s13002
Abstract: transistor 8522
Text: MOTOROLA O rder this docum ent by M G S13002D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet GS13002D Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his IG BT con tain s a b u ilt-in free w h ee lin g diod e and a gate
|
OCR Scan
|
S13002D/D
s13002
transistor 8522
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet GS13002D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T h is IG B T contains a built-in free w heeling diode and a gate protection zen er diodes. F ast sw itching characteristics result in
|
OCR Scan
|
MGS13002D
GS13002D
0E-05
0E-04
0E-03
0E-02
OE-01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by GS13002D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet GS13002D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This IGBT contains a b uilt-in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in
|
OCR Scan
|
MGS13002D/D
MGS13002D
|
PDF
|