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    GI856 DIODE Search Results

    GI856 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GI856 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Not Available for New Designs, Use RGP30A, RGP30B, RGP30D, RGP30G GI850, GI851, GI852, GI854, GI856, GI858 www.vishay.com Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop


    Original     		RGP30A, RGP30B, RGP30D, RGP30G GI850, GI851, GI852, GI854, GI856, GI858 PDF

    Untitled

    Abstract: No abstract text available
    Text: GI850, GI851, GI852, GI854, GI856, GI858 www.vishay.com Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106


    Original     		GI850, GI851, GI852, GI854, GI856, GI858 22-B106 DO-201AD AEC-Q101 2002/95/EC. PDF

    gI856 diode

    Abstract: No abstract text available
    Text: GI850, GI851, GI852, GI854, GI856, GI858 www.vishay.com Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106


    Original     		GI850, GI851, GI852, GI854, GI856, GI858 22-B106 DO-201AD AEC-Q101 2002/95/EC. gI856 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: GI850 thru GI858 Vishay Semiconductors Fast Switching Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 800 V IFSM 100 A trr 200 ns IR 10 µA VF 1.25 V Tj max. 150 °C DO-201AD Features • • • • Fast switching for high efficiency


    Original     		GI850 GI858 DO-201AD DO-201AD, UL-94V-0 J-STD-002B MIL-STD-750, 50mVp-p 28-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: GI850 thru GI858 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC


    Original     		GI850 GI858 2002/95/EC 2002/96/EC DO-201AD DO-201AD, 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: GI850 thru GI858 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC


    Original     		GI850 GI858 DO-201AD 2002/95/EC 2002/96/EC DO-201AD, 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: GI850 thru GI858 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC


    Original     		GI850 GI858 DO-201AD 2002/95/EC 2002/96/EC DO-201AD, J-STD-002 JESD22-B102 08-Apr-05 PDF

    GI850

    Abstract: GI851 GI858 JESD22-B102 J-STD-002
    Text: GI850 thru GI858 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC


    Original     		GI850 GI858 2002/95/EC 2002/96/EC DO-201AD DO-201AD, 18-Jul-08 GI851 GI858 JESD22-B102 J-STD-002 PDF

    Untitled

    Abstract: No abstract text available
    Text: GI850 thru GI858 Vishay General Semiconductor Fast Switching Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 800 V IFSM 100 A trr 200 ns IR 10 µA VF 1.25 V Tj max. 150 °C DO-201AD Features Mechanical Data • • • • •


    Original     		GI850 GI858 DO-201AD DO-201AD, UL-94V-0 J-STD-002B JESD22-B102D 10-Oct-05 PDF

    GI851

    Abstract: GI858 J-STD-002 GI850 GI852
    Text: GI850 thru GI858 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106


    Original     		GI850 GI858 22-B106 2002/95/EC 2002/96/EC DO-201AD AEC-Q101 DO-201AD, 11-Mar-11 GI851 GI858 J-STD-002 GI852 PDF

    GI856-E3/54

    Abstract: GI850 GI851 GI858 JESD22-B102D J-STD-002B
    Text: GI850 thru GI858 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC


    Original     		GI850 GI858 2002/95/EC 2002/96/EC DO-201AD DO-201AD, 08-Apr-05 GI856-E3/54 GI851 GI858 JESD22-B102D J-STD-002B PDF

    GI850

    Abstract: GI851 GI852 GI854 GI858 JESD22-B102D J-STD-002B
    Text: GI850 thru GI858 Vishay General Semiconductor Fast Switching Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 800 V IFSM 100 A trr 200 ns IR 10 µA VF 1.25 V Tj max. 150 °C DO-201AD Features Mechanical Data • • • • •


    Original     		GI850 GI858 DO-201AD DO-201AD, UL-94V-0 J-STD-002B JESD22-B102D 08-Apr-05 GI851 GI852 GI854 GI858 JESD22-B102D PDF

    Untitled

    Abstract: No abstract text available
    Text: GI850 thru GI858 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106


    Original     		GI850 GI858 22-B106 2002/95/EC 2002/96/EC DO-201AD AEC-Q101 DO-201AD, 2011/65/EU 2002/95/EC. PDF

    RGP15G diode

    Abstract: diode RGP30G diode GP20 gp20 diode zener diode cross reference 300v zener DIODE RG3j DIODE RG4A D0204AP G1854
    Text: GENL INSTR/ POWER SSE D • 3fll'D137 0003351 7 ■ FAST RECO VERY SILIC O N RECT IFIERS continued 2.0 1.5 IM A ] D0204AP DO 15 PKG TYPE ( (Ì GP20 % r \i D0204AP 00201AP (k <^ VRRM (volts) D0204AP l 50 , RGP15A RGP20A RG2A 100 RGP15B RGP20B RG2B BY296P


    OCR Scan     		D0204AP D0201AP RGP15A RGP20A RGP15B RGP20B BY296P RGP15D RGP15G diode diode RGP30G diode GP20 gp20 diode zener diode cross reference 300v zener DIODE RG3j DIODE RG4A G1854 PDF

    Minco CT16

    Abstract: CT16A Minco Products AC1009 ssr diagram Ideal make ssr MOSFET based SSR CT16 1n5406 diode
    Text: MINCO AC1009 20 AMP DC SOLID STATE RELAY INSTRUCTIONS Installation Instructions When using a Solid State Relay (SSR), it is essential that you remove heat from it. Whether mounting a SSR to a heatsink or to the side of a control cabinet, a thermal transfer medium should be used between


    Original     		AC1009 \MOD\AC1009\PRD\826MN Minco CT16 CT16A Minco Products AC1009 ssr diagram Ideal make ssr MOSFET based SSR CT16 1n5406 diode PDF

    d137 smd diode

    Abstract: rg3j 005 BYW36 v gp20 diode zener diode cross reference SRP300K rectifier diode GP20 SMD zener diode 203 DIODE RG4A EFR135
    Text: GENL INSTR/ POWER SSE D • 3fll'D137 0003351 7 ■ FAST RECOVERY SILICON RECTIFIERS continued 2.0 1.5 IMA] D0204AP DO15 PKG TYPE ( (Ì D0204AP GP20 % (k \i r 00201AP D0204AP <^ VRRM (volts) l 50 , RGP15A RGP20A RG2A 100 RGP15B RGP20B RG2B BY296P 200 RGP15D


    OCR Scan     		D0204AP 00201AP D0204AP RGP15J RGP15K RGP15M BYV95C BYV96D BYV96E d137 smd diode rg3j 005 BYW36 v gp20 diode zener diode cross reference SRP300K rectifier diode GP20 SMD zener diode 203 DIODE RG4A EFR135 PDF

    EQUIVALENT BYD33D

    Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
    Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and


    Original     		PBYR3045WT BYD73D CTB34M BYD73G SB1035 PBYR1040 1N5059 SB1040 EQUIVALENT BYD33D 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069 PDF

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode PDF

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF