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    M52777SP

    Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
    Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30


    OCR Scan     		PDF 2SA1115 2SA1235 2SA1235A 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 M52777SP M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p

    InGaAs HEMT mitsubishi

    Abstract: MGF4714
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> GF4714AP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT | DESCRIPTION The M G F 4 7 1 4 A P lo w -n o is e H E M T H ig h Electron M o bili­ ty Transistor is designed fo r use in X band am plifiers. The plastic m old package offer high cost perform ance,


    OCR Scan     		PDF MGF4714AP MGF4714AP InGaAs HEMT mitsubishi MGF4714

    MGF4714AP

    Abstract: FET 748 low noise x band hemt transistor 251C
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> o q iv ö ö ? h&& GF4714AP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCR IPTIO N The M G F 4 7 1 4 A P lo w -n o is e H E M T H ig h Electron M o bili­ ty Transistor is designed fo r use in X band am plifiers. Th e plastic m old' package o ffer high cost perform ance,


    OCR Scan     		PDF MGF4714AP MGF4714AP GF4714AP FET 748 low noise x band hemt transistor 251C