Untitled
Abstract: No abstract text available
Text: Digital Linear Gauge GS-1713/1730 10µm resolution GS-1813/1830(1µm resolution) S p las ! h p ro of D u s t p ro o f ! lntroducing compact and lightweight digital linear gauges that are easily installed in current production equipment. With a dust-proof and
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GS-1713/1730
GS-1813/1830
1700-1E
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Untitled
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS R DS(on) max -20V 42.5mΩ @ V GS = -4.5V 71mΩ @ V GS = -1.8V ID T A = +25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (R DS(ON) ) and yet maintain superior switching
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DMG3415U
AEC-Q101
DS31735
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capacitor 15000 uf 50WV
Abstract: GS105
Text: GS GT FEATURES : 105 5000 Life time:105 5000 hours Wide operating temperature range UPS Suited for smoothing circuits for general purpose inverter control for F.A. machine designed for use as input filter capacitor for current SPECIFICATIONS Item Performance Characteristics
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120Hz)
120Hz
capacitor 15000 uf 50WV
GS105
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Untitled
Abstract: No abstract text available
Text: 85 °C GS DIN series PCB solder pins RoHS compliant REACH compliant Features • • • • All internal contact welded High CV product High reliability Long useful life Different case sizes, voltages and capacitance combinations are available on request.
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35x80
40x60
35x100
45x60
40x80
40x100
45x80
45x100
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FDB3632
Abstract: FDI3632 FDP3632 tc144e
Text: FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB3632
FDP3632
FDI3632
FDI3632
tc144e
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FDB3632
Abstract: No abstract text available
Text: FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB3632
FDP3632
FDI3632
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FDB3632
Abstract: FDP3632 FDI3632 tc144e
Text: FDB3632 / FDP3632 / FDI3632 N-Channel UltraFET Trench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB3632
FDP3632
FDI3632
FDI3632
tc144e
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FDP3632
Abstract: 82784 FDB3632 FDI3632
Text: FDB3632 / FDP3632 / FDI3632 N-Channel UltraFET Trench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 83nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB3632
FDP3632
FDI3632
82784
FDI3632
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s-parameter s11 s12 s21 10000
Abstract: nec 151 C10535E NE721S01 NE721S01-T1 NE721S01-T1B nec 7912 um 741 AN 17821 audio
Text: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7 dB TYP. @f = 12 GHz PACKAGE DIMENSIONS • Gate Length: Lg = 0.8 µm recessed gate (Unit: mm) • Gate Width: Wg = 330 µm
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NE721S01
NE721S01-T1
NE721S01-T1B
s-parameter s11 s12 s21 10000
nec 151
C10535E
NE721S01
NE721S01-T1
NE721S01-T1B
nec 7912
um 741
AN 17821 audio
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3CA MARKING
Abstract: V393
Text: LMV331, LMV393, LMV339 Single, Dual, Quad General Purpose, Low Voltage Comparators The LMV331 is a CMOS single channel, general purpose, low voltage comparator. The LMV393 and LMV339 are dual and quad channel versions, respectively. The LMV331/393/339 are specified
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LMV331,
LMV393,
LMV339
LMV331
LMV393
LMV331/393/339
SC-70
3CA MARKING
V393
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Untitled
Abstract: No abstract text available
Text: LMV331, NCV331, LMV393, LMV339 Single, Dual, Quad General Purpose, Low Voltage Comparators The LMV331 is a CMOS single channel, general purpose, low voltage comparator. The LMV393 and LMV339 are dual and quad channel versions, respectively. The LMV331/393/339 are specified
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LMV331,
NCV331,
LMV393,
LMV339
LMV331
LMV393
LMV339
LMV331/393/339
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MARKING V393
Abstract: 613AG va marking sot353 339 marking code transistor manual marking AE 5pin ULLGA8 Package SC70A sot353 marking AE
Text: LMV331, LMV393, LMV339 Single, Dual, Quad General Purpose, Low Voltage Comparators The LMV331 is a CMOS single channel, general purpose, low voltage comparator. The LMV393 and LMV339 are dual and quad channel versions, respectively. The LMV331/393/339 are specified
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LMV331,
LMV393,
LMV339
LMV331
LMV393
LMV331/393/339
SC-70,
MARKING V393
613AG
va marking sot353
339 marking code transistor manual
marking AE 5pin
ULLGA8 Package
SC70A
sot353 marking AE
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v393
Abstract: ULLGA8 Package va sot-353 LMV331 LMV339 LMV393 va marking sot353
Text: LMV331, LMV393, LMV339 Single, Dual, Quad General Purpose, Low Voltage Comparators The LMV331 is a CMOS single channel, general purpose, low voltage comparator. The LMV393 and LMV339 are dual and quad channel versions, respectively. The LMV331/393/339 are specified
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LMV331,
LMV393,
LMV339
LMV331
LMV393
LMV339
LMV331/393/339
SC-70,
v393
ULLGA8 Package
va sot-353
va marking sot353
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NEC 2561
Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Text: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym
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NE72218
NE72218-T1
NE72218-T2
NEC 2561
nec 2561 le
NEC 2561 LE 301
sem 2105 16 pin
saa 1074
SAA 1061
nec 2561 4 pin
cp 1099
c 945 p 331
saa 1049
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L9936
Abstract: hardware for dc to ac full bridge converter window lift motor
Text: / = T S G S -T H O M S O N ^ 7 # . [*^ §[Li gTr[EMD(gS L9936 HALF BRIDGE MOTOR DRIVER . • ■ ■ ■ ■ ■ 20A OUTPUT CU RREN T/DC OPERATION LOW SATURATION VOLTAGE VERY LOW CONSUMPTION IN OFF STATE OVERLOAD DIAGNOSTIC OUTPUT INTERNAL TEMPERATURE SENSOR
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L9936
L9936
hardware for dc to ac full bridge converter
window lift motor
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msm5299
Abstract: No abstract text available
Text: O K I semiconductor 1C MSM6355 GS LCD CONTROLLER LSI G E N E R A L DESCRIPTIO N MSM6355GS is a controller fo r large capacity dot m atrix liquid crystal displays. Since the configuration of the internal registers is based on MSM6255, it is com patible w ith MSM6255
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MSM6355
MSM6355GS
MSM6255,
MSM6255
MSM6255;
msm5299
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nec 2501 904
Abstract: AN 17821 audio nec 303 j fet nec 7912
Text: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7dBTYP. @ f = 1 2 G H z • Gate Length: Lg = 0.8 /xm recessed gate • Gate Width: Wg = 330 • fim Plastic package ORDERING INFORMATION
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NE721S01
NE721S01-T1
E721S01-T1B
nec 2501 904
AN 17821 audio
nec 303 j fet
nec 7912
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TRANSISTOR ss101
Abstract: No abstract text available
Text: BSS101 In fin e o n tschnologie» SIPMOS 0 Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V </> Type BSS101 240 V Type BSS 101 BSS 101 Ordering Code Q62702-S493 Q62702-S636 0.13 A ^DS(on) Package Marking 16 ß
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BSS101
Q62702-S493
Q62702-S636
SS101
E6288
E6325
S35bG5
Q133777
SQT-89
TRANSISTOR ss101
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transistors BC 458
Abstract: BC 458 transistors BC 458 pnp transistor BC 458 BC 459 transistors BC 459 bf 478 BC479 TO-18 BC-177 pnp transistor 2N5415
Text: rZ J SGS-THOMSON ¡M »iü i g¥[M «(gS GENERAL PURPOSE & INDUSTRIAL ^7# SMALL SIGNAL TRANSISTORS PNP TRANSISTORS FOR LOW LEVEL, LOW NOISE APPLICATIONS - TO 18 v CEO hFE mln/max ic fi% Type (mA) (V) 7> v CE(sat) max lcflB (mA) (V) «T min NF (MHz) (dB) (mW)
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BFX37
BCY79
BCY78
BFX91
transistors BC 458
BC 458
transistors BC 458 pnp
transistor BC 458
BC 459
transistors BC 459
bf 478
BC479
TO-18 BC-177 pnp transistor
2N5415
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bf758
Abstract: BF757 BF299 Thomson-CSF amplifier BF 759 BF416 BF493 HIGH VOLTAGE VIDEO AMPLIFIER BF643 BF859
Text: high voltage video amplifier transistors S> transistors haute tension vidéo-am plification ih o m s o n -c s f Type N PN M axim u m ratin gs PNP Ptot Ptot / T C haracteristics at Tam |, = 25°C v C EO •»21E! / Vc e / 1C Tam b = 25 °C min m in-m ax (W
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nec gaas fet marking
Abstract: No abstract text available
Text: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7 dB TYP. @ f = 1 2 G H z • Gate Length: Lg = 0.8 ¿¡m recessed gate • Gate Width: Wg = 330 ¿¡m • Plastic package PACKAGE DIMENSIONS
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NE721S01
NE721S01-T1
NE721S01-T1B
C10535E)
IR30-00
nec gaas fet marking
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RS1026
Abstract: RS1064C SRS 4451 siemens datenbuch "WF Berlin" srs 360 RS1002A yl 1050 tetrode siemens rs 1007 RS1046 RS1072C
Text: S IE M E N S Datenbuch 1980/81 gsgekühlt • for t • wassergekü ühlt * verdamp ühlt • siedekor nsgekühlt *stra i r e r i ü h " • K i • ssergeku ühlt * verdamp ühlt * sied ikon nsgekühlt *stra gs skühlt • for t * wassergekü :ühlt • verde p
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Untitled
Abstract: No abstract text available
Text: II 12 IS 9 T 8 6 I 5566 3 | PART NO. NOTES 2 ASS'Y. ENG. NO. TYPE HOUSING MAT'L. SEE N O T E 1) PLATING (SEE N O T E 3) I) H O U S I N G MATERIAL^ 39-30- 1039 "BLANK" - N Y L O N 39-30-2033 39-30-2031 • -03A3GS2 -03A3GS A A GS2 GS 39-30-503T 39-30-2035
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-03A3GS2
-03A3GS
39-30-503T
-03A3S
-03B3
-03B3GS2
-03B3GS
-03B3S
-03A3GS2-2IO
-03B3
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U1058
Abstract: U70799
Text: 13 II 12 1 PART NUMBER ENGINEERING NUMBER MOUNT OPTION PLATING M AT'L. 3 9-3 1- 1032 5 5 6 9 -0 3 A 4 -B L 4 BLANK BL 3 9-30 -303 1 5 5 6 9 -03 A 3 3 BLANK BLANK 3 9 -3 0 -4 0 3 9 5569-03A3G S2 3 GS2 3 9 -3 0 -4 0 3 7 5569-03A3G S 3 GS 3 9 -3 0 -4 0 3 5 5569-03A3G 2
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5569-03A4-BL
5569-03A3
5569-03A3GS2
5569-03A3GS
5569-03A3G2
5569-03A3G
5569-03A4
5569-03A4GS2
5569-03A4GS
5569-03A4G2
U1058
U70799
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