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    Untitled

    Abstract: No abstract text available
    Text: X BAND INTERNALLY MATCHED GaAs FET MGFXxxVxxxx Series T yp ical Characteristics Type PldB dBm Gtp (dB> f (GHz) M G FX33V9095 M GFX3BV9500 : M GFX36V0005 M GFX3SV0610 , MGFX3CV0717 ^ M GFX35V1722 ; M GFX38V9095 : M G FX38Vi»00 M GFX38V0005 ' <W IGFXi3 ilV 0Si0


    OCR Scan     		PDF FX33V9095 GFX3BV9500 GFX36V0005 GFX3SV0610 MGFX3CV0717 GFX35V1722 GFX38V9095 FX38Vi GFX38V0005 GFX38V1722

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> QQ1ÖQEM 034 “ 1 1 . 7 - 12.2G H z BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 5 V 1 7 2 2 is an internally impedance matched GaAs power F E T especially designed fo r use in 11.7 — 12.2 G H z band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF