Untitled
Abstract: No abstract text available
Text: SKM 75GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 MG N8 D8 .O 2 QGJ N8 D8ST .03+ 2 MGN8A * 5(+ %41(/<-+( +=(0-?-(F SEMITRANS 2 Trench IGBT Modules QHJJ 7 RJ E .0 2 RJ N8 GG E QJJ E V MJ 7 QJ Z+ .0 2 MG N8 RJ E .0 2 RJ N8 GG E QJJ E
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75GB176D
11Typ.
12Typ.
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ERO KC
Abstract: y526 c5 IPH HK 0f
Text: <://3: ?=@=5EFC9 <=;< BAH9C C9>5I :OKZ[XOY ` ,IQ B?CABNt kohq GG ` kpw MQCN=BCHA =;J;<CFCNS ` oE6 >C?F?=NLC= MNL?HANB b<?NQ?H =ICF ;H> =IHN;=NMc ` yL?J;A? >CMN;H=?t kjGG ` -?NCHA 6z{ jqjjf jpmk L?CH@IL=? CHMOF;NCIH ` 0LI>O=N CH ;=IL>;H=? NI *{y pjmmogk ;P;CF;<F?
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B13B
Abstract: No abstract text available
Text: 864/,D AC2<9=91BC@5 A97=1; @5;1F 6KGWXUKV ` :eW ^c_f_]nlc] mnl_hanb 0\_nq_h ]icf [h^ ]ihn[]nm1 ` Tola_ qcnbmn[h^ pifn[a_ oj ni =777WCE3 g_nm HEE Q[ln =? [h^ U_f_]il^c[ ` Nch5 ]l_j[a_ cm 95<gg 0\_nq_h ]icf [h^ ]ihn[]n13 Nch5 ]f_[l[h]_ cm 957gg 0\_nq_h ]icf [h^ ]ihn[]n1
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777WCE3
957gg
9AB93A
B13B
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chn 935
Abstract: chn 734 chn 637 chn 539 chn 737 chn 537 R/transistor chn 935 CQC57556556 TISO69556 chn 53 b
Text: 20.}~ .JRC278F/ :<,5363+;<9/ :316+4 9/4+? 0DANOLDM V M[r37A mqcn]bcha ][j[\cfcns V Hcab m_hmcncp_? 6:5gW V 6 Filg C ]ih`caol[ncih Fcf_ Ni3?E6889=6 V W[mb ncabn nsj_ [p[cf[\f_ V Ehpclihg_hn[f `lc_h^fs jli^o]n .RiHS ]igjfc[hn/ V Oonfch_ Dcg_hmcihm? .673: r <3: r 6535/ gg
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JRC278F/
E6889
CQC57556556
755gW/
85VDC
855OPS4gch3/
85OPS4gch3/
chn 935
chn 734
chn 637
chn 539
chn 737
chn 537
R/transistor chn 935
TISO69556
chn 53 b
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gg 7a
Abstract: KJE6
Text: <://3: ?=@=5EFC9 <=;< BAH9C C9>5I :OKZ[XOY c ,IQ B?CABNt kohq GG c kpw MQCN=BCHA =;J;<CFCNS c oE6 >C?F?=NLC= MNL?HANB b<?NQ?H =ICF ;H> =IHN;=NMc c yL?J;A? >CMN;H=?t kjGG c -?NCHA 6z{ jqjjf jpmk L?CH@IL=? CHMOF;NCIH c 0LI>O=N CH ;=IL>;H=? NI *{y pjmmogk ;P;CF;<F?
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Untitled
Abstract: No abstract text available
Text: SKM 300GB063D &, V RF WE@ + 89= .-9/57=9 =*9,7A79; Absolute Maximum Ratings Symbol Conditions IGBT DECS &X V RF WE 1E &X V PFG WE ZGG D [GG M &,6=9 V ¥G WE IGG M ZGG M ` RG D PG d= &,6=9 V RF WE RFG M &,6=9 V eG WE P¥G M ZGG M &X V PFG WE PZGG M &, V RF WE
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300GB063D
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Untitled
Abstract: No abstract text available
Text: I n s p i r i n gg r e e np e r f o r ma n c ewi t h S a ms u n gDDR3Me mo r y Hi ghper f or mance,ener gyef f i ci entmemor y Sams ungSemi conduct orEur ope,2009 Dual -andmul t i cor eCPUsf ormul t i t aski ngoper at i ons,64bi toper at i ng syst emsandcomput
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bmx lcd
Abstract: lcd pm 128 bl 15-Stage
Text: SHARP SM3903 SM3903 4-Bit Single-Chip Microcomputer LCD Driver and Remote Control PIN CONNECTIONS 60-PIN QFP TOP VIEW function, carrier output circuit for remote control, ROM, RAM, 15-stage divider. Provided with 132 wcBwüocOiOwÆxixx 5 5 w Hg9|g8| 57|gg|5lH^gagi|gg|49|4gi«iS6|
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SM3903
SM3903
15-stage
60-PIN
bmx lcd
lcd pm 128 bl
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LF158A
Abstract: LF158 lf157h 12 volt dc to 220 volt ac inverter SCHEMATIC LF356BM LF356N ST LF155A
Text: LF155/LF156/LF157 gg National 4LM Semiconductor LF155/LF156/LF157 Series Monolithic JFET Input Operational Amplifiers General Description These are the first monolithic JFET Input operational ampli fiers to Incorporate well matched, high voltage JFETs on the
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LF155/LF156/LF157
LF155/LF156/LF157
LF156
LF155
LF158A
LF158
lf157h
12 volt dc to 220 volt ac inverter SCHEMATIC
LF356BM
LF356N ST
LF155A
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WY smd transistor
Abstract: No abstract text available
Text: fl235bD5 SIEMENS GG^^ßDÖ TÔT • PROFETO BTS 442 E2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection • Current limitation • Short-circuit protection
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fl235bD5
O-22QAB/5
O-220AB/5,
E3043
Q67060-S6206-A2
E3043
Q67060-S6206-A3
O-22QAB/5,
E3062
BTS442E2
WY smd transistor
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dls1u
Abstract: D012-W PCF82C200T PCA82C200PN PCA82C200T Transistor MJE 5331 82C200 PCA82C200 PCA82C200P PCA82C200TD
Text: Philip* Semiconductors Microcontroller Product« gg bbS3SH4 DDTSTfiT 547 • SIC 3 Stand-alone CA N-controller 82C 200 NAPC/PHILIPS SEMICOND fcj^E D 1 FEATURES 2 GENERAL DESCRIPTION • Multi-master architecture • Interfaces with a large variety of microcontrollers
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82C200
RS232
PCX82C200
PCA80C552
D-3340
dls1u
D012-W
PCF82C200T
PCA82C200PN
PCA82C200T
Transistor MJE 5331
82C200
PCA82C200
PCA82C200P
PCA82C200TD
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pcf 7936
Abstract: 39379 0001 CMOS INVERTER s04 pcf 2116 lcd 00FF CDP68HC05D2 CDP6805
Text: gg HARRIS C D P 68H C 05D 2 HCMOS Microcontroller January 1991 • Typical P o w e r >. O p e r a tin g . 17 .5m W ► W A I T .8m W ► S T O P .10.0 iW
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CDP6QHC05D2
16-Bit
CDP68HC05D2
pcf 7936
39379 0001
CMOS INVERTER s04
pcf 2116 lcd
00FF
CDP68HC05D2
CDP6805
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Untitled
Abstract: No abstract text available
Text: BSE D • Ö 53ti320 GG lb75S ' PNP Silicon High Voltage Transistor I S IP SIEMENS/ SPCLt SEMICONDS • • • • • Suitable for video output stages in TV sets High breakdown voltage Low collector-em itter saturation voltage Low capacitance Complementary type: BF 622 NPN
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53ti320
lb75S
Q62702-F567
Q62702-F1053
103mA
23b32Q
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2N3792 MOTOROLA
Abstract: 2N3789 2N3791 MOTOROLA 2N3713 MOTOROLA motorola 2n3789 GG04 2n3792 2N3790 MOTOROLA N3790 2N3790+MOTOROLA
Text: MOTOROLA SC XSTRS/R F 12E D | tj3fe.7aSM GGÖMSG1 T | "7 ^ 3 3 -2 3 2N3789. MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N3792 S IL IC O N PNP POW ER T R A N S IS T O R S 10 A M P E R E . . designed for medium-speed switching and amplifier applications. These devices feature:
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2N3789.
2N3792
2N3789
2N3790)
2N3791,
2N3792)
2N3713
2N3716
2N3701
2N3792 MOTOROLA
2N3791 MOTOROLA
2N3713 MOTOROLA
motorola 2n3789
GG04
2n3792
2N3790 MOTOROLA
N3790
2N3790+MOTOROLA
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN & 4088 T ' 77'Û7~ U | SANYO SEMICONDUCTOR CORP S3E » 7 cH 7 Q 7 b GGÜ'lflSS I TSAJ 530 CMOS LSI LC7471 No. % 4088 i SAiYO i On-screen Display Controller for NTSC-format Video Preliminary OVERVIEW PINOUT The LC7471 is a video display controller for superim
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LC7471
LC7471
24-character
64-line
176-character
18-pixel
24-character
12-line
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diode GG 79
Abstract: BAW 79 W 79AB
Text: SIEMENS Silicon Switching Diodes • For high-speed switching • High breakdown voltage • Com mon cathode Type BAW BAW BAW BAW 79 79 79 79 A B C D BAW 79 A . BAW 79 D Marking Ordering Code tape and reel GE GF GG GH Q62702-A781 Q 62702-A782 Q62702-A771
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Q62702-A781
62702-A782
Q62702-A771
Q62702-A733
EHA07003
EH800I00
diode GG 79
BAW 79 W
79AB
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diodes BAW 79 A BAW 79 D • For high-speed switching • High breakdown voltage • Common cathode Type Marking Ordering Code tape and reel BAW 79 A BAW 79 B BAW 79 C BAW 79 D GE GF GG GH Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733
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Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
OT-89
D12D434
fl235bÃ
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24-18AWG
Abstract: 350RA DG350R-3 DG350
Text: A DEGSON cWus at & ä t, 3-* f£ ^ Sa Mi DEGSON ELECTRONICS CO., LTD. » a * íf M : II M- = » tt : m# : C € @> if M2, ÍR. PA66. UL94V-0 300V 7A 20m fi 5000M fi /DC1000V AC2000V/1 Min 24-18AWG 1.0mm2 íg tó fe P á : ÉÊt i È P I : IB fe S : m m 14 gg
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DG350R-3
UL94V-0
5000MQ/DC1000V
AC2000V/1
24-18AWG
350RA
DG350
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Untitled
Abstract: No abstract text available
Text: H igh p e rfo rm an c e 256KX32 CMOS SGRAM gg AS4LC256K32S0 II 8 Megabit CMOS synchronous graphic RAM Features • Burst read, single w rite operation • LVTTL compatible 1/O •3 .3 V pow er supply • JEDEC standard package, pinout and function - 10 0 -p in PQFP an d TQFP
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256KX32
AS4LC256K32S0
32S0-133Q
32S0-100Q
32S0-133TQ
00TQC
1-60002-A.
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74hc595 TI
Abstract: 74HC595M
Text: nOTOROLA SC -CLOGIC3- GE D ¥ b3b7ESS GGÜGSEG 1 T -i/ é -0 9 -O S MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC595 8-Bit Serial-lnput/Serial- or Parallel-Output Shift Register with Latched 3-State Outputs J SU FFIX CERAM IC C A S E 620 09 High-Performance Silicon-Gate CM OS
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MC54/74HC595
LS595.
HC595
MC54/74HC595
3b7S52
74hc595 TI
74HC595M
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NFN40
Abstract: FAN 7607 NFN40-7610 NFS40-7608 PS/604078 NFN40-7615
Text: a r te s E C H N O L P V tm Oi VI Gg I E NFS40 and NFN40 SERIES Single and triple output S • 5.0 x 3.0 x 1.2 inch package 1U applications • Industry standard package • Overvoltage and short circuit protection • 40W with free air convection • Fixed frequency operation (NFN Series)
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NFS40
NFN40
NFS40:
EN55022,
EN55011
NFN40:
FAN 7607
NFN40-7610
NFS40-7608
PS/604078
NFN40-7615
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Sharp IIS
Abstract: C31A SHARP ORDERING INFORMATION
Text: SHARP b lE CORP LH5P8512 FEATURES • 524,288 x 8 bit organization • Access time: 60/70/80 ns MAX. • Cycle time: 110/130/150 ns (MIN.) • Power supply: D • ûlfiOTSfi GG G T b 5 5 D3S H S R P J PRELIMINARY CMOS 4M (512K x 8) Pseudo-Static RAM •
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LH5P8512
32-pin,
600-mil
525-mil
400-mil
LH5P8512
Sharp IIS
C31A
SHARP ORDERING INFORMATION
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AS4LC256K32S0-150QC
Abstract: dox5
Text: H igh p erform ance 256K X 32 CMOS SGRAM gg II AS4LC256K32S0 8 M egabit CM OS synchronous graphic RAM Features • • • • • O rganization - 1 3 1 ,0 7 2 w o rd s x 3 2 bits x 2 banks • Fully synchronous - All signals referen c e d to p o sitiv e ed g e o f clock
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AS4LC256K32S0
256KX32
100-pin
100-pin,
-150QC
AS4LC256K32S0-1
2S0-100
AS4LC256K32S0-133TQC
AS4LC25
AS4LC256K32S0-150QC
dox5
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CDP6805G2
Abstract: CDP6805G2C
Text: M 3 G É S7 1 a 0 3 3 n b 4QE D HARRIS S E M I C O N D SE CT OR IHAS C DP6805G 2 C DP6805G 2C gg H A R R IS CMOS High Performance Silicon Gate 8-Bit Microcontroller J a n u a ry 1 9 9 1 Features • • • • • • • • • • • • • • • •
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M3G2E71
CDP6805G2
CDP6805G2C
CDP6805G2C
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