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    GRM39Y5V104Z25V Search Results

    GRM39Y5V104Z25V Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GRM39Y5V104Z25V Unknown 4.9 - 6 GHz 29dBm MMIC Original PDF

    GRM39Y5V104Z25V Datasheets Context Search

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    ro4003

    Abstract: GRM39C0G102J50V GRM39Y5V104Z25V TC3339 RF Resistor 50 OHM
    Text: TC3339 REV.3_04/18/2005 2.9 - 3.7 GHz 1W MMIC FEATURES • • • • • • P-1 dB: 30 dBm Small Signal Gain: 26 dB Power Added Efficiency: 25 % IP3: 39 dBm Matched to 50 Ω operation Bias condition: 650 mA @ 7 V PHOTO ENLARGEMENT DESCRIPTION The TC3339 is a 2-stage PHEMT MMIC power amplifier. It is designed for use in low cost, high volume,


    Original     		PDF TC3339 TC3339 ro4003 GRM39C0G102J50V GRM39Y5V104Z25V RF Resistor 50 OHM

    diode 400V 1A SOD-123

    Abstract: 10uF CAPACITOR 1210 PACKAGE GRM39Y5V104Z25V RO4003 600F0R GRM42-6Y5V106Z25V cap 0805 RF capacitor
    Text: TC3741 REV0_20070111 9.5 – 10.5 GHz 2W Single Bias MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 33 dBm ! Small Signal Gain: 11 dB ! Power Added Efficiency: 25 % ! IP3: 42 dBm ! Input/Output 50 Ω Match ! Bias condition: 1100 mA @ 10 V DESCRIPTION The TC3741 is a 2-stage PHEMT Single Bias MMIC power amplifier. It is designed for use in low cost and high


    Original     		PDF TC3741 TC3741 1000PF 600F0R7BT 600F1R0BT GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L OD-123) diode 400V 1A SOD-123 10uF CAPACITOR 1210 PACKAGE GRM39Y5V104Z25V RO4003 600F0R cap 0805 RF capacitor

    TC3141

    Abstract: GRM39C0G102J50V GRM39Y5V104Z25V GRM39C0G010C50 GRM39C0G1R5C
    Text: TC3143 REV0_20040402 2.1 - 2.2 GHz 2W MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 33 dBm ! Small Signal Gain: 29 dB ! Power Added Efficiency: 31 % ! IP3: 42 dBm ! DC Bias: 800 mA @ 7 V DESCRIPTION The TC3143 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost and high volume


    Original     		PDF TC3143 TC3143 TC3141 GRM39C0G102J50V GRM39Y5V104Z25V GRM39C0G010C50 GRM39C0G1R5C

    TC3532

    Abstract: GRM39C0G102J50V GRM39Y5V104Z25V RO4003
    Text: TC3532 REV.4_04/12/2004 4.9 - 6 GHz 29dBm MMIC FEATURES • • • • P-1 dB: 29 dBm Small Signal Gain: 21 dB Power Added Efficiency: 25 % • Match to 50 Ω operation Bias condition: 400 mA @ 8 V • PHOTO ENLARGEMENT IP3: 39 dBm DESCRIPTION The TC3532 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost, high volume,


    Original     		PDF TC3532 29dBm TC3532 002MAX GRM39C0G102J50V GRM39Y5V104Z25V RO4003

    GRM39C0G102J50V

    Abstract: GRM39Y5V104Z25V RO4003 TC3538
    Text: TRANSCOM TC3538 Preliminary May 2002 5 ~ 6 GHz 1W MMIC FEATURES • • • • • • P-1 dB: 30 dBm Small Signal Gain: 21 dB Power Added Efficiency: 25 % IP3: 39 dBm Matched to 50 Ω operation Bias condition: 600 mA @ 7 V DESCRIPTION The TC3538 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost, high volume, 5 - 6


    Original     		PDF TC3538 TC3538 GRM39C0G102J50V GRM39Y5V104Z25V RO4003

    a1 mmic

    Abstract: GRM39C0G102J50V GRM39Y5V104Z25V
    Text: TC3139 REV.2_04/12/2004 2.3 - 2.5 GHz 1W MMIC FEATURES • P-1 dB: 30 dBm • Small Signal Gain: 26 dB • Power Added Efficiency: 32 % • IP3: 40 dBm • Matched to 50 Ω operation • Bias condition: 400 mA @ 7 V PHOTO ENLARGEMENT DESCRIPTION The TC3139 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost, high volume,


    Original     		PDF TC3139 TC3139 a1 mmic GRM39C0G102J50V GRM39Y5V104Z25V

    GRM39Y5V104Z25V

    Abstract: RO4003
    Text: TC3332 REV2_20070613 3.3 - 4.0 GHz 1W Single Bias MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 30 dBm ! Small Signal Gain: 27 dB ! Power Added Efficiency: 25 % ! IP3: 39 dBm ! Input/Output 50 Ω Match ! Bias condition: 500 mA @ 9 V DESCRIPTION The TC3332 is a 2-stage PHEMT Single Bias MMIC power amplifier. It is designed for use in low cost and


    Original     		PDF TC3332 TC3332 1000PF GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L GRM39Y5V104Z25V RO4003

    ku vsat amplifier

    Abstract: GRM39C0G102J50V GRM39Y5V104Z25V TC4523 C4 MMIC
    Text: TC4523 PRE1_20040903 13.75 - 14.5 GHz 0.5W MMIC FEATURES ! P-1 dB: 27 dBm ! Small Signal Gain: 28 dB ! IP3: 36 dBm ! Match to 50 Ω Operation ! Bias condition:550 mA @ 7 V PHOTO ENLARGEMENT DESCRIPTION The TC4523 is a 4 stage PHEMT MMIC power amplifier. It is designed for use in low cost, high volume, Ku band


    Original     		PDF TC4523 TC4523 50ohm ku vsat amplifier GRM39C0G102J50V GRM39Y5V104Z25V C4 MMIC

    CAP 0805 ATC 600F

    Abstract: chip resistor 1206 CW-37 American Technical Ceramics GaAs FET chip GRM39Y5V104Z25V murata cw
    Text: TC2997D REV3_20050418 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs PHOTO ENLARGEMENT FEATURES • 20W Typical Power at 2.45 GHz • 10dB Typical Linear Power Gain at 2.45 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %


    Original     		PDF TC2997D TC2997D GRM39COG0R75C50V GRM39COG2RC50V GRM39COG1R2C50V GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L) 250WVDC) CAP 0805 ATC 600F chip resistor 1206 CW-37 American Technical Ceramics GaAs FET chip GRM39Y5V104Z25V murata cw

    TC2996D

    Abstract: GaAs FET chip GRM39Y5V104Z25V
    Text: TC2996D REV2_20070503 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 2.45 GHz • 11 dB Typical Linear Power Gain at 2.45 GHz PHOTO ENLARGEMENT • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %


    Original     		PDF TC2996D TC2996D GRM39COG0R7C50V GRM39COG1R5C50V 1000PF GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L) GRM39COG2R5C50V GaAs FET chip GRM39Y5V104Z25V

    420 MMIC

    Abstract: GRM39C0G102J50V GRM39Y5V104Z25V RO4003 TC3532
    Text: TC3532 REV5_20050418 4.9 - 6 GHz 29dBm Single-Bias MMIC FEATURES • P-1 dB: 29 dBm • Small Signal Gain: 21 dB • Power Added Efficiency: 25 % PHOTO ENLARGEMENT • IP3: 39 dBm • Match to 50 Ω operation • Bias condition: 400 mA @ 8 V DESCRIPTION The TC3532 is a 2-stage PHEMT MMIC power amplifier with single-bias. It requires only a single positive supply. It


    Original     		PDF TC3532 29dBm TC3532 002MAX 420 MMIC GRM39C0G102J50V GRM39Y5V104Z25V RO4003

    GRM39C0G102J50V

    Abstract: GRM39Y5V104Z25V RO4003
    Text: TC3331 REV5_20060516 3.3 - 3.7 GHz 1W MMIC FEATURES • • • • • • PHOTO ENLARGEMENT P-1 dB: 30 dBm Small Signal Gain: 30 dB Power Added Efficiency: 25 % IP3: 39 dBm Match to 50 Ω operation Bias condition: 650 mA @ 7 V GND GND RF IN Vd1 Vd2 Vg1


    Original     		PDF TC3331 TC3331 GRM39C0G102J50V GRM39Y5V104Z25V RO4003

    mmic c8

    Abstract: ku vsat amplifier GRM39C0G102J50V GRM39Y5V104Z25V TC4535 C4 MMIC
    Text: TC4535 PRE1_12/12/2004 Preliminary 13.75 - 14.5 GHz 1W MMIC FEATURES • • • • • P-1 dB: 30 dBm Small Signal Gain: 30 dB IP3: 39 dBm Match to 50 Ω Operation Bias condition:750 mA @ 8 V DESCRIPTION The TC4535 is a 4 stage PHEMT MMIC power amplifier. It is designed for use in low cost, high volume, Ku


    Original     		PDF TC4535 TC4535 50ohm mmic c8 ku vsat amplifier GRM39C0G102J50V GRM39Y5V104Z25V C4 MMIC

    GRM39C0G102J50V

    Abstract: GRM39Y5V104Z25V RO4003 mmic c8
    Text: TC3341 REV2_20050418 3.3 - 3.7 GHz 2W MMIC FEATURES • • • • • • PHOTO ENLARGEMENT P-1 dB: 32.5 dBm Small Signal Gain: 27 dB Power Added Efficiency: 30 % IP3: 42 dBm Match to 50 Ω operation Bias condition: 700 mA @ 8 V GND GND RF IN Vd1 Vd2 Vg1


    Original     		PDF TC3341 TC3341 GRM39C0G102J50V GRM39Y5V104Z25V RO4003 mmic c8

    GRM39C0G102J50V

    Abstract: GRM39Y5V104Z25V
    Text: TC3133 REV2_20031121 2.4 GHz 1W MMIC FEATURES PHOTO ENLARGEMENT • P-1 dB: 31 dBm Vg GND • Small Signal Gain: 24 dB NA RF OUT • Power Added Efficiency: 30 % RF IN RF OUT • IP3: 39 dBm GND Vd • Bias Condition: 600 mA @ 5 V DESCRIPTION The TC3133 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost and high


    Original     		PDF TC3133 TC3133 GRM39C0GR75C50V GRM39C0G020C50V GRM39C0G1R2C50V GRM39C0G102J50V GRM39Y5V104Z25V GRM39C0G102J50V GRM39Y5V104Z25V

    TC3141

    Abstract: GRM39C0G102J50V GRM39Y5V104Z25V
    Text: TC3141 REV3_20040412 2.4 GHz 2W MMIC FEATURES PHOTO ENLARGEMENT • P-1 dB: 33 dBm Vg GND RF OUT • Small Signal Gain: 29 dB RF IN • Power Added Efficiency: 31 % RF IN RF OUT • IP3: 42 dBm GND Vd • DC Bias: 800 mA @ 7 V DESCRIPTION The TC3141 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost and high volume


    Original     		PDF TC3141 TC3141 GRM39C0G3R3C50V GRM39C0G2R5C50V GRM39C0G010C50V GRM39C0GR75C50V GRM39C0G1R5C50V GRM39C0G102J50V GRM39Y5V104Z25V GRM39C0G102J50V GRM39Y5V104Z25V

    GRM39-C0G1R

    Abstract: GRM39C0G102J50V GRM39Y5V104Z25V
    Text: TC3131 REV2_20040412 2.4 GHz 1W MMIC FEATURES PHOTO ENLARGEMENT • P-1 dB: 30 dBm • Small Signal Gain: 28 dB • Power Added Efficiency: 32 % • IP3: 39 dBm • Bias Condition: 400 mA @ 7 V GND RF OUT Vg RF OUT GND Vd RF IN GND DESCRIPTION The TC3131 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost and high volume


    Original     		PDF TC3131 TC3131 GRM39-C0G1R GRM39C0G102J50V GRM39Y5V104Z25V

    RO4003

    Abstract: GRM39C0G102J50V GRM39Y5V104Z25V TC3538
    Text: TC3538 REV.3_04/18/2005 5 - 6 GHz 1W MMIC FEATURES • • • • • • P-1 dB: 30 dBm Small Signal Gain: 21 dB Power Added Efficiency: 25 % IP3: 39 dBm Matched to 50 Ω operation Bias condition: 600 mA @ 7 V PHOTO ENLARGEMENT DESCRIPTION The TC3538 is a 2-stage PHEMT MMIC power amplifier. It is designed for use in low cost, high volume, 5 - 6 GHz


    Original     		PDF TC3538 TC3538 RO4003 GRM39C0G102J50V GRM39Y5V104Z25V

    GRM39C0G102J50V

    Abstract: GRM39Y5V104Z25V RO4003 TC3531
    Text: TC3531 REV4_20060525 5.8 GHz 1W MMIC FEATURES • • • • • • P-1 dB: 30 dBm Small Signal Gain: 24 dB Power Added Efficiency: 24 % IP3: 39 dBm Match to 50 Ω Operation Bias condition: 600 mA @ 7 V PHOTO ENLARGEMENT Vg1 GND GND RF IN Vd1 Vd2 Vg2 RF OUT


    Original     		PDF TC3531 TC3531 002MAX GRM39C0G102J50V GRM39Y5V104Z25V RO4003

    ATC 600F

    Abstract: RO4003 GRM39Y5V104Z25V TC3943 10GHZ GAAS
    Text: TC3943 REV2_20070503 0.5W Single-Bias and Prematched GaAs Power PHEMTs using SMT package FEATURES PHOTO ENLARGEMENT • Prematched for 5~10 GHz • 0.5W Typical Output Power at 5~10GHz • 7dB Typical Linear Power Gain at 10GHz • High Linearity: IP3 = 37 dBm Typical at 5~10GHz


    Original     		PDF TC3943 10GHz TC3943 27dBm 10GHz. TC3943_ ATC 600F RO4003 GRM39Y5V104Z25V 10GHZ GAAS

    D1 diode

    Abstract: diode 400V 1A SOD-123 GRM39Y5V104Z25V RO4003 TC3541 cap 1210 Murata WiFi
    Text: TC3541 REV0_20060921 5.2 – 5.9 GHz 2W Single Bias MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 33 dBm ! Small Signal Gain: 20 dB ! Power Added Efficiency: 25 % ! IP3: 42 dBm ! Input/Output 50 Ω Match ! Bias condition: 1000 mA @ 9 V DESCRIPTION The TC3541 is a 2-stage PHEMT Single Bias MMIC power amplifier. It is designed for use in low cost and high


    Original     		PDF TC3541 TC3541 APPLICATITC3541 1000PF OD-123) GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L D1 diode diode 400V 1A SOD-123 GRM39Y5V104Z25V RO4003 cap 1210 Murata WiFi