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    Mitsubishi Electric MGF1601B01

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    MGF1601

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF1601B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 6 0 1 B , m ed iu m -p o w er GaAs FET w ith an N channel S ch o ttk y gate, is designed fo r use in S to X band am plifiers and oscillators. Th e herm etically sealed m etalceram ic package assures m inim um parasitic losses, and


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