5v laser diode
Abstract: No abstract text available
Text: GN8061 GaAs MMICs GN8061 GaAs IC Unit : mm 8 High-speed switching 2 7 ● High output 3 6 Pulse current and DC bias current can be controlled. 4 5 M Di ain sc te on na tin nc ue e/ d ● 0.7min. 6.4±0.2 4.5max. 4.0max. 1.3typ. 1 ● 10max. 2.54±0.25 • Features
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GN8061
10max.
5v laser diode
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VIB-10
Abstract: 2SD874 GN8061 MA3068 8 pin 5v power supply ic TA 7622
Text: GN8061 GaAs MMICs GN8061 GaAs IC Unit : mm 8 High-speed switching 2 7 ● High output 3 6 Pulse current and DC bias current can be controlled. 4 5 ● 0.7min. 6.4±0.2 4.5max. 4.0max. 1.3typ. 1 ● 10max. 2.54±0.25 • Features 0.5 For semiconductor laser drive
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GN8061
10max.
35max.
100mA
VIB-10
2SD874
GN8061
MA3068
8 pin 5v power supply ic
TA 7622
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2SD874
Abstract: GN8061 MA3068
Text: GN8061 GaAs MMICs GN8061 GaAs IC Unit : mm 1 8 2 7 M Di ain sc te on na tin nc ue e/ d High-speed switching ● High output 6 Pulse current and DC bias current can be controlled. 4 5 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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GN8061
10max.
2SD874
GN8061
MA3068
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MN1873287
Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Text: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>
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MN101C01C
MN15224
MN101C01D
MN15226
MN101C027
MN15261
MN101C03A
MN101C38A
MN15263
MN101C06D
MN1873287
an6512n
2sk3190
MN171202
mn158413
mn15142
mn187164
mn6740
AN7210
MN15283
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Untitled
Abstract: No abstract text available
Text: Panasonic GaAs MMICs GN8061 GaAs 1C Unit : mm For semiconductor laser drive • Features • High-speed switching • High output • Pulse current and DC bias current can be controlled. Ta = 25°C ■ Absolute Maximum Ratings Parameter Symbol Rating 6 V DD
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GN8061
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gn1015
Abstract: GN1021 GN1041 GN101
Text: GaAs MMIC Microwave Monolithic IC # For Amplifiers Type No. NF (dB) PG (dB) Measuring Condition Q -— >D i Application • U/V CATV Wide Band Amp. Buffer Amp. SHF IF Amp. Idd (mA) Circuit Construction Package f(MHz) No. GN1010 2.0 9 3 25 100 - 2000 FET one-stage amp. (with band control pin)
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GN1010
GN1015
GN1041
GN1044
GN1021
GN1022
GN101
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transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
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N12861
N13801
MN1381
N13811
N13821
N150402
15P0802
N150412
MN15151
MN152121
transistor a2160
transistor A1270
A1270 transistor
transistor 2sD 4515
1431T transistor
transistor A769
mini circuits 15542
A1270 Y
AN 5606K
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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1020G
N12861
N12B62
MN1381
MN13811
MN13821
15P0802
15P5402
58851A
70803A
3866S
transistor a999
bs 7818 -1995
transistor tt 2206
A999 transistor
TT 2206 transistor
a1535A
8340UAS
transistor 3866S
2SD 4515
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k3025
Abstract: K3192 k3047 K2538 k2960 K2923 K3035 K3165 K3028 k2576
Text: GaAs MMIC Microwave Monolithic IC # For Amplifiers U /V CATV Wide Band Amp. Buffer Amp. Type No. NF (dB) PG (dB) Measuring Condition Circuit Configuration O .—. > ^ Application (mA) GN1010 2.0 9 3 25 100 to 2000 GN1042 2.2 10 3 40 50 to 800 GN1044 1.8
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GN1010
GN1042
GN1044
GN8061
GN8062
01076B
N01077N
01087B
01091B
01093B
k3025
K3192
k3047
K2538
k2960
K2923
K3035
K3165
K3028
k2576
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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2SD874
Abstract: GN8061 MA3068 Panasonic LP
Text: Panasonic GaAs MMICs G N 8061 G aA s 1C For semiconductor laser drive U nit : m m • Features • High-speed switching • High output • Pulse current and DC bias current can be controlled. ■Absolute Maximum Ratings Ta = 25°C P aram eter S ym bol R ating
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GN8061
100mA
2SD874
GN8061
MA3068
Panasonic LP
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K614
Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Text: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)
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2SK662
2SK1103
2SJ163
2SK198
2SK374
2SK123
2SK1216
2SK1842
2SJ164
2SK301
K614
K 1833
2SK 129 A
gn1015
2SK1257 equivalent
2SK1962
2sk 170 Pin
GN1021
IC STK411-220E CIRCUIT
K996
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