relay 12 volt
Abstract: 12 volt 10 amp relay Battery Charger 12 v 20 a mobile charger 12 v 20 amp battery relay switch mobile circuit diagram 12 volt relay spark plugs GG114
Text: GG-1141-15B 1.03 Order P/N: GG-1141-15B 3 3.00 20 5.07 BAT 3 AMP IGN JMK, Inc. MOBILE POWER MONITOR GG-1141-15B 12 VOLT DC 15 AMP 20 AMP Operating voltage: 12 Vdc Operating current: 15 amp. Operating temperature: -40 c to 50 C Internal battery charger: 13.8 V
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GG-1141-15B
relay 12 volt
12 volt 10 amp relay
Battery Charger 12 v 20 a
mobile charger
12 v 20 amp battery
relay switch
mobile circuit diagram
12 volt relay
spark plugs
GG114
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ILQ5 v526
Abstract: E91231 IL74 ILD74 ILQ74 SMD a6 Transistor ILQ2 transistor SMD a6 k
Text: IL1, IL2, IL5, IL74 ILD1, ILD2, ILD5, ILD74 ILQ1, ILQ2, ILQ5, ILQ74 HIGH DENSITY PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 IL* Package 'FF' marked I_ _ _ FF ILD*/ILQ* Package 'GG' (marked I_ _ _ GG) IL1 IL2 IL5
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ILD74
ILQ74
E91231
DB91088m-AAS/A6
ILQ5 v526
E91231
IL74
ILD74
ILQ74
SMD a6 Transistor
ILQ2
transistor SMD a6 k
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4916 mosfet
Abstract: 8 pin IC 4916 SYN500 TDA 4916 GG Q67000-A9230 voltage multiplier GPS05144 Transistors Diodes smd k5 diode GG 79 smd transistor K1
Text: SMPS-IC with MOSFET Driver Output TDA 4916 GG Features • • • • High clock frequency Low current drain High reference accuracy All monitoring functions P-DSO-24-1 Type Ordering Code Package TDA 4916 GG Q67000-A9230 P-DSO-24-1 Functional Description and Application
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P-DSO-24-1
Q67000-A9230
GPS05144
4916 mosfet
8 pin IC 4916
SYN500
TDA 4916 GG
Q67000-A9230
voltage multiplier
GPS05144
Transistors Diodes smd k5
diode GG 79
smd transistor K1
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Untitled
Abstract: No abstract text available
Text: SMPS-IC with MOSFET Driver Output TDA 4916 GG Features • • • • High clock frequency Low current drain High reference accuracy All monitoring functions P-DSO-24-1 Type Ordering Code Package TDA 4916 GG Q67007-A9230 P-DSO-24-1 Functional Description and Application
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P-DSO-24-1
Q67007-A9230
GPS05144
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2SC1766C
Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133
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2SC1766A
2SC1766B
2SC1766C
2SC1766D
MM1941
MPS6512
MPS6513
TP5377
TP5376
HSE144
BFY16
2SC1335
DIODE 10N 40D
2SC306
2N2161
2N2210
2N1410A
2N1410
2N2197 semelab
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Untitled
Abstract: No abstract text available
Text: SKM 75GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 MG N8 D8 .O 2 QGJ N8 D8ST .03+ 2 MGN8A * 5(+ %41(/<-+( +=(0-?-(F SEMITRANS 2 Trench IGBT Modules QHJJ 7 RJ E .0 2 RJ N8 GG E QJJ E V MJ 7 QJ Z+ .0 2 MG N8 RJ E .0 2 RJ N8 GG E QJJ E
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75GB176D
11Typ.
12Typ.
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MCT210
Abstract: E91231
Text: MCT210 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm 2.54 APPROVALS z UL recognised, File No. E91231 Package Code " GG " 7.0 6.0 1 2 6 5 3 4 1.2 DESCRIPTION 7.62 6.62 The MCT210 optically coupled isolator consists of an infrared light emitting diode and
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MCT210
E91231
MCT210
32mAIF
5x1010
DB91089
E91231
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2SC1312
Abstract: 2SC1840E BA 92 SAMSUNG TI480 2N2888 LOW-POWER SILICON NPN 2SC900 PET8002 2N2856 25M SOT89
Text: LOW-POWER SILICON NPN Item Number Part Number 5 -10 NB211XJ NB211YJ MMBC1622D7 MMBC1622D7 MMBC1622D7 2SC1840F 2SCl840F NBOllEU NBOllFU NB013EU ~gg~~~~ -15 20 NBOllFK NB013EK NB013FK NB013FL PET8002 PET8004 MMBC1622D8 MMBC1622D8 TMPT1622000 25 30 2SC1840E 2SCl840E
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NB211XJ
NB211YJ
MMBC1622D7
2SC1840F
2SCl840F
NB013EU
NB013EK
NB013FK
2SC1312
2SC1840E
BA 92 SAMSUNG
TI480
2N2888
LOW-POWER SILICON NPN
2SC900
PET8002
2N2856
25M SOT89
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TIL111
Abstract: TIL117 TIL116 TIL114 TIL111 equivalent E91231 TIL111X TIL114X TIL116X TIL117X
Text: TIL111X, TIL114X, TIL116X, TIL117X TIL111, TIL114, TIL116, TIL117 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS z UL recognised, File No. E91231 Package Code " GG " 'X' SPECIFICATION APPROVALS VDE 0884 in 3 available lead form :- STD - G form
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TIL111X,
TIL114X,
TIL116X,
TIL117X
TIL111,
TIL114,
TIL116,
TIL117
E91231
TIL111
TIL117
TIL116
TIL114
TIL111 equivalent
E91231
TIL111X
TIL114X
TIL116X
TIL117X
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smd transistor 662
Abstract: h11av2 equivalent H11AV3 E91231 H11AV H11AV1 H11AV1X H11AV2 H11AV2X H11AV3X
Text: H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm APPROVALS z UL recognised, File No. E91231 Package System " GG " 'X' SPECIFICATION APPROVALS z z VDE 0884 in 3 available lead form : - STD - G form
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H11AV1X,
H11AV2X,
H11AV3X
H11AV1,
H11AV2,
H11AV3
E91231
EN60950
P01102464
H11AV
smd transistor 662
h11av2 equivalent
H11AV3
E91231
H11AV1
H11AV1X
H11AV2
H11AV2X
H11AV3X
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MOC8102
Abstract: moc8103 P01102464 E91231 MOC8101 MOC8101X MOC8102X MOC8103X MOC8104 MOC8104X
Text: MOC8101X,MOC8102X,MOC8103X, MOC8104X,MOC8105X MOC8101, MOC8102, MOC8103,MOC8104,MOC8105 NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS z UL recognised, File No. E91231 Package Code " GG " 'X' SPECIFICATIONAPPROVALS z VDE 0884 in 3 available lead form : - STD
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MOC8101X
MOC8102X
MOC8103X,
MOC8104X
MOC8105X
MOC8101,
MOC8102,
MOC8103
MOC8104
MOC8105
MOC8102
P01102464
E91231
MOC8101
MOC8103X
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ISD203
Abstract: IS201 IS202 IS203 IS204 ISD201 ISD202 ISD204 ISQ201 ISQ202
Text: IS201, IS202, IS203, IS204, ISD201, ISD202, ISD203, ISD204, ISQ201, ISQ202, ISQ203, ISQ204 HIGH DENSITY PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS z UL recognised, File No. E91231 Package Code " GG " or " FF " IS201 IS202 IS203 IS204 7.0 6.0 'X' SPECIFICATIONAPPROVALS
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IS201,
IS202,
IS203,
IS204,
ISD201,
ISD202,
ISD203,
ISD204,
ISQ201,
ISQ202,
ISD203
IS201
IS202
IS203
IS204
ISD201
ISD202
ISD204
ISQ201
ISQ202
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ISD202
Abstract: ISQ202 ISD201 IS201 IS202 IS203 IS204 ISD203 ISD204 ISQ201
Text: IS201, IS202, IS203, IS204, ISD201, ISD202, ISD203, ISD204, ISQ201, ISQ202, ISQ203, ISQ204 HIGH DENSITY PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS z UL recognised, File No. E91231 Package Code " GG " or " FF " IS201 IS202 IS203 IS204 7.0 6.0 'X' SPECIFICATIONAPPROVALS
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IS201,
IS202,
IS203,
IS204,
ISD201,
ISD202,
ISD203,
ISD204,
ISQ201,
ISQ202,
ISD202
ISQ202
ISD201
IS201
IS202
IS203
IS204
ISD203
ISD204
ISQ201
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DB91028
Abstract: smd transistor 662 x 4N25 APPLICATION NOTE 4N25 4N25X 4N26 4N26X 4N27 4N27X 4N28
Text: 4N25X, 4N26X, 4N27X, 4N28X 4N25, 4N26, 4N27, 4N28 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS z UL recognised, File No. E91231 Package Code " GG " 'X' SPECIFICATIONAPPROVALS z VDE 0884 in 3 available lead form : - STD z Dimensions in mm 2.54
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4N25X,
4N26X,
4N27X,
4N28X
E91231
EN60950
P01102464
DB91028m-AAS/A5
DB91028
smd transistor 662 x
4N25 APPLICATION NOTE
4N25
4N25X
4N26
4N26X
4N27
4N27X
4N28
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isolator IC 4N35
Abstract: No abstract text available
Text: 4N35X, 4N36X, 4N37X, 4N35, 4N36, 4N37, OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 Package System " GG " 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802
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4N35X,
4N36X,
4N37X,
E91231
DB90046m-AAS/A5
isolator IC 4N35
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smd transistor yc
Abstract: Transistors Diodes smd k5
Text: SIEM EN S SMPS-IC with MOSFET Driver Output TDA 4916 GG Features • • • • High clock frequency Low current drain High reference accuracy All monitoring functions P-DSO-24-1 Type Ordering Code Package TDA 4916 GG Q67000-A9230 P-DSO-24-1 Functional Description and Application
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PDF
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P-DSO-24-1
Q67000-A9230
TDA4916GG
smd transistor yc
Transistors Diodes smd k5
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BA204
Abstract: BA-204
Text: TELEFUNKEN ELECTRONIC 17E » • ÖTEDO^b OOD'ÌTIB 5 H A L GG BA 204 IM electronic Creative Technologies Silicon Fpitaxial Planar Diode Applications: General purpose Dimensions in mm Cathoda =>26 1 1 <3.9 g<ass -—' - n u— Standard glass case
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LM359
Abstract: No abstract text available
Text: LM359 gg Semiconductor National ÆM LM359 Dual, High Speed, Programmable, Current Mode Norton Amplifiers General Description Features The LM359 consists of two current differencing (Norton) in put amplifiers. Design emphasis has been placed on obtain
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OCR Scan
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LM359
LM359
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LF158A
Abstract: LF158 lf157h 12 volt dc to 220 volt ac inverter SCHEMATIC LF356BM LF356N ST LF155A
Text: LF155/LF156/LF157 gg National 4LM Semiconductor LF155/LF156/LF157 Series Monolithic JFET Input Operational Amplifiers General Description These are the first monolithic JFET Input operational ampli fiers to Incorporate well matched, high voltage JFETs on the
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LF155/LF156/LF157
LF155/LF156/LF157
LF156
LF155
LF158A
LF158
lf157h
12 volt dc to 220 volt ac inverter SCHEMATIC
LF356BM
LF356N ST
LF155A
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Diode BAY 93
Abstract: diode MARKING A9 3814 rus25 Scans-0014926
Text: TELEFUNKEN ELECTRONIC 17E D • Û00S753 b ■ AL GG BAY 93 ■¡nH IF(U I«IM electronic Creative Technologies T -Q l-Q j Silicon Epitaxial Planar Diode Applications: Very fast switches Dim ensions in mm Cathode »26 Standard glass case 5 4 A 2 DIN 41880
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000S7S3
ruS25Â
0Dtn754
T-03-09
Diode BAY 93
diode MARKING A9
3814
rus25
Scans-0014926
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Untitled
Abstract: No abstract text available
Text: 841A«841B gg National H i Semiconductor 74FCT841A«74FCT841B 10-Bit Transparent Latch with TRI-STATE Outputs General Description Features The bus interface latch is designed to eliminate the extra packages required to buffer existing latches and provide ex
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74FCT841A
74FCT841B
10-Bit
FCT841A/B
FCT373A.
74FCTA
74FCTB
500ft
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WY smd transistor
Abstract: No abstract text available
Text: fl235bD5 SIEMENS GG^^ßDÖ TÔT • PROFETO BTS 442 E2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection • Current limitation • Short-circuit protection
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fl235bD5
O-22QAB/5
O-220AB/5,
E3043
Q67060-S6206-A2
E3043
Q67060-S6206-A3
O-22QAB/5,
E3062
BTS442E2
WY smd transistor
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1838 t infrared
Abstract: 1838 b infrared LP324 LP2902 TL 1838
Text: LP124/LP2902/LP324 gg National C l Semiconductor LP124/LP2902/LP324 Micropower Quad Operational Amplifier General Description Features The LP124 series consists of four independent, high gain internally compensated micropower operational amplifiers. These amplifiers are specially suited for operation in battery
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LP124/LP2902/LP324
LP124/LP2902/LP324
LP124
IP124,
TL/H/8562-17
1838 t infrared
1838 b infrared
LP324
LP2902
TL 1838
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Diode BAY 93
Abstract: a9 sot 23 diode
Text: TELEFUNKEN ELECTRONIC 17E D Û00S753 b • AL GG ■ BAY 93 ■¡nH IF(U I«IM electronic Creative Technologies T -Q l-Q j Silicon Epitaxial Planar Diode Applications: Very fast switches Dimensions in mm Cathode »26 Standard glass case 5 4 A 2 DIN 41880 JEDEC DO 35
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00S753
Diode BAY 93
a9 sot 23 diode
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