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    GF1M GENERAL Search Results

    GF1M GENERAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    GF1M GENERAL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: GF1A-GF1M GF1A - GF1M Features • • • • Low forward voltage drop. High current capability. Easy pick and place. High surge current capability. SMA/DO-214AC COLOR BAND DENOTES CATHODE General Purpose Rectifiers Glass Passivated Absolute Maximum Ratings*


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    SMA/DO-214AC PDF

    Untitled

    Abstract: No abstract text available
    Text: Diodes SMD Type General Purpose Rectifiers GF1A - GF1M Features Low forward voltage drop. High current capability. Easy pick and place. High surge current capability. Maximum Ratings And Electrical Characteristics at 25 Parameter Symbol GF1A GF1B GF1D GF1G GF1J GF1K GF1M Unit


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    013mm PDF

    GF1A-GF1M

    Abstract: No abstract text available
    Text: GF1A-GF1M GF1A - GF1M Features • • • • Low forward voltage drop. High current capability. Easy pick and place. High surge current capability. SMA/DO-214AC COLOR BAND DENOTES CATHODE General Purpose Rectifiers Glass Passivated Absolute Maximum Ratings*


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    SMA/DO-214AC GF1A-GF1M PDF

    GF1G

    Abstract: gf1m DO-214BA GF1B Gk 151 DO-214BA JESD22-B102 J-STD-002 marking code gb GF1J vishay VISHAY MARKING GM
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop


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    MIL-S-19500 J-STD-020, 2002/95/EC 2002/96/EC DO-214BA 18-Jul-08 GF1G gf1m DO-214BA GF1B Gk 151 DO-214BA JESD22-B102 J-STD-002 marking code gb GF1J vishay VISHAY MARKING GM PDF

    marking code gb

    Abstract: DO-214BA JESD22-B102D J-STD-002B GF1J-E3
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop


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    MIL-S-19500 DO-214BA J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 marking code gb DO-214BA JESD22-B102D J-STD-002B GF1J-E3 PDF

    code 67a

    Abstract: No abstract text available
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier condition structure for high reliability • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop


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    MIL-S-19500 DO-214BA J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 code 67a PDF

    Untitled

    Abstract: No abstract text available
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop


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    MIL-S-19500 J-STD-020, 2002/95/EC 2002/96/EC DO-214BA, 08-Apr-05 PDF

    DO-214BA

    Abstract: J-STD-002
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Ideal for automated placement SUPERECTIFIER • Low forward voltage drop • Low leakage current


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    MIL-S-19500 J-STD-020, DO-214BA AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 DO-214BA J-STD-002 PDF

    Untitled

    Abstract: No abstract text available
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Ideal for automated placement SUPERECTIFIER • Low forward voltage drop • Low leakage current


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    MIL-S-19500 J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-214BA 2011/65/EU 2002/95/EC. 2011/65/EU. PDF

    GF1G

    Abstract: gf1m DO-214BA DO-214BA GENERAL SEMICONDUCTOR MARKING gm 76 JESD22-B102D J-STD-002B DO214BA DO214BAGF1 gf1b
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop


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    MIL-S-19500 DO-214BA J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 GF1G gf1m DO-214BA DO-214BA GENERAL SEMICONDUCTOR MARKING gm 76 JESD22-B102D J-STD-002B DO214BA DO214BAGF1 gf1b PDF

    Untitled

    Abstract: No abstract text available
    Text: GF1A, GF1B, GF1D, GF1G, GF1J, GF1K, GF1M www.vishay.com Vishay Semiconductors Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Ideal for automated placement SUPERECTIFIER • Low forward voltage drop


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    J-STD-020, AEC-Q101 DO-214BA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Ideal for automated placement • Low forward voltage drop • Low leakage current • High forward surge capability


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    MIL-S-19500 J-STD-020, DO-214BA AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 PDF

    gf1m general

    Abstract: GF1M
    Text: GF1A THRU GF1M SURFACE MOUNT GENERAL RECTIFIER Reverse Voltage - 50 to 1000 V Forward Current - 1 A Features • The plastic package carries UL flammability classification 94V-0 • For surface mounted applications • Low reverse leakage • Built-in strain relief, ideal for automated placement


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    DO-214AC) MIL-STD-750, gf1m general GF1M PDF

    marking CODE GA

    Abstract: DO-214BA General Semiconductor diode marking 49 marking code .gj marking code gj marking gk GF1B gf1m DO-214BA DEVICE MARKING CODE ga
    Text: GF1A thru GF1M Vishay Semiconductors formerly General Semiconductor Surface Mount Glass Passivated Rectifier DO-214BA GF1 Reverse Voltage 50 to 1000V Forward Current 1.0A * d e t n e t a P 0.066 (1.68) 0.040 (1.02) Mounting Pad Layout 0.066 MIN. (1.68 MIN.)


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    DO-214BA 50mVp-p 08-Jul-02 marking CODE GA DO-214BA General Semiconductor diode marking 49 marking code .gj marking code gj marking gk GF1B gf1m DO-214BA DEVICE MARKING CODE ga PDF

    GF1G

    Abstract: DO-214BA JESD22-B102D J-STD-002B
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent


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    DO-214BA MIL-S-19ed 08-Apr-05 GF1G DO-214BA JESD22-B102D J-STD-002B PDF

    GF1M

    Abstract: GF1J vishay
    Text: GF1A thru GF1M Vishay Semiconductors Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent


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    DO-214BA MIL-S-19500 J-STD-020C 04-Jul-05 GF1M GF1J vishay PDF

    GF1G

    Abstract: No abstract text available
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent


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    DO-214BA MIL-S-19500 J-STD-020C 10-Aug-05 GF1G PDF

    DO-204AC

    Abstract: gf1m DO-214BA DO204AC DO204AL GI816 DO-204AL RG02-20E RG02 RGP02 VR800
    Text: SUPERECTIFIERS 0.25 TO 3.0 AMPERES 50 VOLTS TO 4000 VOLTS INTRODUCTION TO SUPERECTIFIER General Semiconductor Superectifier is exactly that, a super rectifier. There is nothing else in the world like it. This is the most cost effective and highly reliable device on the market which is the result of a combination of patented technologies.


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    RGP15D GP20D RGP20D RGP25D 1N5624GP GP30D RGP30D RGP10G GP15G RGP15G DO-204AC gf1m DO-214BA DO204AC DO204AL GI816 DO-204AL RG02-20E RG02 RGP02 VR800 PDF

    1N4007 SMB

    Abstract: 1N4007 sma 1N4004 or 1N5404 1N4001 SMA 1N4005 SMB 1n4004 smb gf1m SMB 1n5404 diode data sheet 1N5391 1N5392
    Text: Discrete General Purpose Rectifiers Configuration VRRM V IF (AV) (A) VFM Max (V) trr Max (ns) IRM or IR Max (uA) 1N5391 Single 50 1.5 1.4 - 5 1N5392 Single 100 1.5 1.4 - 5 1N5393 Single 200 1.5 1.4 - 5 1N5394 Single 300 1.5 1.4 - 5 1N5395 Single 400 1.5


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    1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N4007 SMB 1N4007 sma 1N4004 or 1N5404 1N4001 SMA 1N4005 SMB 1n4004 smb gf1m SMB 1n5404 diode data sheet 1N5391 1N5392 PDF

    mini-melf with red band

    Abstract: GENERAL SEMICONDUCTOR diodes marking code rb
    Text: 1/2 MEDIUM POWER SINGLE DIODES RECTIFIER & SCHOTTKY BARRIER DIODES • RECTIFIER DIODES AVAILABLE UP TO 1,600V AND 1A • SCHOTTKY BARRIER DIODES AVAILABLE UP TO 60V AND 1A • SURGE OVERLOAD RATING EITHER 10A OR 30A • RECTIFIER DIODES ARE PART OF GENERAL SEMICONDUCTOR’S UNIQUE ‘SUPERECTIFIER’ RANGE:


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    EGL41F EGL41G mini-melf with red band GENERAL SEMICONDUCTOR diodes marking code rb PDF

    TRANSISTOR SMD 58W

    Abstract: smd 0806 resistor footprint DO214BA L6585 TRANSISTOR SMD 58W 87 APPLICATIONS OF IC L6585D Electronic ballast 2x36 2X58W 58w electronic ballast dual 1N4148 SMD cylindrical PACKAGE
    Text: AN2771 Application note 2x58 W/T8 or 2x36 W/T8 ballast demonstration board driven by L6585D Introduction This application note describes a demonstration board able to drive 2x58 W linear T8 fluorescent tubes. In addition, the modifications needed to adapt the same board for 2x36 W


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    AN2771 L6585D L6585D TRANSISTOR SMD 58W smd 0806 resistor footprint DO214BA L6585 TRANSISTOR SMD 58W 87 APPLICATIONS OF IC L6585D Electronic ballast 2x36 2X58W 58w electronic ballast dual 1N4148 SMD cylindrical PACKAGE PDF

    general semiconductor marking code GF

    Abstract: F1K marking DO-214BA
    Text: GF1ATHRU GF1M SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere DO-214BA r FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Ideal for surface mount automotive applications


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    DO-214BA MIL-S-19500 general semiconductor marking code GF F1K marking DO-214BA PDF

    Untitled

    Abstract: No abstract text available
    Text: G F1A T H RU GF1M G LA SS PASSIVATED SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES ♦ Plastic package has Undeiwriters Laboratory Flammability Classification 94 V-0 D O -214B A ♦ Id eal for surface m ounted autom otive ap plica­


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    -214B PDF

    DO-214BA EG

    Abstract: SMC 2060 GF1B DO-214 DO-214 ssi DO-214 melf DO214BA DO-214BA
    Text: SURFACE MOUNT SUPERECTIFIERS Surface Mount Superectifiers Features: ♦ H igh Tem p eratu re M etallu rg ically B o n d ed ♦ P lastic P a c k a g e h a s Underw riters Laboratory Flam m ab ility Classification 9 4 V -0 ♦ G lass P a ss ivated Junction ♦ C a p a b le o f m eeting E nviro nm ental S tan dards o f M IL -S -1 9 5 0 0


    OCR Scan
    1N6478-1N6484. GL41A-GL41Y. RGL41A-RGL41M. EGL41A-EGL41G. GL34A-GL34J. MELF/DO-213AA MELFIDO-213AA MELFIDO-213AB DO-214BA EG SMC 2060 GF1B DO-214 DO-214 ssi DO-214 melf DO214BA DO-214BA PDF