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    20M60

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y Q D APT20M45BNR 200V APT20M60BNR 200V O S POWER MOS IV* 58A 50A 0.045Í2 0.0600 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		APT20M45BNR APT20M60BNR APT20M45/20M60BNR O-247AD GGQm27 20M60 PDF

    HM65797

    Abstract: No abstract text available
    Text: M R V B electronic June 1992 HM 65797 HI-REL DATA SHEET 256 k X 1 HIGH SPEED CMOS SRAM FEATURES , FAST ACCESS TIME : 25*/35/45/55 ns , LOW POWER CONSUMPTION ACTIVE: 550 mW STANDBY : 190 mW 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS


    OCR Scan     		HM-65797 HM65797 PDF