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    GRM39X7R102K50V Search Results

    GRM39X7R102K50V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Solder Paste, Indium 5.8

    Abstract: ECJ-1VB1H102K RMPA1966 SN63 SN96 grm39
    Text: PRELIMINARY RMPA1966 i-Lo tm WCDMA Band II Power Amplifier Module Features General Description • 40% WCDMA efficiency at +28.5dBm Pout The RMPA1966 Power Amplifier Module PAM is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting UMTS/WCDMA/HSDPA


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    RMPA1966 16dBm) 16dBm Solder Paste, Indium 5.8 ECJ-1VB1H102K SN63 SN96 grm39 PDF

    GRM39Y5V104Z16V

    Abstract: No abstract text available
    Text: February 2005 RMPA1963 i-Lo US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module Features General Description • 38% CDMA/WCDMA efficiency at +28 dBm Pout ■ 14% CDMA/WCDMA efficiency 85 mA total current at +16 dBm Pout ■ Linear operation in low-power mode up to +19 dBm


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    RMPA1963 CDMA2000-1X GRM39Y5V104Z16V PDF

    Untitled

    Abstract: No abstract text available
    Text: RMPA2263 i-Lo i L o ™ Features General Description • 40% WCDMA efficiency at +28 dBm Pout The RMPA2263 Power Amplifier Module PAM is Fairchild’s latest innovation in 50 Ohm matched, surface mount modules targeting UMTS/WCDMA/HSDPA applications. Answering the


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    RMPA2263 RMPA2263 PDF

    ECJ-1VB1H102K

    Abstract: RMPA0966
    Text: PRELIMINARY RMPA0966 i-Lo WCDMA Band V Power Amplifier Module tm Features General Description • 42% CDMA/WCDMA efficiency at +28dBm Pout The RMPA0966 Power Amplifier Module PAM is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting Cellular CDMA/WCDMA/HSDPA,


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    RMPA0966 28dBm ECJ-1VB1H102K PDF

    diode 400V 1A SOD-123

    Abstract: 10uF CAPACITOR 1210 PACKAGE GRM39Y5V104Z25V RO4003 600F0R GRM42-6Y5V106Z25V cap 0805 RF capacitor
    Text: TC3741 REV0_20070111 9.5 – 10.5 GHz 2W Single Bias MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 33 dBm ! Small Signal Gain: 11 dB ! Power Added Efficiency: 25 % ! IP3: 42 dBm ! Input/Output 50 Ω Match ! Bias condition: 1100 mA @ 10 V DESCRIPTION The TC3741 is a 2-stage PHEMT Single Bias MMIC power amplifier. It is designed for use in low cost and high


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    TC3741 TC3741 1000PF 600F0R7BT 600F1R0BT GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L OD-123) diode 400V 1A SOD-123 10uF CAPACITOR 1210 PACKAGE GRM39Y5V104Z25V RO4003 600F0R cap 0805 RF capacitor PDF

    RPE113

    Abstract: ACD2203
    Text: ACD2203 CATV/TV/Video Downconverter with Dual Synthesizer PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • • • • • • • • • • Integrated Downconverter Integrated Dual Synthesizer 256 QAM Compatibility Single +5 V Power Supply Operation Low Power Consumption: <0.6 W


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    ACD2203 ACD2203 RPE113 PDF

    CDMA2000-1X

    Abstract: CDMA2000-1XRTT RMPA0959
    Text: RMPA0959 CDMA and CDMA2000-1X Power Amplifier Module General Description Features The RMPA0959 power amplifier module PAM is designed for cellular band AMPS, CDMA and CDMA2000-1X applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a


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    RMPA0959 CDMA2000-1X RMPA0959 CDMA2000-1X 28dBm 31dBm CDMA2000-1XRTT PDF

    GTO MODULE

    Abstract: ECJ-1VB1H102K SN63 SN96 Solder Paste, Indium 5.8
    Text: PRELIMINARY RMPA1766 i-Lo tm WCDMA Band IV Power Amplifier Module Features General Description • 40% WCDMA efficiency at +28dBm Pout The RMPA1766 Power Amplifier Module PAM is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting UMTS/WCDMA/HSDPA


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    RMPA1766 28dBm 16dBm) 16dBm GTO MODULE ECJ-1VB1H102K SN63 SN96 Solder Paste, Indium 5.8 PDF

    CAP 0805 ATC 600F

    Abstract: RO4003 TC3953A
    Text: TC3953A PRE3_20070503 - Preliminary Datasheet - 1W Single-Bias and Prematched GaAs Power PHEMTs using SMT package FEATURES • Prematched for 5~10 GHz • 1W Typical Output Power at 5~10 GHz • 6.5dB Typical Linear Power Gain at 10 GHz PHOTO ENLARGEMENT • High Linearity: IP3 = 40 dBm Typical at 5~10 GHz


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    TC3953A TC3953A 30dBm RO4003 Thickness20 TC39X3_ 1000PF GRM39X7R102K50V 250WVDC) CAP 0805 ATC 600F RO4003 PDF

    GRM39COG

    Abstract: No abstract text available
    Text: ACD2206 CATV/TV/Video Downconverter with Dual Synthesizer Data Sheet - Rev 2.0 FEATURES • • • • • • • • • • Integrated Downconverter Integrated Dual Synthesizer 256 QAM Compatibility Single +5 V Power Supply Operation Low Noise Figure: 8 dB


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    ACD2206 ACD2206 GRM39COG PDF

    ACD2203

    Abstract: No abstract text available
    Text: ACD2203 CATV/TV/Video Downconverter with Dual Synthesizer PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • • • • • • • • • • • Integrated Downconverter Integrated Dual Synthesizer 256 QAM Compatibility Single +5 V Power Supply Operation Low Power Consumption: <0.6 W


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    ACD2203 ACD2203 PDF

    RF MODULE CIRCUIT DIAGRAM for channel 4

    Abstract: CDMA2000-1X CDMA2000-1XRTT RMPA0959
    Text: RMPA0959 CDMA and CDMA2000-1X PowerEdge Power Amplifier Module General Description Features The RMPA0959 power amplifier module PAM is designed for cellular band AMPS, CDMA and CDMA2000-1X applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a


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    RMPA0959 CDMA2000-1X RMPA0959 CDMA2000-1X 28dBm 31dBm RF MODULE CIRCUIT DIAGRAM for channel 4 CDMA2000-1XRTT PDF

    CDMA2000-1X

    Abstract: ECJ-1VB1H102K RMPA1965 GRM39Y5V104Z16V
    Text: RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge Power Amplifier Module Features General Description • Single positive-supply operation with low power and shutdown modes The RMPA1965 power amplifier module PAM is designed for CDMA, CDMA2000-1X, WCDMA and HSDPA personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external


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    RMPA1965 CDMA2000-1X RMPA1965 CDMA2000-1X, ECJ-1VB1H102K GRM39Y5V104Z16V PDF

    CDMA2000-1X

    Abstract: ECJ-1VB1H102K RMPA0966 fairchild microwave power transistor
    Text: November 2005 RMPA0966 i-Lo Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module Features General Description • 42% CDMA/WCDMA efficiency at +28 dBm Pout ■ 21% CDMA/WCDMA efficiency 56 mA total current at +16 dBm Pout ■ Meets HSDPA performance requirements


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    RMPA0966 CDMA2000-1X ECJ-1VB1H102K fairchild microwave power transistor PDF

    GRM39Y5V104Z25V

    Abstract: RO4003
    Text: TC3332 REV2_20070613 3.3 - 4.0 GHz 1W Single Bias MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 30 dBm ! Small Signal Gain: 27 dB ! Power Added Efficiency: 25 % ! IP3: 39 dBm ! Input/Output 50 Ω Match ! Bias condition: 500 mA @ 9 V DESCRIPTION The TC3332 is a 2-stage PHEMT Single Bias MMIC power amplifier. It is designed for use in low cost and


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    TC3332 TC3332 1000PF GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L GRM39Y5V104Z25V RO4003 PDF

    schematic diagram tv panasonic

    Abstract: No abstract text available
    Text: ACD2202 CATV/TV/Video Downconverter with Dual Synthesizer PRELIMINARY DATA SHEET - Rev 1.6 FEATURES • • • • • • • • • • • Integrated Downconverter Integrated Dual Synthesizer 256 QAM Compatibility Single +5 V Power Supply Operation Low Power Consumption: <0.6 W


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    ACD2202 ACD2202 schematic diagram tv panasonic PDF

    PCS6106CT-ND

    Abstract: ERJ-3GSYJ102 RPE113 counter schematic diagram 8 bit counter GRM39COG330J50V GRM39Y5V104Z Diode 1_b SMD
    Text: ACD2202 CATV/TV/Video Downconverter with Dual Synthesizer Data Sheet - Rev 2.0 FEATURES • Integrated Downconverter • Integrated Dual Synthesizer • 256 QAM Compatibility • Single +5 V Power Supply Operation • Low Power Consumption: <0.6 W • Low Noise Figure: 8 dB


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    ACD2202 ACD2202 PCS6106CT-ND ERJ-3GSYJ102 RPE113 counter schematic diagram 8 bit counter GRM39COG330J50V GRM39Y5V104Z Diode 1_b SMD PDF

    CDMA2000-1X

    Abstract: ECJ-1VB1H102K RMPA1965
    Text: RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge Power Amplifier Module Features General Description • Single positive-supply operation with low power and shutdown modes ■ 40% CDMA/WCDMA efficiency at +28 dBm average output power ■ Compact lead-free compliant low-profile package


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    RMPA1965 CDMA2000-1X RMPA1965 ECJ-1VB1H102K PDF

    Untitled

    Abstract: No abstract text available
    Text: RMPA2265 28dBm WCDMA Power Amplifier Module General Description Features The RMPA2265 power amplifier module PAM is designed for WCDMA applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a low-power mode to reduce


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    RMPA2265 28dBm RMPA2265 PDF

    Solder Paste Indium reflow process control

    Abstract: No abstract text available
    Text: April 2005 RMPA1963 i-Lo US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module iL o ™ General Description • 38% CDMA/WCDMA efficiency at +28 dBm Pout The RMPA1963 Power Amplifier Module PAM is Fairchild’s latest innovation in 50 Ohm matched, surface mount modules targeting US-PCS CDMA/WCDMA/HSDPA and Wireless Local


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    RMPA1963 RMPA1963 CDMA2000-1X IS-95/CDMA2000-1XRTT/WCDMA Solder Paste Indium reflow process control PDF

    fairchild 824

    Abstract: No abstract text available
    Text: RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdge Power Amplifier Module Features General Description • Single positive-supply operation with low power and shutdown modes The RMPA0965 power amplifier module PAM is designed for cellular band AMPS, CDMA, CDMA2000-1X, WCDMA and


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    RMPA0965 CDMA2000-1X CDMA2000-1XRTT/WCDMA CDMA2000-1X, fairchild 824 PDF

    RO4003

    Abstract: TC3953
    Text: TC3953 PRE2_20070503 - Preliminary Datasheet 1 W Single-Bias GaAs Power PHEMTs prematched for 5~8 GHz FEATURES • Prematched for 5~8 GHz • 1W of Typical Output Power at 5~8 GHz • 8dB of Typical Linear Power Gain at 8 GHz • High Linearity: IP3 = 40 dBm Typical at 5~8 GHz


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    TC3953 TC3953 RO4003 Thickness20 1000PF GRM39COG0R75C50V GRM39X7R102K50V GRM39COG1R2C50V RO4003 PDF

    Untitled

    Abstract: No abstract text available
    Text: ACD2202 CATV/TV/Video Downconverter with Dual Synthesizer Data Sheet - Rev 2.2 FEATURES • Integrated Downconverter • Integrated Dual Synthesizer • 256 QAM Compatibility • Single +5 V Power Supply Operation • Low Power Consumption: <0.6 W • Low Noise Figure: 8 dB


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    ACD2202 ACD2202 PDF

    TRANSISTOR D 1765

    Abstract: SSG 23 TRANSISTOR CDMA2000-1X ECJ-1VB1H102K RMPA1765 grm39 TRANSISTOR D 1765 320
    Text: RMPA1765 K-PCS, CDMA, CDMA2000-1X and WCDMA Power Edge Power Amplifier Module Features General Description • Single positive-supply operation and low power and shutdown modes ■ 38% CDMA/WCDMA efficiency at +28 dBm average output power ■ Compact lead-free compliant LCC package3.0 x 3.0 x 1.0 mm with industry standard pinout


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    RMPA1765 CDMA2000-1X CDMA2000-1XRTT/WCDMA RMPA1765 TRANSISTOR D 1765 SSG 23 TRANSISTOR ECJ-1VB1H102K grm39 TRANSISTOR D 1765 320 PDF