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    GSM REPEATER POWER AMPLIFIER MODULE Search Results

    GSM REPEATER POWER AMPLIFIER MODULE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation

    GSM REPEATER POWER AMPLIFIER MODULE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RFHIC

    Abstract: No abstract text available
    Text: Power Amplifier RFW0902-10 Product Features Application • Small size by using simple matching circuit board • Single Supply Voltage • Heat sink 99.9% copper, gold plated • High Productivity • Low Manufacturing Cost • GaAs HFET • GSM Repeater


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    PDF RFW0902-10 DP-56 300MHz RFHIC

    GSM repeater ic

    Abstract: rfw0947
    Text: Power Amplifier RFW0947-10 Product Features Application • Small size by using simple matching circuit board • Single Supply Voltage • Heat sink 99.9% copper, gold plated • High Productivity • Low Manufacturing Cost • GaAs HFET • GSM Repeater


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    PDF RFW0947-10 DP-56 300MHz GSM repeater ic rfw0947

    DP-36

    Abstract: gsm repeater
    Text: Power Amplifier RFA0902-04 / RFA0947-04 Product Features Application • Small size by using simple matching circuit board • Single Supply Voltage • Heat sink 99.9% copper, gold plated • High Productivity • Low Manufacturing Cost • GaAs HFET • GSM Repeater


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    PDF RFA0902-04 RFA0947-04 DP-36 300MHz DP-36 gsm repeater

    Untitled

    Abstract: No abstract text available
    Text: Power Amplifier RFA0902-04 / RFA0947-04 Product Features Application • Small size by using simple matching circuit board • Single Supply Voltage • Heat sink 99.9% copper, gold plated • High Productivity • Low Manufacturing Cost • GaAs HFET • GSM Repeater


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    PDF RFA0902-04 RFA0947-04 DP-36 300MHz DP-36)

    dual gsm repeater

    Abstract: GSM repeater circuit GSM band selective repeater Leaky Feeder gsm repeater HPFO multi-band radio frequency
    Text: System Specifications Sheet SUCOceed HPFOR REPEATER TUNNEL COVERAGE SYSTEMS FOR MULTI BAND APPLICATIONS System Features Typical System Layout Its high output power, multiple carrier capability, modular design, and multi-band support make the High Power


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    GSM repeater circuit

    Abstract: repeater gsm circuit GSM repeater power amplifier module dual gsm repeater repeater gsm gsm repeater LMV242
    Text: April 2004 LMV242 Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller General Description Features The LMV242 is a power amplifier PA controller intended for use within an RF transmit power control loop in GSM/GPRS mobile phones. The LMV242 supports all single-supply PA’s


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    PDF LMV242 LMV242 GSM repeater circuit repeater gsm circuit GSM repeater power amplifier module dual gsm repeater repeater gsm gsm repeater

    Untitled

    Abstract: No abstract text available
    Text: LCL0402/ LCL0902/ LCL1502 LCL1802/ LCL1902/ LCL2102 LCL2302/ LCL2702 MCM LNA1 Product Features Application • Multichip Hybrid Module • Repeater • Base Station • RF Sub-Systems • RFID • GaAs p-HEMT & MESFET chip on board • No matching circuit needed


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    PDF LCL0402/ LCL0902/ LCL1502 LCL1802/ LCL1902/ LCL2102 LCL2302/ LCL2702 25dBm) CP-16

    dual gsm repeater

    Abstract: HMCAD1512
    Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK A Selection of Hittite Components for Cellular Infrastructure Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation


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    PDF HMC920LP5E HMC374SC70E HMC617LP3E HMC618LP3E HMC636ST89E HMC616LP3E dual gsm repeater HMCAD1512

    Untitled

    Abstract: No abstract text available
    Text: LCL0912/ LCL1512/ LCL1812 LCL2112/ LCL2312/ LCL2712 LCL3212/ LCL3512/ LCL3712 MCM Linear LNA Product Features Application • Multichip Hybrid Module • Repeater • Base Station • RF Sub-Systems • RFID • GaAs p-HEMT & MESFET chip on board • No matching circuit needed


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    PDF LCL0912/ LCL1512/ LCL1812 LCL2112/ LCL2312/ LCL2712 LCL3212/ LCL3512/ LCL3712 20dBm)

    LDMOS 10w 1805-1880 MHz

    Abstract: XD010-22S-D2F GSM repeater power amplifier module
    Text: Preliminary Product Description XD010-22S-D2F The XD010-22S-D2F 10W power module is a 2stage Class A/AB amplifier module for use in the driver stages of GSM/EDGE RF power amplifiers. The power transistors are fabricated using Sirenza’s latest, high performance LDMOS process. The unit


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    PDF XD010-22S-D2F XD010-22S-D2F 30mils EDS-102930 LDMOS 10w 1805-1880 MHz GSM repeater power amplifier module

    GSM repeater circuit

    Abstract: XD010-14S-D4F
    Text: Preliminary Product Description The XD010-14S-D4F 10W power module is a 2-stage Class A/AB amplifier module for use in the driver stages of GSM and EDGE RF power amplifiers. The matching structures are designed to minimize the EVM at typical operating levels. This unit operates from a single


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    PDF XD010-14S-D4F XD010-14S-D4F 30mils EDS-102936 GSM repeater circuit

    Untitled

    Abstract: No abstract text available
    Text: Product Description XD010-14S-D4F The XD010-14S-D4F 10W power module is a 2-stage Class A/AB amplifier module for use in the driver stages of GSM and EDGE RF power amplifiers for cellular base stations. The matching structures are designed to minimize the EVM at typical operating levels. This unit


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    PDF XD010-14S-D4F XD010-14S-D4F 1000pF, EDS-102930

    GSM 3g repeater circuit

    Abstract: GSM repeater circuit gsm repeater
    Text: MCM LNA LCL0912-L / LCL1512-L LCL1812-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & MESFET chip on board • No matching circuit needed • High IP3 & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging


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    PDF LCL0912-L LCL1512-L LCL1812-L CP-16B GSM 3g repeater circuit GSM repeater circuit gsm repeater

    GSM 3g repeater circuit

    Abstract: LCL1502 LCL1502-L repeater GSM LNA GSM repeater circuit gsm repeater LCL0402-L gsm wcdma repeater
    Text: MCM LNA LCL0402-L / LCL0902-L LCL1502-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & MESFET chip on board • No matching circuit needed • High IP3 & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging


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    PDF LCL0402-L LCL0902-L LCL1502-L CP-16B GSM 3g repeater circuit LCL1502 LCL1502-L repeater GSM LNA GSM repeater circuit gsm repeater gsm wcdma repeater

    GSM repeater circuit

    Abstract: LCL1502
    Text: LCL0402/ LCL0902/ LCL1502 LCL1802/ LCL1902/ LCL2102 LCL2302/ LCL2702 MCM LNA1 Product Features Application • Multichip Hybrid Module • Repeater • Base Station • RF Sub-Systems • RFID • GaAs p-HEMT & MESFET chip on board • No matching circuit needed


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    PDF LCL0402/ LCL0902/ LCL1502 LCL1802/ LCL1902/ LCL2102 LCL2302/ LCL2702 25dBm) CP-16B GSM repeater circuit LCL1502

    Untitled

    Abstract: No abstract text available
    Text: LCL0402/ LCL0902/ LCL1502 LCL1802/ LCL1902/ LCL2102 LCL2302/ LCL2702 MCM LNA1 Product Features Application • Multichip Hybrid Module • Repeater • Base Station • RF Sub-Systems • RFID • GaAs p-HEMT & MESFET chip on board • No matching circuit needed


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    PDF LCL0402/ LCL0902/ LCL1502 LCL1802/ LCL1902/ LCL2102 LCL2302/ LCL2702 25dBm) CP-16

    BLO1RN1A

    Abstract: dual gsm repeater DCS1800 PF08107BP
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    GSM repeater circuit

    Abstract: No abstract text available
    Text: LCL0912/ LCL1512/ LCL1812 LCL2112/ LCL2312/ LCL2712 LCL3212/ LCL3512/ LCL3712 MCM Linear LNA Product Features Application • Multichip Hybrid Module • Repeater • Base Station • RF Sub-Systems • RFID • GaAs p-HEMT & MESFET chip on board • No matching circuit needed


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    PDF LCL0912/ LCL1512/ LCL1812 LCL2112/ LCL2312/ LCL2712 LCL3212/ LCL3512/ LCL3712 20dBm) GSM repeater circuit

    Untitled

    Abstract: No abstract text available
    Text: LCL0912/ LCL1512/ LCL1812 LCL2112/ LCL2312/ LCL2712 LCL3212/ LCL3512/ LCL3712 MCM Linear LNA Product Features Application • Multichip Hybrid Module • Repeater • Base Station • RF Sub-Systems • RFID • GaAs p-HEMT & MESFET chip on board • No matching circuit needed


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    PDF LCL0912/ LCL1512/ LCL1812 LCL2112/ LCL2312/ LCL2712 LCL3212/ LCL3512/ LCL3712 20dBm)

    GSM repeater circuit

    Abstract: AN060 XD010-14S-D4F repeater gsm
    Text: XD010-14S-D4F Y XD010-14SD4F(Y) 925 MHz to 960 MHz Class A/AB 15 W Power Amplifier Module 925 MHz to 960 MHz CLASS A/AB 15 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: D Product Description Features


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    PDF XD010-14S-D4F XD010-14SD4F EDS-102936 GSM repeater circuit AN060 repeater gsm

    PF08103B

    Abstract: GSM repeater circuit GSM 900 mhz repeater circuit DCS1800 E-GSM900 GSM900 PF08103B equivalent
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF

    GSM repeater circuit

    Abstract: GSM repeater power amplifier module DP-36 IMT-2000 gsm repeater GSM repeater ic
    Text: Power Amplifier RFM0947-10 Product Features Application • Small size by using simple matching circuit board • High Efficiency • Single Supply Voltage • High Linearity, 10W Power • Heat sink 99.9% copper, gold plate • High Productivity • Low Manufacturing Cost


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    PDF RFM0947-10 DP-36 IMT-2000, GSM repeater circuit GSM repeater power amplifier module DP-36 IMT-2000 gsm repeater GSM repeater ic

    925-960 power amplifier

    Abstract: No abstract text available
    Text: Product Description XD010-14S-D4F The XD010-14S-D4F 10W power module is a 2-stage Class A/AB amplifier module for use in the driver stages of GSM and EDGE RF power amplifiers for cellular base stations. The matching structures are designed to minimize the EVM at typical operating levels. This unit


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    PDF XD010-14S-D4F XD010-14S-D4F XD010-EVAL) EDS-102936 925-960 power amplifier

    XD010-22S-D2FY

    Abstract: 10MF 35V GSM repeater circuit XD010-22S-D2F GaN amplifier temperature compensation GSM module BLOCK diagram AN060 GAN temperature compensation repeater gsm
    Text: XD010-22S-D2F Y XD010-22SD2F(Y) 1805 Mhz to 1880 MHz Class A/AB 12 W power Amplifier Module 1805 MHz to 1880 MHz CLASS A/AB 12 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: D Product Description


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    PDF XD010-22S-D2F XD010-22SD2F EDS-102930 XD010-22S-D2FY 10MF 35V GSM repeater circuit GaN amplifier temperature compensation GSM module BLOCK diagram AN060 GAN temperature compensation repeater gsm