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    GRM36X7R103K16 Price and Stock

    Murata Manufacturing Co Ltd GRM36X7R103K160641

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    Onlinecomponents.com GRM36X7R103K160641 58,367
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    • 10000 $0.0182
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    Murata Manufacturing Co Ltd GRM36X7R103K16PT

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 16V, 10% +TOL, 10% -TOL, X7R, 15% TC, 0.01UF, SURFACE MOUNT, 0402
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    Quest Components GRM36X7R103K16PT 5,000
    • 1 $0.048
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    Murata Manufacturing Co Ltd GRM36X7R103K16

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    Quest Components GRM36X7R103K16 160
    • 1 $1.2755
    • 10 $1.2755
    • 100 $0.6378
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    Murata Manufacturing Co Ltd GRM36X7R103K16D500

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    Component Electronics, Inc GRM36X7R103K16D500 10,000
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    GRM36X7R103K16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3296 Variable Resistor terminals BOURNS

    Abstract: GRM42-6COG* murata GRM36COG560J50 GRM36COG101J50 GRM36COG100D50 GRM36COG010C50 617PT1026 murata frequency mixer gsm GRM42-6Y5V105 GRM42-6COG
    Text: TRF1020 GSM RECEIVER SLWS028B – MAY 1998 – REVISED SEPTEMBER 1998 D D D D D Operates from 2.75 V to 3.5 V Supply Low Current Consumption Low Profile Package: 48-pin Plastic Quad Flat Package PQFP Global System for Mobile Communications (GSM), Class 3, 4, or 5 Mobile Station (MS)


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    PDF TRF1020 SLWS028B 48-pin 3296 Variable Resistor terminals BOURNS GRM42-6COG* murata GRM36COG560J50 GRM36COG101J50 GRM36COG100D50 GRM36COG010C50 617PT1026 murata frequency mixer gsm GRM42-6Y5V105 GRM42-6COG

    AWT1921S11

    Abstract: AWT921 SSOP-28
    Text: AWT921 Integrated High Power Amp 900 MHz PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • • • • • • High output power levels High Efficiency True Surface Mount Package with Integrated Heat Slug Internal Bias Circuit Requiring Nominal Input Voltages +10% Low Cost


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    PDF AWT921 SSOP-28 AWT921 AWT1921S11 SSOP-28

    cdma Booster schematic

    Abstract: GRM36cog270J50 GRM36cog330j50 AWT1921 AWT1921S11 SSOP-28 ATC100A4R7CW150X
    Text: AWT1921S11 A Integrated High Power Amp 1610 MHz Advanced Product information Rev 4 DESCRIPTION The AWT1921 is a four stage monolithic amplifier for use in communication systems that require high gain and output intercept point. The device has been specifically designed for fixed satellite access


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    PDF AWT1921S11 AWT1921 SSOP-28 10ICS, cdma Booster schematic GRM36cog270J50 GRM36cog330j50 AWT1921S11 SSOP-28 ATC100A4R7CW150X

    AWT1922S11

    Abstract: GRM36cog270J50 gsm signal Booster FSF52 4604 mosfet BARNES ENGINEERING LA 20-PB WARTH C695 cdma booster circuit diagram
    Text: AWT1922 Application Note Integrated High Power Amplifier for PCS Multi Carrier and Micro Cell Base Station Application Rev. 0 INTRODUCTION This application note describes the use of ANADIGICS AWT1922 IHPA Integrated High Power Amplifier for PCS multi carrier and


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    PDF AWT1922 GRM36COG270J50 GRM36X7R103K16 GRM36COG330J50 ATC100A110JW150X GRM36X7R331K50 AWT1922S11 GRM36cog270J50 gsm signal Booster FSF52 4604 mosfet BARNES ENGINEERING LA 20-PB WARTH C695 cdma booster circuit diagram

    GRM36COG470J50

    Abstract: AWT921 AWT921S11 SSOP-28 ferrite sheet panasonic A2 RFC 8-pin TX30D ATC100A110JW150X
    Text: AWT921 Integrated High Power Amp 900 MHz PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • • • • • • High output power levels High Efficiency True Surface Mount Package with Integrated Heat Slug Internal Bias Circuit Requiring Nominal Input Voltages +10%


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    PDF AWT921 SSOP-28 AWT921 GRM36COG470J50 AWT921S11 SSOP-28 ferrite sheet panasonic A2 RFC 8-pin TX30D ATC100A110JW150X

    K 2645 transistor

    Abstract: k 2645 GRM36COG470J50 bk2125 K 2645 schematic circuit FR411 1431 T AWT921 AWT921S11 SSOP-28
    Text: AWT921 Integrated High Power Amp 900 MHz PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • • • • • • High output power levels High Efficiency True Surface Mount Package with Integrated Heat Slug Internal Bias Circuit Requiring Nominal Input Voltages +10%


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    PDF AWT921 SSOP-28 AWT921 K 2645 transistor k 2645 GRM36COG470J50 bk2125 K 2645 schematic circuit FR411 1431 T AWT921S11 SSOP-28

    GRM36C0G030C50

    Abstract: GRM36X7R102K50 THM1001TE GRM36C0G100D50 GRM36C0G010C50
    Text: THM1001TE SiGe HBT MMIC POWER AMPLIFIER Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the THM1001TE is designed for 2.4GHz wireless applications including Bluetoothtm Class 1 wireless technology and 2.4GHz cordless telephone applications. It delivers +23 dBm output


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    PDF THM1001TE THM1001TE THM1001TE, 200um 220um GRM36C0G030C50 GRM36X7R102K50 GRM36C0G100D50 GRM36C0G010C50

    grm36x7r102k50

    Abstract: 9635 GRM36C0G100D50 LQP11A3N9C00 TARF2105 grm39 GRM36C0G010C50
    Text: PRELIMINARY TARF2105 SiGe HBT MMIC POWER AMPLIFIER Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the TARF2105 is designed for 2.4GHz wireless applications including Bluetoothtm Class 1 wireless technology and 2.4GHz cordless telephone applications. It delivers +23 dBm output


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    PDF TARF2105 TARF2105 TARF2105, 818Fax 818Page grm36x7r102k50 9635 GRM36C0G100D50 LQP11A3N9C00 grm39 GRM36C0G010C50

    murata lot no

    Abstract: C92 diode lot No murata resistor 0402 GRM36COG1R6B50 C91 diode
    Text: MAX2291 Korea PCS NCDMA EV Board BILL OF MATERIAL Date:5/11/01 BOM REV: 1.0 SCHEMATIC REV: BOARD REV: P5, Layout#4 DESIGNATION C90 QTY 1 C91 1 C92 1 C17, C46, C47, C50, L8, L12, D1, R2, IN4SMA C48 C49 C52 C56, C66 C45, C54, C57, C64 C62 C58 C65 9 D1 L9 L11


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    PDF MAX2291 ATC100A4R7BW150XB ATC100A020BW150XB GRM36COG1R6B50 470pF GRM36X7R471K50 GRM36COG6R8B50 GRM36COG1R6B50 murata lot no C92 diode lot No murata resistor 0402 C91 diode

    cdma Booster schematic

    Abstract: SSOP-28 AWT1921 AWT1921S11 R4-2200
    Text: AWT1921 Integrated High Power Amp 1610 MHz PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • • • • • • High Output Intercept Point High Linearity True Surface Mount Package Internal Bias Circuit Requiring Nominal Input Voltages + 10% Low Cost Off Chip Output Matching Circuit Allows


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    PDF AWT1921 AWT1921 SSOP-28 cdma Booster schematic SSOP-28 AWT1921S11 R4-2200

    diode R17 SMA

    Abstract: C91 diode GRM36X7R471K50 HP 437B a5 gnd 22pf capacitor Maxim MAX2291 GRM36X7R103K16 C92 diode ATC100A1R8BW150XB
    Text: 19-2027; Rev 1; 3/04 MAX2291 Evaluation Kit The MAX2291 evaluation kit EV kit simplifies evaluation of the MAX2291 power amplifier (PA). It enables testing of the device’s RF performance and requires no additional support circuitry. The EV kit’s signal inputs


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    PDF MAX2291 MAX2291 diode R17 SMA C91 diode GRM36X7R471K50 HP 437B a5 gnd 22pf capacitor Maxim MAX2291 GRM36X7R103K16 C92 diode ATC100A1R8BW150XB

    GRM36cog270J50

    Abstract: GRM36X7R331K50
    Text: AWT 1922 Integrated High Power Amp 1900 MHz Advanced Product information Rev 3 DESCRIPTION The AWT1922 is a four stage monolithic amplifier for use in communication systems, which require high gain and output intercept point. This device has been specifically designed for PCS multi carrier and


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    PDF AWT1922 WT1922 GRM36cog270J50 GRM36X7R331K50

    tzbx4n100bc110

    Abstract: MA2810-1 tz03p450fr LQH3NR27M92 kf 470 replacements transistors RPE110COG2R2C100V LQH3N220K04 DE1410E 1022R DE7100F222MVA1-KC
    Text: DESIGN ENGINEERING KITS ★ KIT-GRM39 CAPACITORS— CHIB M O N O LITH IC • ■ ■ ■ ■ ■ muFfntn Part No. Miniature size Wide capacitance, TC, voltage and tolerance range Industry standard sizes 8mm and 12mm tape and reel for auto-placements Barrier layer termination systems for wave, reflow or vapor phase solder


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    PDF KIT-GRM39 KIT-GRM36 GRM36COG0R5C5Â 3500K 3900K 4250K 4050K 3650K 4100K 4200K tzbx4n100bc110 MA2810-1 tz03p450fr LQH3NR27M92 kf 470 replacements transistors RPE110COG2R2C100V LQH3N220K04 DE1410E 1022R DE7100F222MVA1-KC

    TI921

    Abstract: 45066
    Text: AWT1921 Integrated High Power Amp 1610 MHz Advanced Product information Rev 4 DESCRIPTION The AWT1921 is a four stage monolithic amplifier for use in communication systems that require high gain and output intercept point. The device has been specifically designed for fixed satellite access equipment and handset


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    PDF AWT1921 AWT1921 TI921 TI921 45066