4170A

Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
Contextual Info: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C S 4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL

sg 403

Abstract: dynamic ram 8 bit 40X32
Contextual Info: PRODUCT INDEX • DRAM MODULES GM M 781000BS G M M 791000BS G M M 781000BNS G M M 781100BNS G M M 781000CNS G M M 781000DNS G M M 791000BNS G M M 791100BNS G M M 791000CNS GM M 791000DNS GM M 784000BS G M M 784000CS GM M 784000DS GM M 794000BS GM M 794000CS

PA6-GF30

Abstract: PA6GF30 PCC0558345 delphi 10 TORQUE
Contextual Info: NOTES Bemerkungen: MVL LOGO / MVL Logo MVL PART NO. / MVL Teilenr. EXPLODED VIEW M 1:1 GM LOGO / GM Logo GM ABBREVIATION / GM Kurzzeichen SECTION A-A Schnitt A-A TERMINAL CAVITY NO. / Kontaktkammernummerierung DATE CLOCK / Datumsuhr MATERIAL MARKING / Materialkennzeichnung

Inventec

Abstract: r288 2 dmr 42 C1031 10slp g4138 SC8211 u2030
Contextual Info: ITP CPU Banias Micro_FCPGA mPGA478 CLK GEN ICS950810 FSB 400MHz CRT DDR 266 North Bridge Montara-GM TV Encoder CH7011A DDR_SODIMM0 732 BGA DDR_SODIMM1 1.BLOCK DIAGRAM 2.BANIAS(1/3) 3.BANIAS(2/3) 4.BANIAS(3/3) 5.MONTARA-GM(1/5) 6.MONTARA-GM(2/5) 7.MONTARA-GM(3/5)

GM71C4400BJ70

Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
Contextual Info: MEMORY LINE-UP 1. DRAM 60ns IM IM xl GM 71C1000B-70 G M 7IC1000BJ-60 GM7 ] C 1OOOBJ-70 G M 7 1C 1OOOBJ-80 GM 71C1000BZ-60 GM 71C1000BZ-70 - 1 GM 71C1000BZ-80 GM71C1000HI,-60 > - ŒGM 71C1000BI.-70 M 71C1000BL-80 GM71C1000BLZ-60 GM71CIOO0BI.Z-70 G M 7IC I000H iy.-80

GH-1E

Abstract: GM-3A FML-G14S FML-G16S FML-G22S FMP-G12S FMX-G12S GFB30B GFB30C GFB30E
Contextual Info: - 66- AË B £ FML-G13S FML-G14S FML-G 1 6 S FML-G22S FMP-G 1 2 S FMP-G 3 F S FMP-G15FS FMX-G12S * GFB30B * GF B 3 0 C * * * * * GFB30E GF B 3 0 G GF D I O B GF D I O C GFDIOE * * * * * GFDIOG G H -IE G H -1F G H -3E G H -3F * GM-1 * GM-1A * GM-1B * GM-1C

RS508

Abstract: INVENTEC LPC47N253 C5302 r536 66662 d2l26 440021-3 C5802 r770
Contextual Info: ITP CPU Banias Micro_FCPGA mPGA478 CLK GEN ICS950810 FSB 400MHz CRT DDR 266 North Bridge Montara-GM TV Encoder CH7011A DDR_SODIMM0 732 BGA DDR_SODIMM1 LCM HubLink 1.BLOCK DIAGRAM 2.BANIAS(1/3) 3.BANIAS(2/3) 4.BANIAS(3/3) 5.MONTARA-GM(1/5) 6.MONTARA-GM(2/5)

rtm875t-606

Abstract: 240KR1 AN12947A AN12947 4810b XC390 rtm875t 012u3 XC001 E2B16
Contextual Info: A B C D E D-Sub DC-Adapter IN 2 3 4 Page 17 HOST Page 36 +1_8VSUS +1_5VRUN SMDDR_VTERM RT9173BPS TPS51124 Cantiga GM - RGB RGB - Dock Port Replicator TV Out PCI-E x16 Page 14 Cantiga PM/GM GM45 Page 14 LVDS DDR-SODIMM0 Low Speed I/O Audio LAN Page 17 +1.05VM

RTM875T-606

Abstract: AN12947 DIODE S4 77A PC123 s4 s104 diode 87a RTM875T AN12947A e3317 CLOCK RTM875T CH7318
Contextual Info: A B C D E D-Sub DC-Adapter IN 2 3 4 Page 17 HOST Page 36 +1_8VSUS +1_5VRUN SMDDR_VTERM RT9173BPS TPS51124 Cantiga GM - RGB RGB - Dock Port Replicator TV Out PCI-E x16 Page 14 Cantiga PM/GM Page 14 Low Speed I/O Audio LAN +VTT 1.05V +1.25VRUN.VM Dual Channel DDRII

Contextual Info: GMM73741G0CNS/SG-6/7/8 LG Semicon Co., Ltd. Description The GM M 7374100CNS/SG is a 4M x 36 bits Dynamic RAM MODULE which is assembled 9 pieces o f 4M x 4 bit DRAMs in 24 26 pin SOJ package on the printed circuit board with decoupling capacitors. The GM M 7374100CNS/SG is optim ized for

sm 0038 receiver

Abstract: Bookham Technology Bookham P35-1110 NN12 P35-1110-0 P35-1110-1 JWT 4 pin 80IN 15PB 5AG
Contextual Info: MESFET for OPTO Receivers Performance Optimised to provide high gm and low gate leakage Features General purpose amplifier in PIN FET receiver Transimpedance amplifier for wide band PIN FET receiver High gm, typically 45mS Low gate leakage current, typically 10nA at -5 Volts

microwave MARCONI

Abstract: NN12 P35-1110 P35-1110-0 P35-1110-1
Contextual Info: P35-1110 MESFET FOR OPTO RECEIVERS Performance Optimised to provide high gm and low gate leakage Features • • • • • • • General purpose amplifier in PIN FET receiver Transimpedance amplifier for wide band PIN FET receiver High gm, typically 45mS

V-10G3-1C24-K

Abstract: ss 211 PT 1132 511c2 V-15G3-1C26-K
Contextual Info: 1132-2012:QuarkCatalogTempNew 9/1/12 12:51 PM Page 1132 POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 12 Snap Action Switches Subminiature Snap Action Switches — SS Series RoHS Stock No. Mfr.’s Type Actuator Type O.F. Max. (gm) R.F. (Min.) (gm) P.T.

Contextual Info: GM71C18160C GM71CS18160CL Semicon Co. .Ltd. 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM 71C S 18160C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM 71C(S) 18160C/CL has realized higher density, higher performance and various

Contextual Info: GM71C16160C GM71CS16160CL Semicon Co. .Ltd. 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM 71C S 16160C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM 71C(S) 16160C/CL has realized higher density, higher performance and various

Contextual Info: GM71C4270A/AL GM71CS4270A/AL GoldStar 262,144 WORDSX16BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM 71C4270A/AL is the new generation dynam ic RAM organized 2 6 2 ,1 4 4 x 1 6 Bit. GM 71C4270A/AL has realized higher density,

356 opto

Abstract: 80In/15pb/5ag P35-1110 NN12 P35-1110-0 P35-1110-1 micro-x 420 bookham
Contextual Info: Data sheet MESFET for OPTO Receivers Features • General purpose amplifier in PIN FET receiver Performance Optimised to provide high gm • Transimpedance amplifier for wide band PIN FET receiver and low gate leakage • High gm, typically 45mS • Low gate leakage current,

Contextual Info: GM71V18160C GM71VS18160CL Semicon Co. .Ltd. 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM 71V S 18160C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM 71V(S) 18160C/CL has realized higher density, higher performance and various

kv 2185

Contextual Info: L SERIES FRAMES FRAME J Metal Backshell Plug Hooded connector with round cable clamp Alternate cable clamp locations available .492 (12.50) 2.087 (53.00) .236 (6.00) Plus X Weight, excluding modules Plug — 3.5 oz. (99.0 gm) @ 4 units 5.5 oz. (156.6 gm) @ 20 units

Contextual Info: GMM7374210CNS/SG-6/7/8 L G S e m ic o n C o .,L t d . Description The GM M 7374210CNS/SG is a 4M x 36 bits Dynamic RAM MODULE which is assembled 9 pieces o f 4M x 4bit EDO DRAMs in 24 26 pin SOJ package on the printed circuit board with decoupling capacitors. The GM M 7374210CNS/SG is

227945-5

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 —»— RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC REVISIONS DIST AJ ALL RIGHTS RESERVED. LTR DESCRIPTION OWN DATE REDRAW & REMOVE ZINC, OS14 - 0 0 6 6 - 0 3 APVD GM GM 04MAR03 REF PLANE D D

Contextual Info: 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 7 RELEASED FOR PUBLICATION BY TYCO ELECTRONIC5 CORPORATION. DIST LOC ALL RIGHTS RESERVED. REVISIONS 16 AJ LTR DESCRIPTION K DATE PER EC 0514-0151-04 OWN APVD GM GM 04DEC04 D D 1 . SEE SEE I. S. 2028-1 SEPERATE SAME AS

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

Contextual Info: LG S e m ic o o GM71C17800C GM71CS17800CL C o, 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM Description Features The GM 71C S 17800C/CL is the new generation dynamic RAM organized 2,097,152 x 8 bit. GM 71C(S) 17800C/CL has realized higher density, higher performance and various