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    Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFZ44/45 IRFZ40/42 QD124SD TES ■ SIIGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure


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    PDF IRFZ44/45 IRFZ40/42 QD124SD IRFZ44 IRFZ40 IRFZ45 GQ12454