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    Abstract: No abstract text available
    Text: TO SHIBA GT20J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20JB11 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 1.5 The 3rd Generation Enhancement-Mode High Speed : tf=0.30//s Max. Low Saturation Voltage : V qe (sat) = 2-7V (Max.)


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    PDF GT20J311 GT20JB11 30//s