-P1805

    P1103

    Abstract: GEO06953 Q62702-P1103 Q62702-P1796 Q62702-P1805
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3400 1.1 1.0 0.3 0.2 Chip position 0.1 0.0 4.8 4.4 not connected 2.1 1.9 0.8 0.6 0.5 0.3 1.1 0.9 Active area 0.55 0.7 0.3 Collector 2.7 2.5 Emitter GEO06953 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


    Original     		PDF GEO06953 OHF00309 OHF00327 OHF02341 P1103 GEO06953 Q62702-P1103 Q62702-P1796 Q62702-P1805

    Q62702-P1103

    Abstract: Q62702-P1796 Q62702-P1805 Q62702-P3605
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3400 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität • SMT-Bauform ohne Basisanschluß, geeignet für Vapor Phase-Löten und IR-Reflow-Löten


    Original     		PDF OHF00327 OHF02341 GEO06953 Q62702-P1103 Q62702-P1796 Q62702-P1805 Q62702-P3605