SMD marking code GEM
Abstract: bfm smd code marking GHM SMD BFE smd diode SMD bey SMD marking code bfk smd diode code Bek smd marking BHp bfg smd smd marking ggd
Text: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15C5V0-G Thru TV15C171-G Working Peak Reverse Voltage: 5.0 -170 Volts Power Dissipation: 1500Watts RoHS Device Features -Ideally for surface mount applications. SMC/DO-214AB -Easy pick and place. -Plastic package has Underwriters Lab.
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TV15C5V0-G
TV15C171-G
1500Watts
SMC/DO-214AB
DO-214AB
TV15C151J
TV15C161K
TV15C161J
TV15C171K
TV15C171J
SMD marking code GEM
bfm smd code marking
GHM SMD
BFE smd diode
SMD bey
SMD marking code bfk
smd diode code Bek
smd marking BHp
bfg smd
smd marking ggd
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SMD marking code GEM
Abstract: bdl 494 BFE smd diode GHM SMD BHW MARKING CODE smd marking BHp 938 GFM smd code marking 777 BEV smd MARKING smd marking ggd
Text: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15C5V0-G Thru. TV15C441-G Working Peak Reverse Voltage: 5.0 - 440 Volts Power Dissipation: 1500Watts RoHS Device Features -Ideally for surface mount applications. SMC/DO-214AB -Easy pick and place. -Plastic package has Underwriters Lab.
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TV15C5V0-G
TV15C441-G
1500Watts
SMC/DO-214AB
DO-214AB
TV15B301J
TV15B351J
TV15B401J
TV15B441J
QW-BTV03
SMD marking code GEM
bdl 494
BFE smd diode
GHM SMD
BHW MARKING CODE
smd marking BHp
938 GFM
smd code marking 777
BEV smd MARKING
smd marking ggd
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BHN* marking smc
Abstract: No abstract text available
Text: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15C5V0-HF Thru. TV15C441-HF Working Peak Reverse Voltage: 5.0 - 440 Volts Power Dissipation: 1500Watts RoHS Device Halogen free Features -Glass passivated chip. -1500 W peak pulse power capability with a
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TV15C5V0-HF
TV15C441-HF
1500Watts
SMC/DO-214AB
DO-214AB/SMC
QW-JTV05
DO-214AB
DO-214AB
BHN* marking smc
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SMD marking code GEM
Abstract: bfm smd code marking BEV smd MARKING bdp 286 SMD marking code bfk SMD BHD D2 BFW 100A smd marking BJk BHD D2 SMD DEVICE smd marking BFX
Text: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15C5V0-G Thru. TV15C441-G Working Peak Reverse Voltage: 5.0 - 440 Volts Power Dissipation: 1500Watts RoHS Device Features -Ideally for surface mount applications. SMC/DO-214AB -Easy pick and place. 0.280 7.02
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TV15C5V0-G
TV15C441-G
1500Watts
SMC/DO-214AB
DO-214AB
MIL-STD-750,
Cathode00
QW-BTV03
DO-214AB
SMD marking code GEM
bfm smd code marking
BEV smd MARKING
bdp 286
SMD marking code bfk
SMD BHD D2
BFW 100A
smd marking BJk
BHD D2 SMD DEVICE
smd marking BFX
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Untitled
Abstract: No abstract text available
Text: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15C5V0-G Thru. TV15C441-G Working Peak Reverse Voltage: 5.0 - 440 Volts Power Dissipation: 1500Watts RoHS Device Features -Glass passivated chip. -1500 W peak pulse power capability with a 10/1000µs waveform, repetitive rate
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TV15C5V0-G
TV15C441-G
1500Watts
SMC/DO-214AB
DO-214AB/SMC
MIL-STD-750,
QW-BTV03
DO-214AB
DO-214AB
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BUK856-400IZ
Abstract: TP500
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope suitable for surface mount applications. It is intended for
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OT404
BUK866-400
BUK856-400IZ
TP500
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ultrafast igbt
Abstract: 50mt060ulstapbf GC smd diode 94540
Text: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996
2002/95/EC
18-Jul-08
ultrafast igbt
50mt060ulstapbf
GC smd diode
94540
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Untitled
Abstract: No abstract text available
Text: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse RoHS COMPLIANT • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996)
18-Jul-08
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gFE smd diode
Abstract: 50MT060ULSTAPBF
Text: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse RoHS COMPLIANT • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996)
18-Jul-08
gFE smd diode
50MT060ULSTAPBF
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Untitled
Abstract: No abstract text available
Text: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: 05406 SMCJ5.0C & SMCJ36A Only One Name Means ProTek’Tion 1500 WATT TVS COMPONENT APPLICATIONS • Power Supply • AC/DC Applications • Telecom DO-214AB PACKAGE FEATURES MECHANICAL CHARACTERISTICS • Compatible with IEC 61000-4-2 ESD : Level 4 - Air 15kV, Contact 8kV
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SMCJ36A
DO-214AB
5/50ns
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Untitled
Abstract: No abstract text available
Text: 05406 SMCJ5.0C & SMCJ36A Only One Name Means ProTek’Tion 1500 WATT TVS COMPONENT APPLICATIONS • Power Supply • AC/DC Applications • Telecom DO-214AB PACKAGE FEATURES MECHANICAL CHARACTERISTICS • IEC Compatibility 61000-4-2 ESD • IEC Compatibility 61000-4-4 (EFT)
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SMCJ36A
DO-214AB
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GC 72 smd diode
Abstract: No abstract text available
Text: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996
2002/95/EC
11-Mar-11
GC 72 smd diode
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GC 72 smd diode
Abstract: No abstract text available
Text: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
GC 72 smd diode
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40MT120UHAPBF
Abstract: ultrafast igbt 40MT120UHAP
Text: 40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Ultrafast NPT IGBT , 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • Square RBSOA
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40MT120UHAPbF,
40MT120UHTAPbF
E78996
2002/95/EC
18-Jul-08
40MT120UHAPBF
ultrafast igbt
40MT120UHAP
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40MT120UHAPBF
Abstract: 250 uH
Text: 40MT120UHAPbF/40MT120UHTAPbF Vishay High Power Products "Half-Bridge" IGBT MTP Ultrafast NPT IGBT , 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology Pb-free • Positive VCE(on) temperature coefficient Available RoHS* • 10 µs short circuit capability
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40MT120UHAPbF/40MT120UHTAPbF
18-Jul-08
40MT120UHAPBF
250 uH
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DIODE SMD GEM
Abstract: 232 GFP smd diode
Text: 05406 SMCJ SERIES Only One Name Means ProTek’Tion 1500 WATT TVS COMPONENT APPLICATIONS • Power Supply • AC/DC Applications • Telecom DO-214AB PACKAGE FEATURES MECHANICAL CHARACTERISTICS • UL File Recognition #E333727 • Compatible with IEC 61000-4-2 ESD : Level 4 - Air 15kV, Contact 8kV
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DO-214AB
E333727
5/50ns
DIODE SMD GEM
232 GFP smd diode
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10s100
Abstract: No abstract text available
Text: 40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Ultrafast NPT IGBT , 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • Square RBSOA
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40MT120UHAPbF,
40MT120UHTAPbF
E78996
2002/95/EC
11-Mar-11
10s100
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Untitled
Abstract: No abstract text available
Text: I Z II X Y S HiPerFAST IGBT with Diode V.CES IXGH 30N60BD1 IXGT 30N60BD1 600 60 1.8 C25 CE sat V A V 100 ns tfi(typ) Preliminary data sheet Maximum Ratings Symbol TestC onditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i
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OCR Scan
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30N60BD1
O-268
O-247
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BUZ102
Abstract: smd transistor py
Text: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dvfdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs BUZ102 50 V b 42 A flbston Package Ordering Code
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O-220
BUZ102
C67078-S1351-A2
BUZ102
smd transistor py
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Untitled
Abstract: No abstract text available
Text: SPD 07N20 In fin e o n technologies Preliminary Data SIPMOS Power Transistor Product Summary Features Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated V 200 Drain source voltage • N channel ^ D S o n
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07N20
67040-S
112-A
S35bQ5
SQT-89
B535bQ5
D13377Ã
B235bG5
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smd diode code b54
Abstract: smd transistor c015 BUZ101S E3045 Q67040-S4013-A2 smd code book 71ss TRANSISTOR SMD MARKING CODE c015 01333LA
Text: BUZ101S Infineon ta c h n ol o g ¡ u m p f ° v c d Ro8'°”’ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance R0S on • Avalanche rated Continuous drain current
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BUZ101S
P-T0220-3-1
Q67040-S4013-A2
E3045A
P-T0263-3-2
Q67040-S4013-A6
E3045
smd diode code b54
smd transistor c015
smd code book
71ss
TRANSISTOR SMD MARKING CODE c015
01333LA
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18p06p
Abstract: No abstract text available
Text: SPP 18P06P SPB 18P06P Infineon technologies Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current
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18P06P
VPT05I5Ã
SPP18P06P
P-T0220-3-1
Q67040-S4182
SPB18P06P
P-T0263-3-2
Q67040-S4191
SPP16P06P
18p06p
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kd smd transistor
Abstract: smd transistor wc LG Philips LM 300 W 01
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level Insulated gate bipolar power transistor In a plastic envelope
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BUK866-400
kd smd transistor
smd transistor wc
LG Philips LM 300 W 01
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