apparatebau hundsbach
Abstract: ceag ghg 291 ceag ghg 534 ghg 44 ceag SB-2787 SB-0765 SB-1787 SB-9101 SB-9211 ceag ghg
Text: + 23 in - 13 + 23 in - 13 DC STANDARD + 23 in - 13 DC STANDARD SB 0728 + 23 in - 13 DC STANDARD + 21 - U 11 + 21 - U 11 + 21 - U 11 + 21 - U 11 + 21 - U 11 + 21 - U 11 DC STANDARD DC STANDARD SB 0728 SB 0728 SB 0728 SB 0728 DC STANDARD DC STANDARD SB 0728
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ceag ghg 122 3121
Abstract: ceag ghg 534 ceag ghg 534 2506 crouse-hinds GHG 960 663 B0708 CEAG PTB 00 ATEX 3108 ceag ghg 412 ceag ghg 543 ceag GHG 543 2306 Ex-92
Text: C A T A L O G U E E X P L O S I O N P R O T E C T E D 3 1 0 P R O D U C T S The CEAG Sicherheitstechnik GmbH factory in Eberbach, Germany The CEAG Nortem SA Barcelona, Spain The factory in Sheerness, UK CEAG SICHERHEITSTECHNIK GMBH Essentials, Innovations and a few words about your money
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ambitious531
03/SL
D-69412
ceag ghg 122 3121
ceag ghg 534
ceag ghg 534 2506
crouse-hinds GHG 960 663
B0708
CEAG PTB 00 ATEX 3108
ceag ghg 412
ceag ghg 543
ceag GHG 543 2306
Ex-92
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GPON APD 1490nm
Abstract: GPON 1310nm TRANSMITTER CIRCUIT DIAGRAM 1310NM MMF SFF FTM-9423 F 8472 datasheet apd 2.5 g 1550nm Diplexer G984 IEC-60825
Text: May 15, 2007 SFF GPON ONT Diplexer FTM-9423P T -K(F)GH(i)G (ITU-T Rec.G.984.2) Members of FlexonTM Family Standard Compliant with ITU-T G.984.2, G.984.2 Amendment 1 Compliant with FCC 47 CFR Part 15, Class B Compliant with FDA 21 CFR 1040.10 and 1040.11,
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FTM-9423P
1244/2488M
1244Mbit/s
2488Mbit/s
1310/1490nm
GPON APD 1490nm
GPON
1310nm TRANSMITTER CIRCUIT DIAGRAM
1310NM MMF SFF
FTM-9423
F 8472
datasheet apd 2.5 g 1550nm
Diplexer
G984
IEC-60825
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FTM-9423P-KGHIG
Abstract: FTM-9423
Text: Sep 26, 2006 SFF G-PON ONT Diplexer FTM-9423P T -K(F)GH(E)(i)G (ITU-T Rec.G.984.2) Members of FlexonTM Family Standard Compliant with ITU-T Rec.G.984.2 Compliant with FCC 47 CFR Part 15, Class B Compliant with FDA 21 CFR 1040.10 and 1040.11, Class I
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FTM-9423P
1244Mbit/s
2488Mbit/s
1310/1490nm
1310nm
1490nm
1550nm
DS0000002-1c
FTM-9423P-KGHIG
FTM-9423
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Untitled
Abstract: No abstract text available
Text: S71NS128NA0/S71NS064NA0 Based MCPs Stacked Multi-Chip Product MCP MirrorBit Flash Memory and pSRAM 128 Mb (8M x 16-bit) and 64 Mb (4M x 16-Bit), 110 nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/ Write, Burst Mode Flash Memory with 16 Mb (1M x 16-Bit) pSRAM
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S71NS128NA0/S71NS064NA0
16-bit)
S71NS128
064NA0
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c9ab
Abstract: S29NS-N marking w53 S72WS-N S75NS128NDE w933
Text: S75NS128NDE Based MCPs 1.8 Volt-only, Stacked Multi-Chip Product MCP x16 MirrorBit Flash Memory and DRAM 128 Mb Multiplexed, Simultaneous Read/Write, Burst Mode Code Flash Memory 256 Mb Multiplexed, Burst Mode Data Flash Memory 128 Mb SDR DRAM ADVANCE
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S75NS128NDE
c9ab
S29NS-N
marking w53
S72WS-N
w933
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Untitled
Abstract: No abstract text available
Text: S75WS-N Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M x 16-Bit) RAM Type 4 and 512 Mb (32M x 16-bit) Data Storage Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW LQGLFDWHV VWDWHV WKH FXUUHQW WHFKQLFDO
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S75WS-N
16-bit)
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Untitled
Abstract: No abstract text available
Text: S75WS256Nxx Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M x 16-Bit) CellularRAM and 512 Mb (32M x 16-bit) Data Storage Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV
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S75WS256Nxx
16-bit)
S75WS-N-00
S75WS-Nformation
S75WS-N-00
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Untitled
Abstract: No abstract text available
Text: S75WS256Nxx Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M x 16-Bit) RAM Type 4 and 512 Mb (32M x 16-bit) Data Storage Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV
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S75WS256Nxx
16-bit)
S75WS-N-02
S75WS-N-02
17formation
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WG A5 6D 25 Z
Abstract: No abstract text available
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Megabit (8M x 16-Bit) pSRAM Type 4 ADVANCE INFORMATION Data Sheet 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV
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S71WS512Nx0/S71WS256Nx0
32M/16M
16-Bit)
S71WS-N-01
S71WS-N-01
WG A5 6D 25 Z
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Untitled
Abstract: No abstract text available
Text: S75WS256Nxx Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M/4M x 16-Bit) CosmoRAM and 512 Mb ( 32M x 16-bit) Data Storage Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV
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S75WS256Nxx
16-bit)
S75WS-N-01
S75WS-leteness,
S75WS-N-01
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Date Code Formats Altera EPF10K
Abstract: ep22v10 5962-9061102XA 5962-8854901xa 8686401LA 5962-8686401LA lift controller in vhdl ALTERA PART MARKING EPM7160 EPX780 transistor b2020
Text: Introduction Contents March 1995 Introduction The PLD Advantages of Altera
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Untitled
Abstract: No abstract text available
Text: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL-J
256M/128/64/32
16/8/4/2M
16-bit)
4M/2M/1M/512K/256K
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Untitled
Abstract: No abstract text available
Text: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL-J
256M/128/64/32
16/8/4/2M
16-bit)
4M/2M/1M/512K/256K
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Untitled
Abstract: No abstract text available
Text: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV UHJDUGLQJ WKH 6SDQVLRQ SURGXFW V GHVFULEHG KHUHLQ (DFK SURGXFW GHVFULEHG
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S71WS-N
S71WS-N
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S73WS256N
Abstract: din 82 RGV
Text: S73WS256N Based MCPs Stacked Multi-Chip Product MCP 512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Data Bus ADVANCE INFORMATION
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S73WS256N
32M/16M
16-bit)
16-bit
din 82 RGV
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transistor SMD s72
Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той
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OT323
BC818W
MUN5131T1.
BC846A
SMBT3904,
MVN5131T1
SMBT3904
OT323
transistor SMD s72
nec mys 501
MYS 99
transistor 8BB smd
st MYS 99 102
kvp 81A
kvp 81A DIODE
Kvp 69A
kvp 86a
smd transistor A7p
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Untitled
Abstract: No abstract text available
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Data Sheet 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
S71WS-N-00
S71WS-N-00
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OAOLP2
Abstract: temperature digital display JUMO Lan M smd transistor 1p7 bti ml-2 transistor SMD 1p6 transistor DK qe smd edto 116.4 8052ah basic toba 639 270645
Text: MCS@51 MICROCONTROLLER FAMILY USER’S MANUAL ORDER NO.: 272383-002 FEBRUARY 1994 Intel Corporation makes no warrsnfy for the uee of ite products and assumes no responsibility for any ewors which may appear in this document nor does it make a commitment to update the information contained herein.
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15consecutive
OAOLP2
temperature digital display JUMO Lan M
smd transistor 1p7
bti ml-2
transistor SMD 1p6
transistor DK qe smd
edto 116.4
8052ah basic
toba 639
270645
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Dell 3147 board diagram
Abstract: Harting 09 20 032 1520
Text: HARTING Industrial Connectors Han Intro duction HARTING worldwide Transforming customer wishes into concrete solutions The HARTING Technology Group is skilled in the fields of electrical, electronic and optical connection, transmission and networking, as well as in manufacturing, mechatronics and
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D-32328
MO/2013-04-03/8
Dell 3147 board diagram
Harting 09 20 032 1520
|
smcj 214 ghk
Abstract: BEM 45 BFW 100A marking code bdu bdx 338 SMCJ GFR GEK DIODES bfw glass tc 137/10 SMCJ11
Text: II,MCP SMCJ5.0 - SMCJ170CA SERIES W IU SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS INCO RPO RATED Features 1500 W atts Peak Pulse Pow er Dissipation 5.0 - 170 V Standoff Voltages Constructed with Glass Passivated Die Excellent Clamping Capability Fast Response Tim e
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MIL-STD-202
at133
SMCJ120
SMCJ130
SMCJ150
SMCJ160
SMCJ170
smcj 214 ghk
BEM 45
BFW 100A
marking code bdu
bdx 338
SMCJ GFR
GEK DIODES
bfw glass
tc 137/10
SMCJ11
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Untitled
Abstract: No abstract text available
Text: HXILINX Virtex 2,5 ¥ Field Programmable Gate Arrays N ovem ber 9, 1998 Version 1.1 - AD VAN C E P roduct S pecification Features • • • • • • Fast, high-density Field-P rogram m able Gate Arrays - D ensities from 50 k to 1M system gates - System perform ance up to 200 MHz
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BG432
BG352
HQ240
FG600
FG680
XCV300-6PQ240C
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TD 265 N 600 KOC
Abstract: core i5 520 Scans-049 camtex trays sii Product Catalog EPM9560 film hot BT 342 project TIL Display 7160S
Text: 1996 Data Book Data Book June 1996 A-DB-0696-01 Altera, MAX, M A X+PLUS, FLEX, FLEX 10K, FLEX 8000, FLEX 8000A, MAX 9000, MAX 7000, MAX 7000E, MAX 7000S, FLASHlogic, MAX 5000, Classic, M AX+PLUS II, PL-ASAP2, PLDshell Plus, FastTrack, AHDL, MPLD, Turbo Bit, BitBlaster, PENGN, RIPP 10, PLS-ES, ClockLock, ClockBoost,
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-DB-0696-01
7000E,
7000S,
EPF10K100,
EPF10K70,
EPF10K50,
EPF10K40,
EPF10K30,
EPF10K20,
EPF10K10,
TD 265 N 600 KOC
core i5 520
Scans-049
camtex trays
sii Product Catalog
EPM9560
film hot
BT 342 project
TIL Display
7160S
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siliconix fet
Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility
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J-23548
K24123
i39-40i
NZ3766
53-C-03
siliconix fet
Transistor E112 FET N-Channel
JFET TRANSISTOR REPLACEMENT GUIDE j201
E112 jfet
jfet bfw10 terminals
JFET BFW10 SPECIFICATIONS
4856a mosfet
Transistor E112 FET
FETs in Balanced Mixers Ed Oxner
equivalent components FET BFW10
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