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    Abstract: No abstract text available
    Text: P D - 9.1275 International [ïô i Rectifier IRL2310 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDs on Specified at VGS= 4.5V & 10V 175°C Operating Temperature


    OCR Scan     		PDF IRL2310 Liguria49 5S452 GG22331