SGA1263Z
Abstract: SGA1263
Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain
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SGA1263Z
DCto4000MH
SGA1263Z
DCto4000MHz
OT-363
50GHz
DS111011
SGA1263
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MARKING HBT
Abstract: SGA-1263 SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor
Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
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SGA-1263
DCto4000MH
DCto4000MHz
OT-363
50GHz
DS090924
SGA-1263
MARKING HBT
SGA-1263Z
trace code marking RFMD
SGA1263
18 sot-363 rf power amplifier
InP HBT transistor
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SGA-1263
Abstract: SGA-1263Z BY 356
Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
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SGA-1263
DCto4000MH
DCto4000MHz
OT-363
50GHz
EDS-100935
SGA-1263
SGA-1263Z
BY 356
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trace code marking RFMD
Abstract: SGA-1263 SGA-1263Z
Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
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SGA-1263
DCto4000MH
DCto4000MHz
OT-363
50GHz
DS090924
SGA-1263
trace code marking RFMD
SGA-1263Z
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SGA-1263Z
Abstract: SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a SGA1263Z
Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain
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SGA1263Z
DCto4000MH
DCto4000MHz
OT-363
SGA1263Z
50GHz
DS100916
SGA-1263Z
SGA1263ZSQ
trace code marking RFMD
InP HBT transistor
PHEMT marking code a
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Untitled
Abstract: No abstract text available
Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain
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SGA1263Z
DCto4000MH
DCto4000MHz
OT-363
SGA1263Z
50GHz
DS111011
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Untitled
Abstract: No abstract text available
Text: Resolution and Accuracy of Cryogenic Temperature Measurements D. Scott Holmes and S. Scott Courts Lake Shore Cryotronics, Inc., Westerville, Ohio 43081-2399 A procedure is outlined and typical data provided for calculation of achievable resolutions and accuracies using commercially
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SGA-1163
Abstract: SGA-1163-TR1
Text: Preliminary SGA-1163 Product Description Sirenza Microdevices SGA-1163 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 6 GHz. This RFIC is a 2-stage design that provides high isolation of
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SGA-1163
SGA-1163
DC-6000
EDS-100934
SGA-1163-TR1
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EDS-100935
Abstract: SGA-1263
Text: Preliminary SGA-1263 Product Description Sirenza Microdevices SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. This RFIC is a 2-stage design that provides high isolation of
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SGA-1263
SGA-1263
DC-4000
EDS-100935
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Untitled
Abstract: No abstract text available
Text: SGA-1263 Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block SGA-1263(Z) Preliminary DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar
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SGA-1263
DCto4000MH
DCto4000MHz
OT-363
50GHz
EDS-100935
SGA-1263Z
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hp5082-2810
Abstract: YSI 44018 HP5082 2N3904 LM10 LT1034 varactor diode sample problems YSI-44018 Widlar 1N914
Text: Application Note 15 November 1985 Circuitry for Single Cell Operation Jim Williams Portable, battery-powered operation of electronic apparatus has become increasingly desirable. Medical, remote data acquisition, power monitoring and other applications are good candidates for battery operation. In some circumstances, due to space, power or reliability considerations,
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1017/LT1018
600mV
LT1017/LT1018
LT1004
LT1034
an15f
AN15-8
hp5082-2810
YSI 44018
HP5082
2N3904
LM10
varactor diode sample problems
YSI-44018
Widlar
1N914
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marking A12
Abstract: No abstract text available
Text: Preliminary Product Description SGA-1263 Stanford Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. DC-4000 MHz Silicon Germanium
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SGA-1263
SGA-1263
DC-4000
EDS-100935
marking A12
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SGA-1263
Abstract: Stanford Microdevices 4 ghz
Text: Preliminary Product Description SGA-1263 Stanford Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. DC-4000 MHz Silicon Germanium
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SGA-1263
SGA-1263
DC-4000
EDS-100935
Stanford Microdevices 4 ghz
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Stanford Microdevices 4 ghz
Abstract: SGA-1163 SGA-1163-TR1
Text: Preliminary Product Description SGA-1163 Stanford Microdevices’ SGA-1163 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 6 GHz. DC-6000 MHz Silicon Germanium
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SGA-1163
SGA-1163
DC-6000
EDS-100934
Stanford Microdevices 4 ghz
SGA-1163-TR1
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IC 7413
Abstract: NSL5027 equivalent Z340 LM340-XX LM324 DIL TTL 74137 transistor LM320K-15 transistor 7413 NSL5027 Germanium power diode
Text: LM340 Series Three Terminal Positive Regulators National Semiconductor Application Note 103 George Cleveland August 1980 LM340 Series Three Terminal Positive Regulators INTRODUCTION The LM340-XX are three terminal 1 0A positive voltage regulators with preset output voltages of 5 0V or 15V The
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LM340
LM340-XX
IC 7413
NSL5027 equivalent
Z340
LM324 DIL
TTL 74137
transistor LM320K-15
transistor 7413
NSL5027
Germanium power diode
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CQY78
Abstract: CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium
Text: General IR and Photodetector Information Appnote 37 1. Detectors Radiation-sensitive Components Charge Carrier Generation in a Photodiode Figure 1 shows the basic design of a planar silicon photo-diode with an abrupt pn transition. Due to the differing carrier concentrations, a field region free of mobile carriers, the space charge
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BPW33)
CQY78
CQY77
CQY78 IV
CQY77A
DIN5033
BPW33
germanium photodiode PIN
phototransistor 600 nm
solar cell transistor infrared
photodiode germanium
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"Audio Power Amplifiers"
Abstract: darlington transistor for audio power application Germanium Power Diodes thermal resistance TO metal package aluminum kovar darlington power transistor power led heat sink
Text: PACKAGE INFORMATION THERMAL DESIGN FOR PLASTIC ICs THERMAL DESIGN FOR PLASTIC INTEGRATED CIRCUITS Proper thermal design is essential for reliable operation of many electronic circuits. Under severe thermal stress, leakage currents increase, materials decompose, and components drift in value or fail.
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YSI 44018
Abstract: YSI-44018 hp5082-2810 0-10v ramp ic Germanium diode 0.2V varactor diode sample problems hp5082 1N4148 LM10 voltage reference IC LM10
Text: ' LU IL/M<_ ! •' TECHNOLOGY Application Note 15 November 1985 Circuitry for Single Cell Operation Jim Williams Portable, battery powered operation of electronic appara tus has become increasingly desirable. Medical, remote data acquisition, power monitoring and other applications
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LT1017/LT1018
600mV
YSI 44018
YSI-44018
hp5082-2810
0-10v ramp ic
Germanium diode 0.2V
varactor diode sample problems
hp5082
1N4148
LM10
voltage reference IC LM10
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kt420
Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS
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rca transistor manual
Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi conductor devices and circuits. It will be useful to engineers, service technicians, edu cators, students, radio amateurs, hobbyists, and others technically interested in transis
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esaki Diode
Abstract: No abstract text available
Text: E li OPTOELECTRONICS IMPROPER TESTING METHODS FOR LED DEVICES AN603 In any manufacturing operation it is essential that the materials used in the fabrication process meet the minimum quality specifications of the device under production. To that end, prudent manufacturers establish
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AN603
esaki Diode
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Untitled
Abstract: No abstract text available
Text: BOUMAR/UHITE TECHNOLOGY T o dY J ISbBfaTfl 0DG005D 4 T -58-11-13 m C u s t o m D e v i c e s , la t e . Applications The 2802 positive voltage regulator, and the 2803 negative voltage regulator are designed to power analog or d ig ita l circu its. H y b r iid F C ir c a itl
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0DG005D
200mA
10/if
IN4019
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GT123
Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT
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NPN110.
NKT103
NKT106
NKT109
2000n
2000n
NKT123
NKT129
2G395
GT123
2N2342
2SB123 transistor
AD166
ST615
2sc180
dts105
2N234
2N235
2N285
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UD1001
Abstract: FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
UD1001
FT4017
transistor A431
MA3232
CA3036
UC850
DM01B
DM02B
UC340
L0NA
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