S202DS2
Abstract: S202DS4 S102DS2 SHARP S202DS4 s201s01 SHARP S201S02 s201s02 S202DS4 SHARP IS1621 pc111ys
Text: Obsolete Optoelectronics Products and Replacement Part Numbers Subcategory Model SHARP Replacement Part Detector BS100D BR100C Detector BS100G1 BR100C Detector BS120R BR120 Detector BS521 BR520 Detector GA100T802MZ GA100T802MZ1 Detector GA100T8R1MZ GA100T8R2MZ
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BS100D
BR100C
BS100G1
BS120R
BR120
BS521
BR520
GA100T802MZ
GA100T802MZ1
S202DS2
S202DS4
S102DS2
SHARP S202DS4
s201s01
SHARP S201S02
s201s02
S202DS4 SHARP
IS1621
pc111ys
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gp1u28xp
Abstract: GP1S525V GP1U27XB GP1U291q GP1U28qp GP1U271R GP3A21 GP3A07 PQ09RD1X pc35* sharp
Text: Product Change Notification Type of Notification: Product Discontinuation ISSUE DATE LAST BUY DATE NOTIFICATION NO. LAST SHIP DATE 15 January 2003 31 March 2003 20030115-01 30 June 2003 This is to advise you that the following product s have been discontinued.
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BS100G1
GA100T8R1MZ
GL430
GL430QAB
GL450S
GL451VH3
GL481T
GL484
GL526J
GP1A20
gp1u28xp
GP1S525V
GP1U27XB
GP1U291q
GP1U28qp
GP1U271R
GP3A21
GP3A07
PQ09RD1X
pc35* sharp
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GL430
Abstract: PT430
Text: iSE o | fliflo?la ooaabsi a I SHARP ELEK/ MELEC DIV GL430 Infrared Light Emitting Diode GL430 • Narrow Beam Infrared Light Emitting Diode Features ■ O utline Dimensions Unit : mm 1. Narrow beam angle (A0: TYP. ±13°) 2. Epoxy resin package ■ Applications
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OCR Scan
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GL430
GL430
PT430)
0002bS3
T-41-11
PT430
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GL430
Abstract: LIGHT DIODE AI 4111 diode t 77 4-e
Text: iSE o | fliflo?la ooaabsi a I SHARP ELEK/ MELEC DIV GL430 Infrared Light Emitting Diode GL430 • Narrow Beam Infrared Light Emitting Diode Features ■ Outline Dimensions Unit : mm 1. Narrow beam angle (A0: TYP. ±13°) 2. Epoxy resin package ■ Applications
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OCR Scan
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GL430
100//S,
the50
GL430
LIGHT DIODE AI
4111
diode t 77 4-e
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MM5003
Abstract: GL430 PT430F PT430 T-41-61
Text: SHARP ELEK/ MELEC DIV 1SE D I öläQTTö 00Q2?t.b 3 I Phototransistors P T 4 3 • Features P T 43 0/P T 4 30 F / P T 4 3 F Narrow Acceptance Phototransistor ■ Outline Dimensions 1. Narrow acceptance epoxy resin package A 6 : TYP. ±13” 2. Visible light cut-off type : PT430F
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PT430/PT430F
PT430F
GL430)
PT430)
PT430F)
MM5003
GL430
PT430F
PT430
T-41-61
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laf 001
Abstract: PD43PI 43PI GL430 AD 4153 PIN Photodiode
Text: 7 SHARP ELEK/ MELEC DIV 1SE D | ölfl07Tfl OüG2b7t> B | PIN Photodiode PD43PI • PD43PI High Speed Photodiode Features ■ O utline Dimensions Unit : mm 1. High speed response (tr> t(: TYP. 100ns at RL=lkf i) 2. Intermediate acceptance (A0: TYP. ±25”)
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PD43PI
PD43PI
100ns
48MIN-
laf 001
43PI
GL430
AD 4153
PIN Photodiode
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t431
Abstract: c 4161
Text: SHARP ELEK/ MELEC DIV 1SE D I 01007^0 0005770 S I Phototransistors P T431/P T431F . P T • T-4 1 -6 1 4 3 1 / P T 4 3 _ N arrow Acceptance. High Sensitivity P hototransistor y.ifi 1 F Features 1. Narrow acceptance epoxy resin package : TY P. ± 1 3 ’
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PDF
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T431/P
T431F
PT431
PT431F
PT431F
PT431F)
GL430)
t431
c 4161
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PD43P1
Abstract: PD43PI
Text: SHARP ELEK/ MELEC DIV 15E D I 01007^0 0üü2b?t, z | PD43PI PIN Photodiode PD43PI • 1. srg High Soeed Photodiode Features 2. 3. High speed response tr, t(: TY P. 100ns at RL= l k f i Intermediate acceptance (A 6 \ TYP. ± 2 5 ”) Transparent epoxy resin package
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OCR Scan
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PD43PI
100ns
PD43PI
PD43P1
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