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    GRM1882C1H100 Price and Stock

    Murata Manufacturing Co Ltd GRM1882C1H100JA01D

    CAPACITOR, CERAMIC, MULTILAYER, 50V, CH, 0.00001UF, SURFACE MOUNT, 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components GRM1882C1H100JA01D 29,264
    • 1 $0.9
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    • 100 $0.9
    • 1000 $0.9
    • 10000 $0.1575
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    TTI GRM1882C1H100JA01D Reel 4,000
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    ComSIT USA GRM1882C1H100JA01D 48,000
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    Murata Manufacturing Co Ltd GRM1882C1H100JZ01D

    CAPACITOR, CERAMIC, MULTILAYER, 50 V, CH, 0.00001 UF, SURFACE MOUNT, 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components GRM1882C1H100JZ01D 2,360
    • 1 $0.15
    • 10 $0.15
    • 100 $0.0675
    • 1000 $0.045
    • 10000 $0.045
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    muRata GRM1882C1H100JA01D

    MLCC 0603 (1,6 x 0,8 x 0,8 mm) 10pF 50V CH (JIS) ±5% (J)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Gudeco Elektronik GRM1882C1H100JA01D 4,000
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    GRM1882C1H100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM1882C1H100JA01p 0603, CH, 10pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging


    Original     		GRM1882C1H100JA01p 50Vdc) 180mm 330mm 60ppm/ 50Vdc PDF

    Untitled

    Abstract: No abstract text available
    Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM1882C1H100JA01p 0603, CH, 10pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging


    Original     		GRM1882C1H100JA01p 50Vdc) 180mm 330mm 60ppm/ 50Vdc PDF

    Untitled

    Abstract: No abstract text available
    Text: Capacitors > Monolithic Ceramic Capacitors > Soldering Electrode GRM15/18/21/31 Data Sheet Monolithic Ceramic Capacitors GRM1882C1H100JA01p 0603, CH, 10pF, 50Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.60mm±0.10mm Code


    Original     		GRM15/18/21/31 GRM1882C1H100JA01p 50Vdc) 180mm 330mm 60ppm/ 50Vdc PDF

    RD07MUS2B

    Abstract: Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-039-A Date : 10th Oct. ‘08 Rev.date : 30th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V


    Original     		AN-900-039-A RD07MUS2B 763-870MHz RD07MUS2B: 084YH-G" RD07MUS2B 870MHz 250mA characteristic1JA01 GRM1882C1H101JA01 Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M PDF

    GRM1882C1H100JA01D

    Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V


    Original     		AN-900-040-A RD01MUS1 RD07MUS2B 763-870MHz RD07MUS2B: 086ZE-G" RD01MUS1: RD07MUS2B 250mA GRM1882C1H100JA01D GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D PDF

    ATC100A101JW

    Abstract: ATC100A1R8BW ATC100A240JW GRM31CR72A105KA01 ATC100A270JW NE5531079A-T1-A ne5531
    Text: SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology


    Original     		NE5531079A NE5531079A HS350-P3 WS260 IR260 PU10752EJ01V0DS ATC100A101JW ATC100A1R8BW ATC100A240JW GRM31CR72A105KA01 ATC100A270JW NE5531079A-T1-A ne5531 PDF

    Untitled

    Abstract: No abstract text available
    Text: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency


    Original     		EGN21C105I2D 14GHz 14GHz 25deg /-10MHz 45dBm PDF

    EGN26C070I2D

    Abstract: No abstract text available
    Text: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		EGN26C070I2D 25deg /-10MHz EGN26C070I2D PDF

    GRM42-6CH

    Abstract: GRM39F104Z25 GRM1885C1H100JA01B GRM39F104Z GRM188R60J105KA01B grm219b31a GRM39CH GRM40F104Z50 GRM40X7R104K50 GRM188F11C105Z
    Text: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage


    Original     		GHM1030R101K1K GHM1030R101K630 GHM1030R102K630 GHM1030R151K1K GHM1030R151K630 GHM1030R221K1K GHM1030R221K630 GHM1030R331K1K GHM1030R331K630 GHM1030R470K1K GRM42-6CH GRM39F104Z25 GRM1885C1H100JA01B GRM39F104Z GRM188R60J105KA01B grm219b31a GRM39CH GRM40F104Z50 GRM40X7R104K50 GRM188F11C105Z PDF

    B4846

    Abstract: S21 Package GRM188B11H102KA01D CS3376C
    Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		14GHz EGN21C105I2D /-10MHz 45dBm /-10MHz B4846 S21 Package GRM188B11H102KA01D CS3376C PDF

    GRM0222C1C330GD05

    Abstract: No abstract text available
    Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.


    Original     		GRM55DR72E334KW01# GRM55DR72E474KW01# GRM55DR72E684KW01# GRM55DR72E105KW01# GRM55DR72D334KW01# GRM55DR72D474KW01# GRM55DR72D684KW01# 200Vdc 250Vdc GRM55DR72D105KW01# GRM0222C1C330GD05 PDF

    Untitled

    Abstract: No abstract text available
    Text: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		EGN21C160I2D 14GHz 25deg /-10MHz PDF

    GRM1882C1H100J

    Abstract: No abstract text available
    Text: SGN27C210I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.0dBm typ. @ Psat High Efficiency: 62%(typ.) @ Psat Power Gain : 16.3dB(typ.) @ f=2.655GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		SGN27C210I2D 655GHz /-10MHz 48dBm GRM1882C1H100J PDF

    saw Colpitts circuit design

    Abstract: murata marking code for resonators murata saw SARCC315M00BX SARCC433M92BXM0 SARCC433M92 Bandpass filter SAW 2.4 GHz 50 Ohm 43402 SARCC304M30BXL0 SARCC304M30BXM0
    Text: !Note Please read rating and !CAUTION for storage and operating, rating, soldering and mounting, handling in this PDF catalog to prevent smoking and/or burning, etc. This catalog has only typical specifications. Therefore, you are requested to approve our product specification or to transact the approval sheet for product specificaion before ordering.


    Original     		PDF

    6-10 Ghz RF Power 100w amplifier

    Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
    Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		EGN26C070I2D /-10MHz 6-10 Ghz RF Power 100w amplifier 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114 PDF

    SMD Transistor 1fw

    Abstract: 1FW TRANSISTOR SMD 1FW 43 transistor transistor SMD 12E 1FW smd 1FW 43 smd 1FW transistor 50PIN D-SUB CONNECTORS SMD 1FW 27 1FW 67 transistor
    Text: Intelligent Network Controller for Embedded Systems S1S60020 Evaluation Board Technical Manual S5U1S60K02H0100 Rev. 1.2e NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


    Original     		S1S60020 S5U1S60K02H0100) E-08190 SMD Transistor 1fw 1FW TRANSISTOR SMD 1FW 43 transistor transistor SMD 12E 1FW smd 1FW 43 smd 1FW transistor 50PIN D-SUB CONNECTORS SMD 1FW 27 1FW 67 transistor PDF

    S1S60000

    Abstract: MCR03*J102 resistor motolora
    Text: Intelligent Network Controller for Embedded System S1S60000 Technical Manual S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of SEIKO EPSON. SEIKO EPSON reserves the right to make changes to this material without


    Original     		S1S60000 S1S60000 E-08190 MCR03*J102 resistor motolora PDF

    GRP1552C1H680

    Abstract: GRP1552 GRP1552C1H120JZ01 GRP1552C1H101JD01 GRM1882C1H150JA01 GRP15X4C1H2R0 GRM2192C2A331JZ01 GRM1882C1H8R0DZ01 GRM1882C1H182JA01
    Text: Capacitors Monolithic Ceramic Capacitors Temperature Compensating JIS Temperature Compensating Type 25/50V g e T e L Part Number GRP155 GRM155 GRM188* GRM216 GRM219 GRM21B GRM319 GRM31M GRM31C L W Dimensions mm W T e g min. 1.0 ±0.05 0.5 ±0.05 0.5 ±0.05 0.15 to 0.3


    Original     		25/50V GRP155 GRM155 GRM188* GRM216 GRM219 GRM21B GRM319 GRM31M GRM31C GRP1552C1H680 GRP1552 GRP1552C1H120JZ01 GRP1552C1H101JD01 GRM1882C1H150JA01 GRP15X4C1H2R0 GRM2192C2A331JZ01 GRM1882C1H8R0DZ01 GRM1882C1H182JA01 PDF

    GRM42-6CH

    Abstract: GRM40C0G103J50 GRM1882C1H8R0DZ01 GRM188F11E104Z GRM39F104Z GRM39X7R473K25 GRM1885C1H391JA01J GRM39U2J100D GRM40X7R104K25 GRM40B106K
    Text: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage


    Original     		GHM1030R101K1K GHM1030R101K630 GHM1030R102K630 GHM1030R151K1K GHM1030R151K630 GHM1030R221K1K GHM1030R221K630 GHM1030R331K1K GHM1030R331K630 GHM1030R470K1K GRM42-6CH GRM40C0G103J50 GRM1882C1H8R0DZ01 GRM188F11E104Z GRM39F104Z GRM39X7R473K25 GRM1885C1H391JA01J GRM39U2J100D GRM40X7R104K25 GRM40B106K PDF

    toshiba lcd power board schematic

    Abstract: led lcd inverter schematic alps touch screen S5U13U11P00C100 GRM155B31C104K s1d13u11 toshiba lcd inverter pinout GRM188F11C105ZA01 CCFL inverter pinout toshiba 20X2 LCD DISPLAY PINOUT toshiba
    Text: S1D13U11 Display Controller S5U13U11 Evaluation Board User Manual SEIKO EPSON CORPORATION Rev. 1.1 Evaluation board/kit and Development tool important notice 1. This evaluation board/kit or development tool is designed for use for engineering evaluation, demonstration, or development purposes only. Do not use it for other purpose. It is not intended to meet the requirement of design for finished product.


    Original     		S1D13U11 S5U13U11 X96A-G-001-01 toshiba lcd power board schematic led lcd inverter schematic alps touch screen S5U13U11P00C100 GRM155B31C104K toshiba lcd inverter pinout GRM188F11C105ZA01 CCFL inverter pinout toshiba 20X2 LCD DISPLAY PINOUT toshiba PDF

    2S110

    Abstract: GRM188B11H102KA01D
    Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		EGN26C070I2D /-10MHz /-10MHz 2S110 GRM188B11H102KA01D PDF

    EKZE101

    Abstract: No abstract text available
    Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		14GHz EGN21C210I2D /-10MHz 48dBm /-10MHz EKZE101 PDF

    GRM1882C1H100J

    Abstract: No abstract text available
    Text: EGN16C105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain :19dB(typ.) @ f=1.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		EGN16C105MK 25deg D10MHz 45dBm /-10MHz GRM1882C1H100J PDF

    NE5531079A-T1-A

    Abstract: ldmos nec
    Text: DATA SHEET SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a


    Original     		NE5531079A NE5531079A NE5531079A-T1-A ldmos nec PDF