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    BTS117TC

    Abstract: HITFET GPT09085 PG-TO263-3-2
    Text: Smart Low Side Power Switch HITFET BTS 117TC Features Product Summary • Logic Level Input Drain source voltage VDS 60 • Input Protection ESD On-state resistance RDS(on) 100 mΩ •=Thermal shutdown with latch Current limit I D(lim) 7 A • Overload protection


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    PDF 117TC BTS117TC HITFET GPT09085 PG-TO263-3-2

    HITFET

    Abstract: GPT09085 PG-TO263-3-2
    Text: Smart Low Side Power Switch HITFET BTS 133TC Product Summary Features Drain source voltage 60 V • Logic Level Input VDS On-state resistance 50 mΩ • Input Protection ESD RDS(on) Current limit 21 A •=Thermal shutdown with latch I D(lim) Nominal load current


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    PDF 133TC HITFET GPT09085 PG-TO263-3-2

    21n50c3

    Abstract: TRANSISTOR SMD 2x t AN-TO220-3-31-01 S4565 s4585 SPA21N50C3 SPB21N50C3 SPI21N50C3 SPP21N50C3 21N50C
    Text: Preliminary data SPP21N50C3, SPB21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31


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    PDF SPP21N50C3, SPB21N50C3 SPI21N50C3, SPA21N50C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 21n50c3 TRANSISTOR SMD 2x t AN-TO220-3-31-01 S4565 s4585 SPA21N50C3 SPB21N50C3 SPI21N50C3 SPP21N50C3 21N50C

    TLE7274-2D

    Abstract: 431 regulator
    Text: TLE7274-2 5-V Low Dropout Voltage Regulator TLE7274-2E TLE7274-2D TLE7274-2G Data Sheet Rev. 1.01, 2011-11-30 Automotive Power 5-V Low Dropout Voltage Regulator 1 TLE7274-2 Overview Features • • • • • • • • • Ultra Low Current Consumption 20 A


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    PDF TLE7274-2 TLE7274-2E TLE7274-2D TLE7274-2G PG-SSOP-14 TLE7274-2 431 regulator

    141TC

    Abstract: BTS141TC HITFET GPT09085 PG-TO263-3-2
    Text: Smart Low Side Power Switch HITFET BTS 141TC Features Product Summary • Logic Level Input Drain source voltage VDS 60 V • Input Protection ESD On-state resistance RDS(on) 28 mΩ •=Thermal shutdown with latch Current limit I D(lim) 25 A • Overload protection


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    PDF 141TC 141TC BTS141TC HITFET GPT09085 PG-TO263-3-2

    DIN 6784

    Abstract: P-TO218-AA P-DSO-8-6 SMD transistor 2x sot 23 GPT09050 GPT09051 GPT09244 P-TO251-3-1 GPT05155 GPT05156
    Text: Gehäusemaßbilder Package Outlines Gehäusemaßbilder Package Outlines Maße in mm, wenn nicht anders angegeben (Dimensions in mm, unless otherwise specified) P-DSO-8-6/-7 Gewicht etwa 0.15 g Approx. weight 0.15 g 4 1 Bild 16 Figure 16 P-TO218-AA (P-TO218-2-1)


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    PDF P-TO218-AA P-TO218-2-1) GPT05156 GPT05158 O-92-E6288 GPT05548 DIN 6784 P-TO218-AA P-DSO-8-6 SMD transistor 2x sot 23 GPT09050 GPT09051 GPT09244 P-TO251-3-1 GPT05155 GPT05156

    DIN 6784

    Abstract: P-DIP-6 GPT09085 GPT05157 GPT05158 GPT05548 GPT09050 GPT09051 GPT05155 GPT05156
    Text: Gehäusemaßbilder Package Outlines Gehäusemaßbilder Package Outlines Maße in mm, wenn nicht anders angegeben (Dimensions in mm, unless otherwise specified) P-DIP-6 1 Bild 1 Figure 1 4.2 max. 3.5 -0.2 P-DIP-6 Option 6 0.5 min. 1 min. 3.5 ±0.3 2.54 0.45 +0.1


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    PDF GPT09085 O-220-3-1 GPT05155 DIN 6784 P-DIP-6 GPT09085 GPT05157 GPT05158 GPT05548 GPT09050 GPT09051 GPT05155 GPT05156

    04N50C3

    Abstract: TRANSISTOR SMD MARKING CODE 2x SPA04N50C3 04N50 application note AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 2x I 04n50c TRANSISTOR SMD 2X K TRANSISTOR SMD 2x t SPB04N50C3
    Text: Preliminary data SPP04N50C3, SPB04N50C3 SPA04N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2


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    PDF SPP04N50C3, SPB04N50C3 SPA04N50C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N50C3 04N50C3 TRANSISTOR SMD MARKING CODE 2x SPA04N50C3 04N50 application note AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 2x I 04n50c TRANSISTOR SMD 2X K TRANSISTOR SMD 2x t SPB04N50C3