oscillator pnp 800MHZ
Abstract: NTE160 "PNP Transistor" transistor germanium Germanium power
Text: NTE160 Germanium PNP Transistor RF–IF Amp, FM Mixer OSC Description: The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a preamplifier mixer and oscillator up to 900MHz. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
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NTE160
NTE160
900MHz.
100MHz
450kHz
800MHz
oscillator pnp 800MHZ
"PNP Transistor"
transistor germanium
Germanium power
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germanium mesa transistor pnp
Abstract: NTE126
Text: NTE126 Germanium Mesa Transistor, PNP, for High–Speed Switching Applications Maximum Ratings: Collector–Emitter Voltage, VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc
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NTE126
15Vdc
150mW
00MHz)
10mAdc,
100mAdc,
25mAdc)
germanium mesa transistor pnp
NTE126
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AF279
Abstract: tfk transistor germanium-pnp-mesa-hf-transistor AF279 transistor tfk 140 Germanium mesa AF 279 042PF
Text: Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: V orstufen bis 900 MHz Applications: Pre stages up to 900 MHz Besondere Merkmale: Features: • Passivierte O berfläche • • Leistungsverstärkung 16 dB • Power gain 16 dB
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AF280
Abstract: germanium-pnp-mesa-hf-transistor oszillator Germanium mesa AF 280 042PF
Text: Nicht für Neuentwicklungen Not for new developments AF 280 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Misch- und O szillatorstufen bis 900 MHz Applications: M ixer and oscilla to r stages up to 900 MHz Besondere Merkmale:
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AF239
Abstract: germanium-pnp-mesa-hf-transistor AF 239
Text: 'W Nicht für Neuentwicklungen Not for new developments AF 239 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixe r and o scilla to r stages up to 900 MHz
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AF 109 R
Abstract: AF109R af109 germanium-pnp-mesa-hf-transistor
Text: ¡fi Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: G eregelte Vorstufen bis 260 MHz Applications: C ontrolled pre-stages up to 260 MHz Besondere Merkmale: Features: • Leistungsverstärkung 16,5 dB • Power gain 16.5 dB • Rauschmaß < 4 ,8 dB
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AF109R
AF 109 R
AF109R
af109
germanium-pnp-mesa-hf-transistor
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AF239
Abstract: germanium-pnp-mesa-hf-transistor Tfk 239 900 mhz oscillator AF 239
Text: * AF 239 S 'W Nicht für Neuentwicklungen Not for new developments 4W Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixer and o scilla to r stages up to 900 MHz
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TFK U 111 B
Abstract: 6 TFK 106 tfk 106 AF106 tfk 518 tfk u 111 TFK AF TFK 111 tfk 325 germanium-pnp-mesa-hf-transistor
Text: Nicht für Neuentwicklungen Not for new developments AF 106 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 260 MHz Applications: Pre, m ixer and o scilla to r stages up to 260 MHz Besondere Merkmale:
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01mA-
TFK U 111 B
6 TFK 106
tfk 106
AF106
tfk 518
tfk u 111
TFK AF
TFK 111
tfk 325
germanium-pnp-mesa-hf-transistor
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pm4020
Abstract: AF279 p21b AF279S AF240 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor
Text: f 25C D • flS3SbOS 00DMQ7b 1 H S I E 6 PIMP Germanium RF Transistor - SIEMENS AKTIENGESELLSCHAF A F240 for m ixer and oscillator stages up to 9 0 0 M H z AF 2 4 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads
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OCR Scan
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23SbOS
AF240
Q60106-X240
-13J5Ã
TambS45Â
-CC80
y12bl
pm4020
AF279
p21b
AF279S
900 mhz germanium diode
Germanium
Q60106-X240
S400
d 1556 transistor
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PDF
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transistor bc 541
Abstract: TRANSISTOR BC 534 PNP transistor Siemens 14 S S 92 AF139 TRANSISTOR BC 534 Germanium power Germanium mesa
Text: 55C D • û23St.D5 OOQ405Ö T PNP Germanium RF Transistor -SIEMENS A F 139 - AKTIENGESELLSCHAF 31-07 for input stages, m ixer and oscillator stages up to 860 MHz AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.
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OOQ405Ö
Q60106-X139
135H--
AF139
transistor bc 541
TRANSISTOR BC 534 PNP
transistor Siemens 14 S S 92
AF139
TRANSISTOR BC 534
Germanium power
Germanium mesa
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AF 239 S
Abstract: AF 239 af239 Germanium power S 239 L siemens
Text: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads
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OCR Scan
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23SbQS
Q62701-F51
oro-20
F--05
AF239S
AF 239 S
AF 239
af239
Germanium power
S 239 L siemens
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transistor 2SC114
Abstract: transistor BD400 BD109 2SC114 transistor transistor t08 usaf516es047m 2SC114 2SD155 L transistor 2Sd154 usaf517es060m
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t * - k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
PT6905A
PT6905B
PT6905C
100msa
100m5a
MM2261
MM2262
MM2263
transistor 2SC114
transistor BD400
BD109
2SC114 transistor
transistor t08
usaf516es047m
2SC114
2SD155 L
transistor 2Sd154
usaf517es060m
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PDF
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AF239
Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A
Text: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.
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A23Sb05
AF239
Q60106-X239
T1-0221)
transistor h5c
AF 239
0406H
F239
Q60106-X239
WTV4
AAO-4A
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AF139
Abstract: OOQ405 mz 1540
Text: ESC D • flE35t.05 0004056 T B IS IE G t n PNP Germanium RF Transistor AF139 -SIEMENS AKTIENGESELLSCHAF - ~ T ~ 3 I~ 0 7 for input stages, mixer and oscillator stages up to 8 6 0 M H z AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads
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OOQ405Ã
AF139
Q60106-X139
200MHz-
A800MHZ-
AF139
10lHHz
OOQ405
mz 1540
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TIL78
Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
TIL78
photo transistor til78
K1202
phototransistor OCP71
photo TIL78
til78 phototransistor
2n318
2SK19GR
2SK19Y
C682A
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PDF
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BD264
Abstract: TIP27 BD109 S1050 BD263 BD264A BLY88 BLY92 S708 transistor BD400
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C
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TIP27
Abstract: 190n0 2N1384 2N866 2N907 transistor BD400 BD109 BD109-16 1743-0810 1843-3705
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C MAX. 1 hFE ! MIN NlAXl tae
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MP2144
Abstract: MP2145 MP2143A 2G222 2N1029 2SB236 transistor 2SB235 2N1315 XC141 2N3132
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT
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NPN110.
2N3633/52
ME8101
TIX895
1300M5A
1500MS
2500M5
2N2446
2N2379
3000MIA
MP2144
MP2145
MP2143A
2G222
2N1029
2SB236
transistor 2SB235
2N1315
XC141
2N3132
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PDF
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MD14
Abstract: usaf521es071m MD14 package 81T2 A249 A298 MT1070 usaf520es070 usaf521es071
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t - 40°c k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT
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NPN110.
USAF520ES070M
2N1508
50M5A
13On0
32On0
600di
2N1509
MD14
usaf521es071m
MD14 package
81T2
A249
A298
MT1070
usaf520es070
usaf521es071
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PDF
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transistor KSA
Abstract: AF109R
Text: ESC D • flEBShOS 0ÛÛ4G53 0 « S I E G A F 109 R PNP Germanium RF Transistor SIEMENS AKT IE Nû ES EL LSC H AF 04053 D - T - 3 /'0 ~ 7 for A G C input stages up to 260 MHz AF 109 R is a germanium PNP RF mesa transistor in TO 72 case 18 A 4 DIN 41876 .
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Q60106-X109-R1
Q004QS?
AF109R
transistor KSA
AF109R
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PDF
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D1302
Abstract: TIL78 d1302 transistor TIXS79 D1178 D1185 til78 phototransistor 2n318 D1202 DNX4
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT
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PDF
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BD264A
Abstract: 2N3836 2N5417 BD263 BSX86 ML101B SC1625
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT
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PDF
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2SC114
Abstract: 2SA647 2SC114 transistor usaf516es047m TRM7015 2N2180 MD14 package 81T2 A249 A298
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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OCR Scan
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NPN110.
PT6905A
PT6905B
PT6905C
100msa
100m5a
MM2261
MM2262
MM2263
2SC114
2SA647
2SC114 transistor
usaf516es047m
TRM7015
2N2180
MD14 package
81T2
A249
A298
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PDF
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C621
Abstract: SD5013 2N551 transistor c640 npn Transistors 2n551
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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