Germanium Power Diodes
Abstract: BD3 tunnel diode Germanium Power Devices
Text: Germanium Power Devices Corp. r— rr— r - - -— :- Specifications BACK DIODES BDl, 2, 3, 4, 5, 6 & 7 are germanium back diodes which make use of the quantum mechanical tunneling phenomenon, thereby attaining a very low forward voltage
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350mv)
Germanium Power Diodes
BD3 tunnel diode
Germanium Power Devices
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BKC Semiconductors
Abstract: BAT46 smd
Text: DO-35 Glass Schottky Diode BAT46 Applications Higher voltage and lower leakage. Low forward drop. More ESD protection. Ideal relacement for germanium diodes in instruments. Efficient portable systems battery isolator. Features DO-35 Glass Package Six Sigma quality
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DO-35
BAT46
002er'
DO-213AA)
300pS
DO-213AA
BKC Semiconductors
BAT46 smd
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1N60P
Abstract: 1N60 diode diode 1n60 DO-35 silicon Rectifier diodes germanium rectifier diode 1N60 1N60P,Germanium, DO-35
Text: 1N60, 1N60P GERMANIUM DIODES Features • Metal silicon junction, majority carrier conduction DO-35 GLASS · High current capability, Low forward voltage drop · Extremely low reverse current lR · Ultra speed switching characteristics 0.075(1.9) MAX. DIA.
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1N60P
DO-35
1N60P
1N60 diode
diode 1n60
DO-35 silicon Rectifier diodes
germanium rectifier diode
1N60
1N60P,Germanium, DO-35
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BKC Semiconductors
Abstract: BAT43 SMD D0213AA D0-213AA Germanium Schottky diode
Text: DO-35 Glass Schottky Diode BAT43 Applications Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CD ROMs and hard disk drives.
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DO-35
BAT43
DO-213AA)
300pSecs
OT-23
BAR43)
D0-213AA
01g41
BKC Semiconductors
BAT43 SMD
D0213AA
Germanium Schottky diode
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BKC Semiconductors
Abstract: DSAIH0002561
Text: DO-35 Glass Schottky Diode BAT43 Applications Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CD ROMs and hard disk drives.
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DO-35
BAT43
DO-213AA)
300pSecs
OT-23
BAR43)
DO-213AA
BKC Semiconductors
DSAIH0002561
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DSAIH00025313
Abstract: No abstract text available
Text: DO-35 Glass Applications n Schottk» Diode BAT42 J Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CO ROMs and hard disk drives.
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DO-35
BAT42
DO-213AA)
300jjSecs
DO-213AA
01g41
DSAIH00025313
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DSAIH0002561
Abstract: BAT46 smd
Text: DO-35 Glass Schottky Diode BAT46 Applications Higher voltage and lower leakage. Low forward drop. More ESD protection. Ideal relacement for germanium diodes in instruments. Features • • • • • • • • DO-35 Glass Package Six Sigma quality Humidity proof glass
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DO-35
BAT46
DO-213AA)
300pS
300pSecs
DO-213AA
DSAIH0002561
BAT46 smd
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BKC Semiconductors
Abstract: Germanium DO-35 DIODE germanium diodes forward drop DSAIH0002561
Text: Schottky Diode I BAT42 Applications DO-35 Glass Guard ring protected schottky barrier. Low forward drop.Excellent protection for M O S devices. Ideal replacem ent for germanium diodes, used in small fast mo tor applications such as CD ROMs and hard disc drives. Efficient portable sys
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BAT42
DO-35
Length25
DO-213AA
681-039S
BKC Semiconductors
Germanium DO-35 DIODE
germanium diodes forward drop
DSAIH0002561
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Untitled
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 1N268 Gold Bonded Germanium Diodes in DO-7 Package FEATURES Low forward voltage drop—low power consumption Thirty years of proven reliability—one million hours mean time between failures (MTBF)
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1N268
MIL-S-19500,
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diode 0a47
Abstract: DIODE OA91 OA95 diode OA90 diode oa47 diode DIODE OA90 OA91 diode OA1182 0a47 diode germanium oa95
Text: B K C INTERNATIONAL 30E D • 1 1 7 H 4 3 0000355 ? ■ x iiL lL H - d - . -pOl-OT i 6 Lake Street PO Box 1436 Lawrence. MA 01841 617)681-0392 (508) 681-0392 BK C International Electronics Inc. Gold Bond Germanium Diodes TYPE G1607 FEATURES Low forward voltage drop
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117T1Ã
G1607
300mA
MIL-S-19500,
diode 0a47
DIODE OA91
OA95 diode
OA90 diode
oa47 diode
DIODE OA90
OA91 diode
OA1182
0a47
diode germanium oa95
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TY 8004
Abstract: G1607 tolol
Text: B K C INTERNATIONAL ✓•o nx-t « i 3ÛE D ■ 117^03 Q0QQ322 7 ■ " T O I- 0 7 I M /. ? f - 1 ^ I. 6 Lake Street PO Box 1436 Lawrence. MA 0184! 617 681-0392 (508) 681-0392 BK C International Electronics Inc. Gold Bond Germanium Diodes type G1607 FEATURES Low forward voltage drop
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G1607
300mA
100UA
MIL-S-19500,
TY 8004
G1607
tolol
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Germanium Power Diodes
Abstract: T-75 A HIGH VOLTAGE DIODES Germanium power 490mV Germanium Power Devices G40S20 430mv germanium
Text: G Germanium Power Devices Corporation * Ge Schottky Rectifier D05 High Reverse Energy/Ultra-Low Vp G40S20 PRELIMINARY SPECIFICATIONS MAXIMUM RATINGS: IF avg Average forward current rectangular waveform 40 A IFM Peak rectified forward current 50%duty cycle
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G40S20
300usec
400mv
340mv
310mv
450mv
390mv
360mv
490mv
430mv
Germanium Power Diodes
T-75 A HIGH VOLTAGE DIODES
Germanium power
Germanium Power Devices
G40S20
germanium
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1N770
Abstract: 1N910 1N911 1N695 1N695A 1N771 1N771A 1N771B gold bonded germanium diode BKC International
Text: IITT^ÛB 0DQQ333 1 3QE D B K C INTERNATIONAL [ 1 4 BKC " International Electronics Inc. L .J X i T - O 3 .-0 7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE 1N695
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0DQQ333
1N695
500mA
25nded
MIL-S-19500,
1N770
1N910
1N911
1N695
1N695A
1N771
1N771A
1N771B
gold bonded germanium diode
BKC International
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n452 ak
Abstract: toho electronics inc 1N4537 1N454 germanium diode 0Q0017 N452 n314 1N277 1N278
Text: BKC IIT^ÔB 0000331 & • 'T-Ol -07 30E D I NTERNATI ONAL M <r 6 Lake Street PO Box 1436 Lawrence, M A USA 01841 BKC International Electronics Inc. L „ l Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE 1N277 Low forward voltage drop
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T-01-07
1N277
500mA
MIL-S-19500,
n452 ak
toho electronics inc
1N4537
1N454
germanium diode
0Q0017
N452
n314
1N277
1N278
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1N995
Abstract: germanium diodes forward drop 1n995 1n995 diode
Text: B K C BQE D INTERNATIONAL [ \ d BKC International \Electronics Inc. •as-07 IITTTÔB 000033b ? 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE 1N 995 Low forward voltage drop
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000033b
1N995
250mA
75ohms,
1N995
germanium diodes forward drop 1n995
1n995 diode
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Untitled
Abstract: No abstract text available
Text: Resolution and Accuracy of Cryogenic Temperature Measurements D. Scott Holmes and S. Scott Courts Lake Shore Cryotronics, Inc., Westerville, Ohio 43081-2399 A procedure is outlined and typical data provided for calculation of achievable resolutions and accuracies using commercially
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G60S15
Abstract: G60S10 Germanium power
Text: GERMANIUM POWER DEVICES 31E I • 3=147375 0000S48 S ■ E R M A N I U M PO W ER DEVICES CORP. Ge Schottky Rectifier High Reverse Energy/Ultra-Low Vp Preliminary Specifications DO-5 pkg Nov. ’90 Maximum Ratings: IF avg IFM IFSM VRWM T. JC IRRM Average Forward Current Rectangular W aveform . . 60 Amps
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0000S48
G60S15
G60S10
Germanium power
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D3E diode
Abstract: germanium diode gold bonded germanium diode 1N3110 "Germanium diode" 1N3287 1N949 117T 1N3125 1N3287W
Text: B K C INTERNATIONAL 30E D [•■Mi BKC International Electronics Inc. L .,« il X » ■ 0DD033S 5 ■ 1- 0 1-0~7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE
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1N949
500mA
MIL-S-19500,
D3E diode
germanium diode
gold bonded germanium diode
1N3110
"Germanium diode"
1N3287
1N949
117T
1N3125
1N3287W
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1N3483
Abstract: Germanium diode D3E diode 1N3469 gold bonded germanium diode 1N3470 1N34* diode 1N3592
Text: B K C INTERNATIONAL 30E D [•«Ml BKC International Electronics Inc. I-III V » ■ 117^03 GG D G 3 3 T 2. ■ -"pOI-O"/ 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 « TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES
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GGDD33T
1N3469
600mA
100uA
Cto85Â
MIL-S-19500,
1N3483
Germanium diode
D3E diode
1N3469
gold bonded germanium diode
1N3470
1N34* diode
1N3592
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germanium diode
Abstract: 1N4523 117T 1N3666 1N3666M1 1N3666M2 1N3769 1N3773 gold bonded germanium diode
Text: 3QE D B K C INTERNATIONAL EN§ IITTTÔB 0000340 •= ■ ¡ ■ ' ^ 0 3 - 0 7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 BKC International Electronics Inc, Telephone 617) 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE
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1N3666
500mA
500uAyâ
MIL-S-19500,
germanium diode
1N4523
117T
1N3666
1N3666M1
1N3666M2
1N3769
1N3773
gold bonded germanium diode
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2n2082
Abstract: 2N2152 2N2075 2N2076 2N2153 2N2156 2N3312 2N2079 2N2077 2N2078
Text: germanium power transistors PNP TO-36 I c max — 5 to 30A V c e o js u s j — 20 to 65V Ii f e VcEO(SUS) V ebo (Volts) (Volts) Type# @ Ic /V ce (Min-Max @ A /V ) VcEISAT) @ Ic / I b (V @ A /A ) V be @ Ic / V ce (V @ A /V ) IC EV Pd @ @ V cE (m A @ V )
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2N3311
2N3312
2N3313
2N33ff
2N3314
2N3315
1N5555
1N5555
1N5556
1N5557
2n2082
2N2152
2N2075
2N2076
2N2153
2N2156
2N2079
2N2077
2N2078
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Germanium Schottky diode
Abstract: CDSH-4 Germanium DO-35 DIODE 30V 200mA schottky barrier diode
Text: Data Sheet Central CDSH-2 CDSH-4 S em iconductor Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 SILICON SCHOTTKY BARRIER DIODE Manufacturers of World Class Discrete Semiconductors JEDEC DO-35 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CDSH Series types are Silicon Schottky Barrier Diodes designed for
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DO-35
200mA
200mA,
Germanium Schottky diode
CDSH-4
Germanium DO-35 DIODE
30V 200mA schottky barrier diode
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Untitled
Abstract: No abstract text available
Text: GENERAL PURPOSE DIODES, C1 CAN M inim um B reakdow n P a rt Num ber V . . . V C ontinuous laxlm um A ve ra g e I l l l l f i R everse Forw ard C u rre n t C u rre n t 1. <UA) Forward Voltage Drop T .« 2 5 « C T„»1 d o ° c v* (V olts) ta |m A ) V, (V o lts)
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OA47 germanium
Abstract: AA118 AA218 diode aa118 AAZ15 1N695 IN34A OA90 iN87 AA117
Text: B IC C INTERNATI ONAL 30E D • H 7 n f l 3 00003Q0 6 ■ 'T-01-0“7 Q erm anium d i o d e s B B B 3 Type AA117 AA118 AA121 M 123 M 130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 AAZ13 AAZ15 AAZ17 AA218 OA47 OA90 OA180 1N34A 1N55B 1N60 1N87 1N98A 1N100A 1N270 1N276
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AA117
AA118
AA121
AA130
AA143
AA144
AAY30
AAY32
AAY33
AAY42
OA47 germanium
AA218
diode aa118
AAZ15
1N695
IN34A
OA90
iN87
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