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    GG1 DIODE Search Results

    GG1 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GG1 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    M54535P

    Abstract: No abstract text available
    Text: I b 3E GG1 S 0 1 Ô E T 4 • H I T 3 b E M 'l ñ S ? M IT S U B IS H I D G T L M IT S U B IS H I BIPOLAR DIG ITA L ICs M54535P L O G IC 7-UNIT 150mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE DESCRIPTION The M54535P, 7-channel sink driver, consists of 14 NPN tran­


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    M54535P 150mA M54535P, 150mA M54535P PDF

    2SK623

    Abstract: 200V 50A mos fet
    Text: b lE D • 2SK623 MMTbEGS GG1 3 1 1 D flSb ■ H i m HITA C H I/ O PTO ELEC TR O N IC S SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES 1 Gaie 2 Drain _ 2£ • Low On-Resistance i Flange ) 3. Source • High Speed Switching I Dim ensions in mm I


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    2SK623 DD13113 -2SK623 2SK623 200V 50A mos fet PDF

    M54643L

    Abstract: No abstract text available
    Text: b3E • [3 2 4 ^ 0 2 7 M IT S U B IS H I GG1 S 2 0 S DGTL Moa M IT 3 ■ M I T S U B I S H I B I P OL AR DI GI TAL ICs M 54643L L O G IC BI-DIRECTIONAL MOTER DRIVER DESCRIPTION The M54643L is a semiconductor integrated circuit capable of directly driving small bidirectional motors.


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    54643L M54643L Bra4643L 100/i PDF

    EM07

    Abstract: gg1 diode
    Text: SCHRACK General Purpose Relays Accessories Miniature Relay PT • Easy replacement of relays on a densely packed DIN rail ■ No reduction of protection class or creepage/clearance with plastic retainer ■ Plug-in indicator- and protection modules ■ Retainer clip with ejection function for relays of 29 or 35mm


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    2002/95/EC) F0263-D EM07 gg1 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: SCHRACK General Purpose Relays Interface Plug-in Relay XT • 1 pole 16 A, 2 pole 8 A, 1 CO contact or 2 CO contacts ■ DC- or AC coil, sensitive coil 400 mW ■ Reinforced insulation, protection class II VDE 0700 ■ 4 kV / 8 mm coil-contact ■ Manual test tab, optionally lockable1)


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    2002/95/EC) F0289-A ofB758, E214025 PDF

    CGY2021G

    Abstract: LQFP48 PCA5075 SMD0603
    Text: Philips Semiconductors Objective specification DCS/PCS 2 W power amplifier CGY2021G FEATURES G EN ER A L DESCRIPTION • Pow er Amplifier PA overall efficiency 48% (DCS) The C G Y 2 0 2 1 G is a D C S /P C S cla ss 1 G a A s Monolithic M icrowave Integrated Circuit (MMIC) power amplifier


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    CGY2021G 48-pin PCA5075 UBA1710. CGY2021G DlD1fl71 LQFP48 SMD0603 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G FEATURES G E N E R A L DESCRIPTION • Powsr Amplifier PA overall efficiency 50% (DCS) The CGY2021G is a DCS/PCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier


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    CGY2021G 48-pin PCA5077 UBA1710. CGY2021G SMD0603. PDF

    LQFP-48 footprint

    Abstract: schematics for a PA amplifier class c 7x7x1.4 n004 schematics for a PA amplifier 27 Mhz power amplifier power amplifier 33PF C5000 CGY2010G
    Text: Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% • Integrated power sensor driver The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power


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    PCA5075 SA1620. CGY2010G; CGY2011G CGY2010G CGY2011G LQFP-48 footprint schematics for a PA amplifier class c 7x7x1.4 n004 schematics for a PA amplifier 27 Mhz power amplifier power amplifier 33PF C5000 PDF

    SZG05A0A

    Abstract: No abstract text available
    Text: APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 Z-Power LED X10490 Technical Data Sheet RoHS Specification SSC-SZG05A0A September 2012 1 www.seoulsemicon.com 서식번호 : SSC- QP- 7- 07- 12 Rev.00 APCPCWM_4828539:WP_0000001WP_000000


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    0000001WP X10490 SSC-SZG05A0A SZG05A0A SZG05A0A PDF

    ML4412N

    Abstract: No abstract text available
    Text: b lE ]> • bBM'ìflST M IT S U B IS H I DOmSES T ib DISC R ETE « n iT S MITSUBISHI LASER DIODES ML4XX2 SERIES SC FOR OPTICAL INFORMATION SYSTEMS ML4012N, ML4102, ML4402, ML4412N, ML4442N type name DESCRIPTION FEATURES ML4XX2 is an AIGaAs semiconductor laser which


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    ML4012N, ML4102, ML4402, ML4412N, ML4442N ML4412N PDF

    MARKING 303 SOT23

    Abstract: marking ah3 marking 362 sod-323 Marking af1 marking AK SMV1251-011LF marking ek marking bg1 303 MARKING SOT23
    Text: DATA SHEET SMV1247SMV1255: Hyperabrupt Tuning Varactors Features Designed for high-volume commercial applications High capacitance ratio, C0.3 V/C4.7 V = 12 typ. ● Multiple packages: SOT-23, SOD-323, SC-70 and SC-79 ● Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C


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    SMV1247 SMV1255: OT-23, OD-323, SC-70 SC-79 J-STD-020 SMV1255 MARKING 303 SOT23 marking ah3 marking 362 sod-323 Marking af1 marking AK SMV1251-011LF marking ek marking bg1 303 MARKING SOT23 PDF

    gsm signal amplifier circuit diagram

    Abstract: MGD629
    Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Am plifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier


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    PCA5075 SA1620. CGY2013G CGY2013G MGD629 SMD0402; SMD0603. gsm signal amplifier circuit diagram MGD629 PDF

    BV-1 501

    Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
    Text: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1


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    LTC1150 LTC1150 5e-12 5e-11 2857E-11 65e-11 7124E-04 3e-11 9605e-8 74902E-10 BV-1 501 BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01 PDF

    irf 652

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 50% (DCS) The CGY2021G is a DCS/PCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier


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    48-pin PCA5077 UBA1710. CGY2021G CGY2021G irf 652 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SMV1247SMV1255: Hyperabrupt Tuning Varactors Features Designed for high-volume commercial applications High capacitance ratio, C0.3 V/C4.7 V = 12 typ. ● Multiple packages: SOT-23, SOD-323, SC-70 and SC-79 ● Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C


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    SMV1247 SMV1255: OT-23, OD-323, SC-70 SC-79 J-STD-020 SMV1255 PDF

    SMV1247-SMV1255

    Abstract: SMV1251-011LF
    Text: DATA SHEET SMV1247-SMV1255 Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs • High-volume commercial systems Features • High capacitance ratio: C0.3V/C4.7V = 12 typical • Packages rated MSL1, 260 °C per JEDEC J-STD-020


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    SMV1247-SMV1255 J-STD-020 SMV1247 SMV1255 200061K SMV1251-011LF PDF

    SMV1247-011

    Abstract: No abstract text available
    Text: DATA SHEET SMV1247SMV1255: Hyperabrupt Tuning Varactors Features Designed for high-volume commercial applications High capacitance ratio, C0.3 V/C4.7 V = 12 typ. ● Multiple packages: SOT-23, SOD-323, SC-70 and SC-79 ● Available lead Pb -free and RoHS-compliant MSL-1 @ 250 °C


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    SMV1247 SMV1255: OT-23, OD-323, SC-70 SC-79 J-STD-020 SMV1255 SMV1247-011 PDF

    SMV-1249-074LF

    Abstract: SMV1251-074LF SMV1249-074LF Smv1249-004lf SMV1251-011LF SMV1249-079LF SMV1255-079LF SOT23 marking GF
    Text: DATA SHEET SMV1247-SMV1255 Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs • High-volume commercial systems Features • High capacitance ratio: C0.3V/C4.7V = 12 typical • Packages rated MSL1, 260 °C per JEDEC J-STD-020


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    SMV1247-SMV1255 J-STD-020 SMV1247 SMV1255 200061J SMV-1249-074LF SMV1251-074LF SMV1249-074LF Smv1249-004lf SMV1251-011LF SMV1249-079LF SMV1255-079LF SOT23 marking GF PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SMV1247SMV1255: Hyperabrupt Tuning Varactors Features Designed for high-volume commercial applications High capacitance ratio, C0.3 V/C4.7 V = 12 typ. ● Multiple packages: SOT-23, SOD-323, SC-70 and SC-79 ● Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C


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    SMV1247 SMV1255: OT-23, OD-323, SC-70 SC-79 J-STD-020 SMV1255 PDF

    SMV1251-011LF

    Abstract: No abstract text available
    Text: DATA SHEET SMV1247-SMV1255 Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs • High-volume commercial systems Features • High capacitance ratio: C0.3V/C4.7V = 12 typical • Packages rated MSL1, 260 °C per JEDEC J-STD-020


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    SMV1247-SMV1255 J-STD-020 SMV1247 SMV1255 200061I SMV1251-011LF PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SMV1247-SMV1255 Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs • High-volume commercial systems Features • High capacitance ratio: C0.3V/C4.7V = 12 typical • Packages rated MSL1, 260 °C per JEDEC J-STD-020


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    SMV1247-SMV1255 J-STD-020 SMV1247 SMV1255 200061N PDF

    SMV-1249-074LF

    Abstract: marking ek SMV1247-SMV1255 SMV1249-074LF SMV1255-004LF SMV1253-004LF SMV1255-040LF marking 362 sod-323 SMV1247 SMV1247-079LF
    Text: DATA SHEET SMV1247-SMV1255 Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs • High-volume commercial systems Features • High capacitance ratio: C0.3V/C4.7V = 12 typical • Packages rated MSL1, 260 °C per JEDEC J-STD-020


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    SMV1247-SMV1255 J-STD-020 SMV1247 SMV1255 200061L SMV-1249-074LF marking ek SMV1249-074LF SMV1255-004LF SMV1253-004LF SMV1255-040LF marking 362 sod-323 SMV1247-079LF PDF

    SZX05A0A

    Abstract: UV led diode 320 nm SZG05A0A DIODE BB1 gg1 diode
    Text: Z-Power LED X10490 Technical Data Sheet Pb Free Specification SSC-SZX05A0A Rev.05_110325 SSC Drawn Approval Customer Approval Rev. 05 1 March 2011 www.seoulsemicon.com 서식번호 : SSC-QP-7-07-12 (Rev.00) Z-Power LED X10490 Technical Data Sheet [ Contents ]


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    X10490 SSC-SZX05A0A SSC-QP-7-07-12 X1049EDs SZX05A0A UV led diode 320 nm SZG05A0A DIODE BB1 gg1 diode PDF

    CGY2013G

    Abstract: LQFP48 PCA5075 SA1620 SMD0603
    Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.


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    CGY2013G PCA5075 SA1620. CGY2013G 711032t 010b027 LQFP48 PCA5075 SA1620 SMD0603 PDF