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    small signal GaAs FET

    Abstract: MGF1923 IL86
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> GF1923 TAPE CARRIER SM ALL SIGNAL GaAs FET DESCRIPTION The M G F 1 9 2 3 , low noise GaAs FET w ith an N-channel Schottky gate, is designed for use in S to Ku band ampliĀ­ fiers. The M G F 1 9 2 3 is mounted in the super 12 tape.


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    PDF MGF1923 12GHz GF1923 small signal GaAs FET MGF1923 IL86