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    GPS05605 Search Results

    GPS05605 Datasheets Context Search

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    726-BGA622H6820

    Abstract: marking BXs SOT343 lna Germanium power
    Text: D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG,


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    PDF 14GHz, BGA622 GPS05605 OT343 726-BGA622H6820 H6820 marking BXs SOT343 lna Germanium power

    BGA614

    Abstract: GPS05605 T056
    Text: Data sheet, BGA614, Nov. 2003 BGA 614 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC S ec ur e M obile S o l u ti o n s Silico n Discre te s N e v e r s t o p t h i n k i n g . Edition 2003-11-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


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    PDF BGA614, D-81541 GPS05605 BGA614 GPS05605 T056

    BFP420 application notes

    Abstract: BFP420 BGB420 bgb420 application note GPS05605 GMA marking RF NPN power transistor 2.5GHz
    Text: BGB420, Nov. 2000 BGB 420 Active Biased Transistor MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-11-28 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2000.


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    PDF BGB420, D-81541 BGB420 BGB420 BFP420. GPS05605 BFP420 application notes BFP420 bgb420 application note GPS05605 GMA marking RF NPN power transistor 2.5GHz

    CHIP T502 S

    Abstract: JS 08321 BR 8050 CHIP T502 P BFP420 BGB420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN
    Text: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001


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    PDF BGB420, D-81541 BGB420 BGB420 BFP420. GPS05605 CHIP T502 S JS 08321 BR 8050 CHIP T502 P BFP420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN

    INFINEON marking amplifier

    Abstract: Germanium Power Diodes Infineon Technologies transistor 4 ghz BGA612 GPS05605 JESD22-A114 Germanium power
    Text: D a t a S h e e t , R e v . 2 . 1 , A p r i l 2 00 8 B G A 6 12 S i l i c on G e r m a n i u m B r o a d b a n d M M IC A m pl i f i e r S m a l l S i g n a l D i s c r et e s Edition 2008-04-24 Published by Infineon Technologies AG, 81726 München, Germany


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    PDF BGA612 GPS05605 OT343 INFINEON marking amplifier Germanium Power Diodes Infineon Technologies transistor 4 ghz BGA612 GPS05605 JESD22-A114 Germanium power

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA616 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!


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    PDF BGA616 GPS05605 OT343

    transistor SMD MARKING CODE 772

    Abstract: smd Transistor 1117 marking code 933 SMD Transistor SMD CODE MARKING 1046 SMD MARKING CODE WG sot-343 transistor smd code 404
    Text: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1


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    PDF P-SOT343-4-1 Q62702-G0116 RN/50 GPS05605 transistor SMD MARKING CODE 772 smd Transistor 1117 marking code 933 SMD Transistor SMD CODE MARKING 1046 SMD MARKING CODE WG sot-343 transistor smd code 404

    T0-56

    Abstract: No abstract text available
    Text: P r e l i m in a r y d a t a s h e e t , B G A 6 1 4 , N o v . 2 0 0 1 BGA 614 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-11-14 Published by Infineon Technologies AG,


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    PDF D-81541 GPS05605 T0-56

    GPS05605

    Abstract: BGA622 Germanium power
    Text: D a t a S he et , R e v . 2 . 1 , J u l y 2 00 7 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2007-07-06 Published by Infineon Technologies AG, 81726 München, Germany


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    PDF 14GHz, BGA622 GPS05605 OT343 GPS05605 BGA622 Germanium power

    T056

    Abstract: bga616 GPS05605 Germanium power
    Text: P r e l i m i n a ry d a t a s h e e t , B G A 6 1 6 , J u ly 2 0 0 1 BGA 616 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-13 Published by Infineon Technologies AG,


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    PDF D-81541 GPS05605 T056 bga616 GPS05605 Germanium power

    transistor s11 s12 s21 s22

    Abstract: SMD MARKING CODE WG sot-343 smd marking 1331 sot 6943-3 SMD TRANSISTOR 701 325 diode din 4147 GPS05605 marking code s22 smd marking s22 cfh marking
    Text: P-HEMT CFH 800 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz • Suitable for PCS CDMA and UMTS applications F = 0.52 dB; GA = 15.2 dB @ 3 V; 20 mA; f = 1.8 GHz • Low cost miniature package P-SOT343-4-1


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    PDF P-SOT343-4-1 RN/50 GPS05605 transistor s11 s12 s21 s22 SMD MARKING CODE WG sot-343 smd marking 1331 sot 6943-3 SMD TRANSISTOR 701 325 diode din 4147 GPS05605 marking code s22 smd marking s22 cfh marking

    BGA612

    Abstract: GPS05605
    Text: P r e l i m i n a ry d a t a s h e e t , B G A 6 1 2 , J u ly 2 0 0 1 BGA 612 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-16 Published by Infineon Technologies AG,


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    PDF D-81541 GPS05605 BGA612 GPS05605

    INFINEON package PART MARKING

    Abstract: Germanium power
    Text: Data Sheet, Dec. 2002 BGA 622 Silicon Germanium W id e Ba n d L o w N o i s e A m p l i f ie r W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2002-12-18 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany


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    PDF 14GHz, GPS05605 INFINEON package PART MARKING Germanium power

    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


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    PDF D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download

    Untitled

    Abstract: No abstract text available
    Text: D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG,


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    PDF 14GHz, BGA622 GPS05605 OT343

    A01 MMIC

    Abstract: No abstract text available
    Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA614 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!


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    PDF BGA614 neares20 GPS05605 OT343 A01 MMIC

    BGA614

    Abstract: GPS05605
    Text: P r e l i m in a r y d a t a s h e e t , B G A 6 1 4 , Ma y 2 0 0 2 BGA 614 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2002-05-27 Published by Infineon Technologies AG,


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    PDF D-81541 GPS05605 BGA614 GPS05605

    GPS05605

    Abstract: MMIC marking code R Germanium power
    Text: P r e l i m in a r y d a t a s h e e t , B G A 6 2 2 , S e p t . 2 0 0 1 BGA 622 Silicon Germanium W id e Ba n d L o w N o i s e A m p l i f ie r MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-09-25 Published by Infineon Technologies AG,


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    PDF D-81541 GPS05605 GPS05605 MMIC marking code R Germanium power

    Germanium power

    Abstract: No abstract text available
    Text: P r e l i m i n a ry d a t a s h e e t , B G A 6 1 4 , J u ly 2 0 0 1 BGA 614 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-16 Published by Infineon Technologies AG,


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    PDF D-81541 GPS05605 Germanium power

    INFINEON package PART MARKING

    Abstract: BGA622
    Text: Preliminary data sheet, BGA622, Aug. 2002 BGA622 Silicon Germanium Wide Band Low Noise Amplifier MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-08-08 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München


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    PDF BGA622, BGA622 D-81541 14GHz, GPS05605 INFINEON package PART MARKING BGA622

    RF POWER TRANSISTOR NPN 3GHz

    Abstract: NPN marking MCs 1741 transistor equivalent table BGB540-Chip BFP540 spice
    Text: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , A u g . 2 0 0 1 BGB 540 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-16 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


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    PDF D-81541 BGB540 BGB540 BFP540. GPS05605 RF POWER TRANSISTOR NPN 3GHz NPN marking MCs 1741 transistor equivalent table BGB540-Chip BFP540 spice

    IN5048

    Abstract: Germanium Power Devices BGA614 Germanium Amplifier
    Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA614 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!


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    PDF BGA614 GPS05605 OT343 IN5048 Germanium Power Devices BGA614 Germanium Amplifier

    BFP540

    Abstract: Transistor BFP540 BGB540 GPS05605 T0559
    Text: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , D e c . 2 0 0 0 y BGB 540 li m in ar Active Biased Transistor P re MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-12-04 Published by Infineon Technologies AG,


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    PDF D-81541 BGB540 BGB540 BFP540. GPS05605 BFP540 Transistor BFP540 GPS05605 T0559

    T056

    Abstract: BGA614 GPS05605 Germanium power
    Text: P r e l i m in a r y d a t a s h e e t , B G A 6 1 4 , A u g . 2 0 0 1 BGA 614 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-02 Published by Infineon Technologies AG,


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    PDF D-81541 GPS05605 T056 BGA614 GPS05605 Germanium power